Inventor · disambiguated record
Jong Sun Maeng
Also filed as: MAENG JONG SUN
7 granted patents·4 pending applications·12 citations·filing 2004–2024
75Inventor score
Top patents by PatentIndex Score
11 records- 0192US8895356B2Chemical vapor deposition apparatus and method of forming semiconductor epitaxial thin film using the sameMAENG JONG SUN·Filed 2011·Granted Nov 25, 2014·9 cites·19 claims
- 0279US9171994B2Chemical vapor deposition apparatus and method of forming semiconductor epitaxial thin film using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Oct 27, 2015·1 cites·11 claims
- 0368US8822338B2CVD apparatus and method of forming semiconductor superlattice structure using the sameMAENG JONG SUN·Filed 2011·Granted Sep 2, 2014·2 cites·14 claims
- 0460US2025275163A1Manufacturing method of high power semiconductor deviceSK KEYFOUNDRY INC·Filed 2024·Application pending·0 cites
- 0549US2012167824A1Cvd apparatusMAENG JONG SUN·Filed 2011·Application pending·0 cites
- 0646US8884269B2Nitride-based semiconductor light emitting deviceMAENG JONG SUN·Filed 2012·Granted Nov 11, 2014·0 cites·20 claims
- 0741US6987070B2Method for forming low-k dielectric layer of semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Jan 17, 2006·0 cites·7 claims
- 0840US9525106B2Semiconductor light emitting deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Dec 20, 2016·0 cites·20 claims
- 0940US2013014694A1Method of growing semiconductor epitaxial thin film and method of fabricating semiconductor light emitting device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2012·Application pending·0 cites
- 1036US8859314B2Method of manufacturing semiconductor light emitting deviceMAENG JONG SUN·Filed 2012·Granted Oct 14, 2014·0 cites·14 claims
- 1135US2018337307A1Nitride semiconductor light emitting device including buffer layer and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →