Inventor · disambiguated record
John J. Plombon
Also filed as: PLOMBON JOHN · PLOMBON JOHN J
25 granted patents·33 pending applications·93 citations·filing 1999–2024
94Inventor score
Top patents by PatentIndex Score
58 records- 0197US12009018B2Transition metal dichalcogenide based spin orbit torque memory deviceINTEL CORP·Filed 2022·Granted Jun 11, 2024·2 cites·19 claims
- 0291US7682891B2Tunable gate electrode work function material for transistor applicationsINTEL CORP·Filed 2006·Granted Mar 23, 2010·19 cites·20 claims
- 0386US11393515B2Transition metal dichalcogenide based spin orbit torque memory deviceINTEL CORP·Filed 2018·Granted Jul 19, 2022·2 cites·20 claims
- 0486US11245068B2Transition metal dichalcogenide based magnetoelectric memory deviceINTEL CORP·Filed 2018·Granted Feb 8, 2022·2 cites·20 claims
- 0585US8319287B2Tunable gate electrode work function material for transistor applicationsLAVOIE ADRIEN R·Filed 2010·Granted Nov 27, 2012·7 cites·18 claims
- 0684US7354849B2Catalytically enhanced atomic layer deposition processINTEL CORP·Filed 2006·Granted Apr 8, 2008·13 cites·15 claims
- 0782US7851360B2Organometallic precursors for seed/barrier processes and methods thereofINTEL CORP·Filed 2007·Granted Dec 14, 2010·9 cites·30 claims
- 0879US10658487B2Semiconductor devices having ruthenium phosphorus thin filmsINTEL CORP·Filed 2015·Granted May 19, 2020·1 cites·19 claims
- 0979US8425987B2Surface charge enhanced atomic layer deposition of pure metallic filmsDOMINGUEZ JUAN E·Filed 2008·Granted Apr 23, 2013·5 cites·13 claims
- 1077US10068845B2Seam healing of metal interconnectsINTEL CORP·Filed 2014·Granted Sep 4, 2018·3 cites·16 claims
- 1177US7858525B2Fluorine-free precursors and methods for the deposition of conformal conductive films for nanointerconnect seed and fillINTEL CORP·Filed 2007·Granted Dec 28, 2010·5 cites·5 claims
- 1275US7749906B2Using unstable nitrides to form semiconductor structuresINTEL CORP·Filed 2006·Granted Jul 6, 2010·3 cites·17 claims
- 1373US11696514B2Transition metal dichalcogenide based magnetoelectric memory deviceINTEL CORP·Filed 2021·Granted Jul 4, 2023·0 cites·20 claims
- 1470US9385033B2Method of forming a metal from a cobalt metal precursorBLACKWELL JAMES M·Filed 2013·Granted Jul 5, 2016·3 cites·10 claims
- 1570US7476615B2Deposition process for iodine-doped ruthenium barrier layersINTEL CORP·Filed 2006·Granted Jan 13, 2009·3 cites·45 claims
- 1664US11502188B2Apparatus and method for boosting signal in magnetoelectric spin orbit logicINTEL CORP·Filed 2018·Granted Nov 15, 2022·0 cites·20 claims
- 1763US7704895B2Deposition method for high-k dielectric materialsINTEL CORP·Filed 2008·Granted Apr 27, 2010·1 cites·10 claims
- 1861US12260296B1Diamondoid materials in quantum computing devicesINTEL CORP·Filed 2020·Granted Mar 25, 2025·0 cites·20 claims
- 1959US2025393290A1Ferroelectric field effect transistors (fefets) with relaxor ferroelectric materialsINTEL CORP·Filed 2024·Application pending·0 cites
- 2058US7524765B2Direct tailoring of the composition and density of ALD filmsINTEL CORP·Filed 2005·Granted Apr 28, 2009·2 cites·8 claims
- 2157US11626451B2Magnetic memory device with ruthenium diffusion barrierINTEL CORP·Filed 2019·Granted Apr 11, 2023·0 cites·23 claims
- 2257US10629525B2Seam healing of metal interconnectsINTEL CORP·Filed 2018·Granted Apr 21, 2020·0 cites·17 claims
- 2357US2025311376A1Coupled multi-layer magnetoelectric, ferroelectric, and ferromagnetic structuresINTEL CORP·Filed 2024·Application pending·0 cites
- 2456US2025380487A1Ferroelectric field effect transistors (fefets) with improper ferroelectric materialsINTEL CORP·Filed 2024·Application pending·0 cites
- 2556US2025311636A1Magnetoelectric spin–orbit (meso) device with unconventional spin-to-charge conversionINTEL CORP·Filed 2024·Application pending·0 cites
- 2656US2025008852A1Two-terminal ferroelectric perovskite diode memory elementINTEL CORP·Filed 2023·Application pending·0 cites
- 2756US2025221318A1Magnetoelectric spin–orbit (meso) device with antiferromagnetic spin injection and spin absorption for increased output voltageINTEL CORP·Filed 2023·Application pending·0 cites
- 2856US2025311639A1Spin-to-charge conversion using extrinsic spin hall effect and orbital hall effectINTEL CORP·Filed 2024·Application pending·0 cites
- 2955US2024429301A1Perovskite-based field effect transistor (fet) devices enabled by epitaxial lateral overgrowthINTEL CORP·Filed 2023·Application pending·0 cites
- 3055US2024201586A1Precursors and methods for producing tin-based photoresistINTEL CORP·Filed 2022·Application pending·0 cites
- 3154US8344352B2Using unstable nitrides to form semiconductor structuresINTEL CORP·Filed 2011·Granted Jan 1, 2013·0 cites·20 claims
- 3254US2024147867A1Magnetoelectric logic with magnetic tunnel junctionsINTEL CORP·Filed 2022·Application pending·0 cites
- 3354US2025006791A1Perovskite oxide field effect transistor with highly doped source and drainINTEL CORP·Filed 2023·Application pending·0 cites
- 3453US2025006840A1Negative capacitance field effect transistor (ncfet) devicesINTEL CORP·Filed 2023·Application pending·0 cites
- 3553US2025006839A1P-type perovskite ferroelectric field effect transistor (fefet) devicesINTEL CORP·Filed 2023·Application pending·0 cites
- 3653US2025006841A1Technologies for barrier layers in perovskite transistorsINTEL CORP·Filed 2023·Application pending·0 cites
- 3752US7982204B2Using unstable nitrides to form semiconductor structuresINTEL CORP·Filed 2010·Granted Jul 19, 2011·0 cites·6 claims
- 3852US2024113212A1Technologies for perovskite transistorsINTEL CORP·Filed 2022·Application pending·0 cites
- 3951US2023200081A1Transistor devices with perovskite filmsINTEL CORP·Filed 2021·Application pending·0 cites
- 4051US2024222475A1Technologies for high-performance magnetoelectric spin-orbit logicINTEL CORP·Filed 2022·Application pending·0 cites
- 4151US2024120415A1Technologies for atomic layer deposition for ferroelectric transistorsINTEL CORP·Filed 2022·Application pending·0 cites
- 4251US2024113220A1Technologies for transistors with a thin-film ferroelectricINTEL CORP·Filed 2022·Application pending·0 cites
- 4351US2023200079A1Ferroelectric oxide- and ferroelectric monochalcogenide-based capacitorsINTEL CORP·Filed 2021·Application pending·0 cites
- 4450US2024222506A1Field effect transistor comprising transition metal dichalcogenide (tmd) and ferroelectric materialINTEL CORP·Filed 2022·Application pending·0 cites
- 4550US2024105810A1Vertical ferrorelectric field-effect transistor (fefet) devicesINTEL CORP·Filed 2022·Application pending·0 cites
- 4650US2024097031A1Ferrorelectric field-effect transistor (fefet) devices with low operating voltage capabilitiesINTEL CORP·Filed 2022·Application pending·0 cites
- 4749US2024105822A1Stacked perovskite ferroelectric field effect transistor (fefet) devicesINTEL CORP·Filed 2022·Application pending·0 cites
- 4849US2008182021A1Continuous ultra-thin copper film formed using a low thermal budgetSIMKA HARSONO S·Filed 2007·Application pending·0 cites
- 4946US2023086080A1Magnetoelectric spin-orbit logic device with a topological insulator superlatticeINTEL CORP·Filed 2021·Application pending·0 cites
- 5045US2009022958A1Amorphous metal-metalloid alloy barrier layer for ic devicesPLOMBON JOHN J·Filed 2007·Application pending·0 cites
Showing the top 50 of 58 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when John J. Plombon files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →