Inventor · disambiguated record
John Logan
Also filed as: LOGAN JOHN · LOGAN JOHN A · LOGAN JOHN ANDREW
7 granted patents·4 pending applications·6 citations·filing 2006–2025
74Inventor score
Top patents by PatentIndex Score
11 records- 0185US11362190B2Depletion mode high electron mobility field effect transistor (HEMT) semiconductor device having beryllium doped Schottky contact layersRAYTHEON CO·Filed 2020·Granted Jun 14, 2022·2 cites·10 claims
- 0285US11101378B2Semiconductor structure having both enhancement mode group III-N high electron mobility transistors and depletion mode group III-N high electron mobility transistorsRAYTHEON CO·Filed 2019·Granted Aug 24, 2021·4 cites·14 claims
- 0375US2025330146A1N-polar rare-earth iii-nitride bulk acoustic wave resonatorRAYTHEON CO·Filed 2025·Application pending·0 cites
- 0473US2025211187A1Epitaxial growth of aluminum on aluminum-nitride compoundsRAYTHEON CO·Filed 2025·Application pending·0 cites
- 0565US11594627B2Semiconductor structure having both enhancement mode group III-N high electron mobility transistors and depletion mode group III-N high electron mobility transistorsRAYTHEON CO·Filed 2021·Granted Feb 28, 2023·0 cites·6 claims
- 0664US12301195B2Epitaxial growth of aluminum on aluminum-nitride compoundsRAYTHEON CO·Filed 2021·Granted May 13, 2025·0 cites·12 claims
- 0761US12362724B2N-polar rare-earth III-nitride bulk acoustic wave resonatorRAYTHEON CO·Filed 2021·Granted Jul 15, 2025·0 cites·9 claims
- 0854US11942919B2Strain compensated rare earth group III-nitride heterostructuresRAYTHEON CO·Filed 2021·Granted Mar 26, 2024·0 cites·20 claims
- 0949US11545566B2Gallium nitride high electron mobility transistors (HEMTs) having reduced current collapse and power added efficiency enhancementRAYTHEON CO·Filed 2019·Granted Jan 3, 2023·0 cites·10 claims
- 1047US2008057403A1Lithium cellISSAEV NIKOLAI N·Filed 2006·Application pending·0 cites
- 1142US2024162341A1Double continuous graded back barrier group iii-nitride high electron mobility heterostructureRAYTHEON CO·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →