Inventor · disambiguated record
Jong Seuk Lee
Also filed as: LEE JONG S · LEE JONG SEUK
17 granted patents·1 pending application·706 citations·filing 1990–2020
95Inventor score
Files withHYUNDAI ELECTRONICS IND8NEXFLASH TECHNOLOGIES INC3HYUNDAI ELECTRONICS AMERICA2WINBOND ELECTRONICS CORP2YANGTZE MEMORY TECH CO LTD2
Top patents by PatentIndex Score
18 records- 0197US7558900B2Serial flash semiconductor memoryWINBOND ELECTRONICS CORP·Filed 2005·Granted Jul 7, 2009·79 cites·29 claims
- 0294US5956268ANonvolatile memory structureHYUNDAI ELECTRONICS AMERICA·Filed 1998·Granted Sep 21, 1999·110 cites·44 claims
- 0393US10679721B2Structure and method for testing three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Jun 9, 2020·9 cites·15 claims
- 0493US6873004B1Virtual ground single transistor memory cell, memory array incorporating same, and method of operation thereofNEXFLASH TECHNOLOGIES INC·Filed 2003·Granted Mar 29, 2005·97 cites·14 claims
- 0593US6826080B2Virtual ground nonvolatile semiconductor memory array architecture and integrated circuit structure thereforNEXFLASH TECHNOLOGIES INC·Filed 2002·Granted Nov 30, 2004·94 cites·19 claims
- 0688US10998079B2Structure and method for testing three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted May 4, 2021·2 cites·17 claims
- 0787US6208198B1Drain voltage pumping circuitHYUNDAI ELECTRONICS IND·Filed 1999·Granted Mar 27, 2001·83 cites·9 claims
- 0884US5057711ANoise reducing output buffer circuit for an integrated circuitHYUNDAI ELECTRONICS IND·Filed 1990·Granted Oct 15, 1991·45 cites·4 claims
- 0982US5920884ANonvolatile memory interface protocol which selects a memory device, transmits an address, deselects the device, subsequently reselects the device and accesses dataHYUNDAI ELECTRONICS AMERICA·Filed 1997·Granted Jul 6, 1999·86 cites·36 claims
- 1069US6279070B1Multistep pulse generation circuit and method of erasing a flash memory cell using the sameHYUNDAI ELECTRONICS IND·Filed 1999·Granted Aug 21, 2001·33 cites·12 claims
- 1157US6266280B1Method of programming nonvolatile semiconductor device at low powerHYUNDAI ELECTRONICS IND·Filed 1999·Granted Jul 24, 2001·17 cites·3 claims
- 1257US6052305AErasing circuit for a flash memory device having a triple well structureHYUNDAI ELECTRONICS IND·Filed 1998·Granted Apr 18, 2000·19 cites·20 claims
- 1350US5894438AMethod for programming and erasing a memory cell of a flash memory deviceHYUNDAI ELECTRONICS IND·Filed 1998·Granted Apr 13, 1999·13 cites·10 claims
- 1445US6084798ANon-volatile memory structureFiled 1999·Granted Jul 4, 2000·8 cites·47 claims
- 1542US2010049948A1Serial flash semiconductor memoryWINBOND ELECTRONICS CORP·Filed 2009·Application pending·0 cites
- 1639US6728140B2Threshold voltage convergenceNEXFLASH TECHNOLOGIES INC·Filed 2001·Granted Apr 27, 2004·2 cites·51 claims
- 1738US5946233AFlash memory device having word line latch for multi-bit programmingHYUNDAI ELECTRONICS IND·Filed 1998·Granted Aug 31, 1999·6 cites·5 claims
- 1831US5689464AColumn repair circuit for integrated circuitsHYUNDAI ELECTRONICS IND·Filed 1994·Granted Nov 18, 1997·3 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →