Inventor · disambiguated record
Joe W. Mcpherson
Also filed as: MCPHERSON JOE · MCPHERSON JOE W · MCPHERSON JOE WAYNE
21 granted patents·3 pending applications·214 citations·filing 1981–2023
94Inventor score
Top patents by PatentIndex Score
24 records- 0185US7888776B2Capacitor-based method for determining and characterizing scribe seal integrity and integrity lossTEXAS INSTRUMENTS INC·Filed 2008·Granted Feb 15, 2011·12 cites·19 claims
- 0278US6967499B1Dual ramp rate dielectric breakdown testing methodologyTEXAS INSTRUMENTS INC·Filed 2004·Granted Nov 22, 2005·26 cites·20 claims
- 0377US12159909B2Power semiconductor device with reduced strainWOLFSPEED INC·Filed 2023·Granted Dec 3, 2024·0 cites·18 claims
- 0476US4650922AThermally matched mounting substrateTEXAS INSTRUMENTS INC·Filed 1985·Granted Mar 17, 1987·46 cites·20 claims
- 0573US7612454B2Semiconductor device with improved contact fuseTEXAS INSTRUMENTS INC·Filed 2008·Granted Nov 3, 2009·5 cites·20 claims
- 0672US7628021B2Solid state heat pumpTEXAS INSTRUMENTS INC·Filed 2006·Granted Dec 8, 2009·6 cites·20 claims
- 0771US12278284B2Power semiconductor devices including a trenched gate and methods of forming such devicesWOLFSPEED INC·Filed 2023·Granted Apr 15, 2025·0 cites·26 claims
- 0869US7402514B2Line-to-line reliability enhancement using a dielectric liner for a low dielectric constant interlevel and intralevel (or intermetal and intrametal) dielectric layerTEXAS INSTRUMENTS INC·Filed 2003·Granted Jul 22, 2008·17 cites·14 claims
- 0968US6737351B2Versatile system for diffusion limiting void formationTEXAS INSTRUMENTS INC·Filed 2002·Granted May 18, 2004·13 cites·21 claims
- 1067US11869948B2Power semiconductor device with reduced strainWOLFSPEED INC·Filed 2021·Granted Jan 9, 2024·0 cites·31 claims
- 1165US7413980B2Semiconductor device with improved contact fuseTEXAS INSTRUMENTS INC·Filed 2006·Granted Aug 19, 2008·3 cites·8 claims
- 1265US7033924B2Versatile system for diffusion limiting void formationTEXAS INSTRUMENTS INC·Filed 2003·Granted Apr 25, 2006·11 cites·21 claims
- 1362US6091114AMethod and apparatus for protecting gate oxide from process-induced charging effectsTEXAS INSTRUMENTS INC·Filed 1998·Granted Jul 18, 2000·22 cites·10 claims
- 1462US4700215APolycide electrodes for integrated circuitsTEXAS INSTRUMENTS INC·Filed 1981·Granted Oct 13, 1987·23 cites·6 claims
- 1561US11640990B2Power semiconductor devices including a trenched gate and methods of forming such devicesWOLFSPEED INC·Filed 2020·Granted May 2, 2023·0 cites·24 claims
- 1658US4816425APolycide process for integrated circuitsTEXAS INSTRUMENTS INC·Filed 1987·Granted Mar 28, 1989·22 cites·9 claims
- 1754US7906405B2Polysilicon structures resistant to laser anneal lightpipe waveguide effectsTEXAS INSTRUMENTS INC·Filed 2008·Granted Mar 15, 2011·0 cites·7 claims
- 1847US2022140132A1Passivation structures for semiconductor devicesCREE INC·Filed 2020·Application pending·0 cites
- 1946US2011165754A1Polysilicon structures resistant to laser anneal lightpipe waveguide effectsTEXAS INSTRUMENTS INC·Filed 2011·Application pending·0 cites
- 2044US6965136B2Photon-blocking layerTEXAS INSTRUMENTS INC·Filed 2003·Granted Nov 15, 2005·1 cites·14 claims
- 2140US6919219B2Photon-blocking layerTEXAS INSTRUMENTS INC·Filed 2002·Granted Jul 19, 2005·0 cites·12 claims
- 2237US8093716B2Contact fuse which does not touch a metal layerPITTS ROBERT L·Filed 2005·Granted Jan 10, 2012·0 cites·43 claims
- 2336US2005159004A1System for reducing corrosion effects of metallic semiconductor structuresFiled 2004·Application pending·0 cites
- 2432US5963779AIntegrated circuit using a back gate voltage for burn-in operationsTEXAS INSTRUMENTS INC·Filed 1998·Granted Oct 5, 1999·7 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →