Inventor · disambiguated record
John Manning Savidge Neilson
Also filed as: NEILSON JOHN M S · NEILSON JOHN MANNING SAUIDGE · NEILSON JOHN MANNING SAVIDGE · ROSNOWSKI WOJCIECH
50 granted patents·1,152 citations·filing 1975–2020
98Inventor score
Top patents by PatentIndex Score
50 records- 0196US8748976B1Dual RESURF trench field plate in vertical MOSFETTEXAS INSTRUMENTS INC·Filed 2013·Granted Jun 10, 2014·48 cites·19 claims
- 0296US4158206ASemiconductor deviceRCA CORP·Filed 1977·Granted Jun 12, 1979·79 cites·7 claims
- 0395US9136381B1Super junction MOSFET with integrated channel diodeTEXAS INSTRUMENTS INC·Filed 2014·Granted Sep 15, 2015·21 cites·18 claims
- 0495US5079608APower MOSFET transistor circuit with active clampHARRIS CORP·Filed 1990·Granted Jan 7, 1992·233 cites·20 claims
- 0592US4532534AMOSFET with perimeter channelRCA CORP·Filed 1982·Granted Jul 30, 1985·76 cites·4 claims
- 0689US5164802APower vdmosfet with schottky on lightly doped drain of lateral driver fetHARRIS CORP·Filed 1991·Granted Nov 17, 1992·94 cites·2 claims
- 0787US8288820B2High voltage power integrated circuitKOCON CHRISTOPHER BOGUSLAW·Filed 2010·Granted Oct 16, 2012·10 cites·19 claims
- 0887US4639762AMOSFET with reduced bipolar effectsRCA CORP·Filed 1984·Granted Jan 27, 1987·45 cites·12 claims
- 0986US9356133B2Medium voltage MOSFET deviceTEXAS INSTRUMENTS INC·Filed 2013·Granted May 31, 2016·5 cites·10 claims
- 1084US9881995B2MOSFET having dual-gate cells with an integrated channel diodeTEXAS INSTRUMENTS INC·Filed 2017·Granted Jan 30, 2018·3 cites·20 claims
- 1183US4199386AMethod of diffusing aluminum into monocrystalline siliconRCA CORP·Filed 1978·Granted Apr 22, 1980·41 cites·11 claims
- 1282US9324856B2MOSFET having dual-gate cells with an integrated channel diodeTEXAS INSTRUMENTS INC·Filed 2014·Granted Apr 26, 2016·4 cites·11 claims
- 1382US4639754AVertical MOSFET with diminished bipolar effectsRCA CORP·Filed 1985·Granted Jan 27, 1987·43 cites·7 claims
- 1481US5095343APower MOSFETHARRIS CORP·Filed 1990·Granted Mar 10, 1992·58 cites·13 claims
- 1580US5323036APower FET with gate segments covering drain regions disposed in a hexagonal patternHARRIS CORP·Filed 1992·Granted Jun 21, 1994·49 cites·12 claims
- 1679US9601612B2MOSFET having dual-gate cells with an integrated channel diodeTEXAS INSTRUMENTS INC·Filed 2016·Granted Mar 21, 2017·2 cites·20 claims
- 1777US9385196B2Fast switching IGBT with embedded emitter shorting contacts and method for making sameKOREC JACEK·Filed 2012·Granted Jul 5, 2016·3 cites·10 claims
- 1877US9230851B2Reduction of polysilicon residue in a trench for polysilicon trench filling processesTEXAS INSTRUMENTS INC·Filed 2014·Granted Jan 5, 2016·4 cites·12 claims
- 1977US5424563AApparatus and method for increasing breakdown voltage ruggedness in semiconductor devicesHARRIS CORP·Filed 1993·Granted Jun 13, 1995·39 cites·35 claims
- 2075US6080614AMethod of making a MOS-gated semiconductor device with a single diffusionINTERSIL CORP·Filed 1997·Granted Jun 27, 2000·44 cites·46 claims
- 2175US5023692APower MOSFET transistor circuitHARRIS SEMICONDUCTOR PATENTS·Filed 1989·Granted Jun 11, 1991·38 cites·8 claims
- 2275US4631564AGate shield structure for power MOS deviceRCA CORP·Filed 1984·Granted Dec 23, 1986·27 cites·7 claims
- 2374US8294210B2High voltage channel diodeKOCON CHRISTOPHER BOGUSLAW·Filed 2010·Granted Oct 23, 2012·4 cites·10 claims
- 2472US9484450B2Integrated channel diodeTEXAS INSTRUMENTS INC·Filed 2014·Granted Nov 1, 2016·2 cites·9 claims
- 2571US10741684B2Integrated channel diodeTEXAS INSTRUMENTS INC·Filed 2016·Granted Aug 11, 2020·1 cites·15 claims
- 2671US9525035B2Vertical high-voltage MOS transistor and method of forming the sameTEXAS INSTRUMENTS INC·Filed 2014·Granted Dec 20, 2016·2 cites·22 claims
- 2771US5399892AMesh geometry for MOS-gated semiconductor devicesHARRIS CORP·Filed 1993·Granted Mar 21, 1995·27 cites·24 claims
- 2869US11444191B2Integrated channel diodeTEXAS INSTRUMENTS INC·Filed 2020·Granted Sep 13, 2022·0 cites·20 claims
- 2969US5382825ASpiral edge passivation structure for semiconductor devicesHARRIS CORP·Filed 1993·Granted Jan 17, 1995·27 cites·29 claims
- 3067US6054369ALifetime control for semiconductor devicesINTERSIL CORP·Filed 1997·Granted Apr 25, 2000·36 cites·26 claims
- 3161US9450082B2Integrated termination for multiple trench field plateTEXAS INSTRUMENTS INC·Filed 2014·Granted Sep 20, 2016·1 cites·11 claims
- 3257US10811533B2Medium high voltage MOSFET deviceTEXAS INSTRUMENTS INC·Filed 2016·Granted Oct 20, 2020·0 cites·19 claims
- 3356US10553717B2Medium voltage MOSFET deviceTEXAS INSTRUMENTS INC·Filed 2016·Granted Feb 4, 2020·0 cites·19 claims
- 3455US5468668AMethod of forming MOS-gated semiconductor devices having mesh geometry patternHARRIS CORP·Filed 1995·Granted Nov 21, 1995·17 cites·10 claims
- 3554US10573718B2Vertical high-voltage MOS transistorTEXAS INSTRUMENTS INC·Filed 2016·Granted Feb 25, 2020·0 cites·26 claims
- 3650US9941383B2Fast switching IGBT with embedded emitter shorting contacts and method for making sameTEXAS INSTRUMENTS INC·Filed 2016·Granted Apr 10, 2018·0 cites·14 claims
- 3750US9673317B2Integrated termination for multiple trench field plateTEXAS INSTRUMENTS INC·Filed 2016·Granted Jun 6, 2017·0 cites·20 claims
- 3848US5455442ACOMFET switch and methodHARRIS CORP·Filed 1995·Granted Oct 3, 1995·14 cites·16 claims
- 3946US4062032AGate turn off semiconductor rectifiersRCA CORP·Filed 1975·Granted Dec 6, 1977·6 cites·13 claims
- 4045US4214255AGate turn-off triac with dual low conductivity regions contacting central gate regionRCA CORP·Filed 1977·Granted Jul 22, 1980·6 cites·17 claims
- 4143US9245994B2MOSFET with curved trench feature coupling termination trench to active trenchTEXAS INSTRUMENTS INC·Filed 2014·Granted Jan 26, 2016·0 cites·16 claims
- 4242US5422288AMethod of doping a JFET region in a MOS-gated semiconductor deviceHARRIS CORP·Filed 1994·Granted Jun 6, 1995·8 cites·7 claims
- 4341US4292646ASemiconductor thyristor device having integral ballast meansRCA CORP·Filed 1977·Granted Sep 29, 1981·7 cites·8 claims
- 4440US4156248AGate turn-off semiconductor controlled rectifier device with highly doped buffer region portionRCA CORP·Filed 1977·Granted May 22, 1979·4 cites·3 claims
- 4537US5218220APower fet having reduced threshold voltageHARRIS CORP·Filed 1991·Granted Jun 8, 1993·6 cites·6 claims
- 4636US4398206ATransistor with integrated diode and resistorRCA CORP·Filed 1981·Granted Aug 9, 1983·4 cites·4 claims
- 4735US5940689AMethod of fabricating UMOS semiconductor devices using a self-aligned, reduced mask processHARRIS CORP·Filed 1997·Granted Aug 17, 1999·4 cites·15 claims
- 4834US5877044AMethod of making MOS-gated semiconductor devicesHARRIS CORP·Filed 1997·Granted Mar 2, 1999·4 cites·5 claims
- 4931US4297149AMethod of treating SiPOS passivated high voltage semiconductor deviceRCA CORP·Filed 1980·Granted Oct 27, 1981·5 cites·6 claims
- 5030US5243211APower fet with shielded channelsHARRIS CORP·Filed 1991·Granted Sep 7, 1993·1 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →