Inventor · disambiguated record

Johannes Georg Laven

Also filed as: LAVEN JOHANNES · LAVEN JOHANNES GEORG

135 granted patents·5 pending applications·201 citations·filing 2012–2024

99Inventor score

Technology areasH10P H10D H01L H10W H03K

Files withINFINEON TECHNOLOGIES AG130 INFINEON TECHNOLOGIES AUSTRIA AG7 INFINEON TECH DRESDEN GMBH & CO KG2 SCHULZE HANS-JOACHIM1

Top patents by PatentIndex Score

140 records

0195US9917186B2Semiconductor device with control structure including buried portions and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2016·Granted Mar 13, 2018·9 cites·14 claims
0294US9024413B2Semiconductor device with IGBT cell and desaturation channel structureINFINEON TECHNOLOGIES AG·Filed 2013·Granted May 5, 2015·10 cites·8 claims
0393US9613805B1Method for forming a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2015·Granted Apr 4, 2017·9 cites·22 claims
0493US9105679B2Semiconductor device and insulated gate bipolar transistor with barrier regionsINFINEON TECHNOLOGIES AG·Filed 2013·Granted Aug 11, 2015·17 cites·20 claims
0590US10854739B2Method for producing IGBT with dV/dt controllabilityINFINEON TECHNOLOGIES AG·Filed 2020·Granted Dec 1, 2020·2 cites·22 claims
0690US9054035B2Increasing the doping efficiency during proton irradiationINFINEON TECHNOLOGIES AG·Filed 2013·Granted Jun 9, 2015·8 cites·7 claims
0789US10615272B2Method for producing IGBT with dV/dt controllabilityINFINEON TECHNOLOGIES AG·Filed 2018·Granted Apr 7, 2020·4 cites·15 claims
0889US9621133B2Method of operating a semiconductor device having an IGBT and desaturation channel structureINFINEON TECHNOLOGIES AG·Filed 2015·Granted Apr 11, 2017·4 cites·5 claims
0988US10153275B2Method of operating an IGBT having switchable and non-switchable diode cellsINFINEON TECHNOLOGIES AG·Filed 2018·Granted Dec 11, 2018·4 cites·20 claims
1088US9876100B2Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zonesINFINEON TECHNOLOGIES AG·Filed 2015·Granted Jan 23, 2018·4 cites·20 claims
1188US9076838B2Insulated gate bipolar transistor with mesa sections between cell trench structures and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2013·Granted Jul 7, 2015·7 cites·15 claims
1287US9564495B2Semiconductor device with a semiconductor body containing hydrogen-related donorsINFINEON TECHNOLOGIES AG·Filed 2016·Granted Feb 7, 2017·4 cites·7 claims
1387US9105487B2Super junction semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2014·Granted Aug 11, 2015·6 cites·18 claims
1486US10978560B2Power semiconductor device with dV/dt controllability and low gate chargeINFINEON TECHNOLOGIES AG·Filed 2019·Granted Apr 13, 2021·3 cites·17 claims
1586US10475909B2Electric assembly including a bipolar switching device and a wide bandgap transistorINFINEON TECHNOLOGIES AG·Filed 2017·Granted Nov 12, 2019·5 cites·22 claims
1686US9997602B2Semiconductor device with transistor cells and enhancement cells with delayed control signalsINFINEON TECHNOLOGIES AG·Filed 2015·Granted Jun 12, 2018·4 cites·22 claims
1786US8710620B2Method of manufacturing semiconductor devices using ion implantationSCHULZE HANS-JOACHIM·Filed 2012·Granted Apr 29, 2014·6 cites·15 claims
1885US10109489B2Method for producing a superjunction deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Oct 23, 2018·3 cites·26 claims
1985US9385228B2Semiconductor device with cell trench structures and contacts and method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2013·Granted Jul 5, 2016·5 cites·10 claims
2084US10461739B2Transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Oct 29, 2019·4 cites·20 claims
2184US9666663B2Semiconductor device with cell trench structures and contacts and method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2013·Granted May 30, 2017·5 cites·7 claims
2284US9166027B2IGBT with reduced feedback capacitanceINFINEON TECHNOLOGIES AG·Filed 2013·Granted Oct 20, 2015·6 cites·27 claims
2383US11133380B2Diode structure of a power semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2019·Granted Sep 28, 2021·2 cites·13 claims
2482US12034066B2Power semiconductor device having a barrier regionINFINEON TECHNOLOGIES AG·Filed 2023·Granted Jul 9, 2024·0 cites·20 claims
2582US11581428B2IGBT with dV/dt controllabilityINFINEON TECHNOLOGIES AG·Filed 2020·Granted Feb 14, 2023·1 cites·19 claims
2682US10886909B2Electric assembly including an insulated gate bipolar transistor device and a wide-bandgap transistor deviceINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jan 5, 2021·3 cites·28 claims
2782US9515243B2Temperature sensorINFINEON TECHNOLOGIES AG·Filed 2014·Granted Dec 6, 2016·4 cites·31 claims
2882US9496351B2Semiconductor chip arrangementINFINEON TECHNOLOGIES AG·Filed 2016·Granted Nov 15, 2016·2 cites·17 claims
2982US2025081563A1Power Semiconductor Device with dV/dt Controllability and Low Gate ChargeINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
3081US11171230B2Semiconductor device and method for manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Nov 9, 2021·2 cites·11 claims
3181US9093568B1Semiconductor diodeINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jul 28, 2015·5 cites·22 claims
3280US10304952B2Power semiconductor device with dV/dt controllability and cross-trench arrangementINFINEON TECHNOLOGIES AG·Filed 2018·Granted May 28, 2019·2 cites·31 claims
3380US10200028B2Electric assembly including a reverse conducting switching device and a rectifying deviceINFINEON TECHNOLOGIES AG·Filed 2017·Granted Feb 5, 2019·3 cites·20 claims
3479US9972704B2Method for forming a semiconductor device and a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2015·Granted May 15, 2018·2 cites·16 claims
3579US9576944B2Semiconductor devices with transistor cells and thermoresistive elementINFINEON TECHNOLOGIES AG·Filed 2015·Granted Feb 21, 2017·4 cites·25 claims
3679US9536999B2Semiconductor device with control structure including buried portions and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jan 3, 2017·3 cites·14 claims
3778US10128328B2Method of manufacturing semiconductor devices and semiconductor device containing hydrogen-related donorsINFINEON TECHNOLOGIES AG·Filed 2017·Granted Nov 13, 2018·2 cites·23 claims
3878US9825131B2Method of manufacturing semiconductor devices and semiconductor device containing oxygen-related thermal donorsINFINEON TECHNOLOGIES AG·Filed 2016·Granted Nov 21, 2017·2 cites·17 claims
3977US12199146B2Power semiconductor device with dV/dt controllability and low gate chargeINFINEON TECHNOLOGIES AG·Filed 2023·Granted Jan 14, 2025·0 cites·17 claims
4076US10333387B2Electric assembly including a semiconductor switching device and a clamping diodeINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jun 25, 2019·2 cites·26 claims
4176US9691887B2Semiconductor device with variable resistive elementINFINEON TECHNOLOGIES AG·Filed 2015·Granted Jun 27, 2017·2 cites·20 claims
4275US10651165B2Semiconductor device having overload current carrying capabilityINFINEON TECHNOLOGIES AG·Filed 2015·Granted May 12, 2020·2 cites·11 claims
4375US10381467B2Semiconductor device with separation regionsINFINEON TECHNOLOGIES AG·Filed 2017·Granted Aug 13, 2019·1 cites·12 claims
4475US10096677B2Methods for forming a semiconductor device and a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2016·Granted Oct 9, 2018·2 cites·19 claims
4574US11121242B2Method of operating a semiconductor device having a desaturation channel structureINFINEON TECHNOLOGIES AG·Filed 2020·Granted Sep 14, 2021·0 cites·20 claims
4674US10679855B2Method for producing a superjunction deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Jun 9, 2020·1 cites·17 claims
4774US10529838B2Semiconductor device having a variable carbon concentrationINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jan 7, 2020·1 cites·20 claims
4874US10366895B2Methods for forming a semiconductor device using tilted reactive ion beamINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jul 30, 2019·1 cites·9 claims
4974US10192955B2Semiconductor device containing oxygen-related thermal donorsINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jan 29, 2019·1 cites·17 claims
5074US9935126B2Method of forming a semiconductor substrate with buried cavities and dielectric support structuresINFINEON TECHNOLOGIES AG·Filed 2014·Granted Apr 3, 2018·2 cites·15 claims

Showing the top 50 of 140 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →