Inventor · disambiguated record
Jongseob Kim
Also filed as: KIM JONGSEOB
26 granted patents·38 pending applications·21 citations·filing 2007–2025
92Inventor score
Top patents by PatentIndex Score
64 records- 0196US11581269B2Semiconductor thin film structures and electronic devices including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 14, 2023·10 cites·26 claims
- 0294US11757029B2High electron mobility transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Sep 12, 2023·2 cites·12 claims
- 0391US12218233B2High electron mobility transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Feb 4, 2025·1 cites·20 claims
- 0490US12288738B2Semiconductor device package and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Apr 29, 2025·2 cites·27 claims
- 0588US12199174B2High electron mobility transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 14, 2025·1 cites·20 claims
- 0688US12002879B2High electron mobility transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jun 4, 2024·2 cites·24 claims
- 0782US12507430B2Power device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Dec 23, 2025·0 cites·18 claims
- 0880US11069802B2Field effect transistor including gradually varying composition channelSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 20, 2021·2 cites·37 claims
- 0979US11387358B2Semiconductor structure, transistor including the same, and method of manufacturing transistorSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jul 12, 2022·1 cites·28 claims
- 1079US2025056827A1High electron mobility transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1175US2025098201A1High electron mobility transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1275US2025089326A1Power semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1374US12489038B2Semiconductor device packageSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 2, 2025·0 cites·13 claims
- 1472US12464793B2Nitride semiconductor buffer structure and semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Nov 4, 2025·0 cites·20 claims
- 1570US12040391B2Power device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 16, 2024·0 cites·13 claims
- 1670US2025212446A1High electron mobility transistorSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1769US12218206B2Power semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Feb 4, 2025·0 cites·20 claims
- 1866US11888059B2Field effect transistor including gradually varying composition channelSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 30, 2024·0 cites·36 claims
- 1963US12278281B2High electron mobility transistorSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Apr 15, 2025·0 cites·20 claims
- 2063US11335802B2High electron mobility transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 17, 2022·0 cites·25 claims
- 2162US2025194214A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2262US2025203911A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2362US2025227980A1Semiconductor device and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2462US2021305418A1High electron mobility transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Application pending·0 cites
- 2561US2025221008A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2661US2025210549A1Semiconductor device and method for manufacturing the sameSUMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2761US2025169123A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2861US2025212445A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2960US2025194177A1Semiconductor device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3060US2025176247A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3159US12426294B2High electron mobility transistorSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Sep 23, 2025·0 cites·20 claims
- 3259US2025338545A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3359US2025169098A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3459US2025374581A1Manufacturing method of power semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3559US2022148947A1Semiconductor device packageSAMSUNG ELECTRONICS CO LTD·Filed 2021·Application pending·0 cites
- 3659US2025203914A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3758US12119397B2Semiconductor IC device including passivation layer for inactivating a dopant in a p-type semiconductor layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 15, 2024·0 cites·13 claims
- 3858US12113110B2Nitride semiconductor device with field effect gateSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 8, 2024·0 cites·20 claims
- 3958US2025226311A1Power semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4058US2025261419A1Power semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4158US2025203954A1Power semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4258US2025259928A1Power semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4358US2025169096A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4458US2025350229A1Power inverter, motor control device including the same and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4557US2025287640A1Power semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4657US2025234630A1Power semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4756US2024213327A1Superlattice buffer structure and semiconductor device having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 4856US2024258398A1High electron mobility transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 4956US2024204092A1Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 5056US2025212485A1Power semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →