Inventor · disambiguated record
Jörg Rottstegge
Also filed as: ROTTSTEGGE JOERG · ROTTSTEGGE JORG
16 granted patents·2 pending applications·304 citations·filing 2002–2003
90Inventor score
Files withINFINEON TECHNOLOGIES AG16
Top patents by PatentIndex Score
18 records- 0196US6893972B2Process for sidewall amplification of resist structures and for the production of structures having reduced structure sizeINFINEON TECHNOLOGIES AG·Filed 2002·Granted May 17, 2005·280 cites·12 claims
- 0262US6770423B2Negative resist process with simultaneous development and silylationINFINEON TECHNOLOGIES AG·Filed 2002·Granted Aug 3, 2004·7 cites·8 claims
- 0351US7052820B2Silicon-containing resist for photolithographyINFINEON TECHNOLOGIES AG·Filed 2002·Granted May 30, 2006·3 cites·10 claims
- 0447US7045274B2Process for structuring a photoresist by UV at less than 160 NM and then aromatic and/or alicyclic amplificationINFINEON TECHNOLOGIES AG·Filed 2002·Granted May 16, 2006·2 cites·12 claims
- 0547US6998215B2Negative resist process with simultaneous development and chemical consolidation of resist structuresINFINEON TECHNOLOGIES AG·Filed 2002·Granted Feb 14, 2006·2 cites·11 claims
- 0647US6946236B2Negative resist process with simultaneous development and aromatization of resist structuresINFINEON TECHNOLOGIES AG·Filed 2002·Granted Sep 20, 2005·2 cites·8 claims
- 0745US7041426B2Photoresist based on polycondensates and having an increased resolution for use in 157 nanometer lithographyINFINEON TECHNOLOGIES AG·Filed 2002·Granted May 9, 2006·1 cites·16 claims
- 0842US6806027B2Chemically amplified photoresist and process for structuring substituents using transparency enhancement of resist copolymers for 157 nm photolithography through the use of fluorinated cinnamic acid derivativesINFINEON TECHNOLOGIES AG·Filed 2002·Granted Oct 19, 2004·5 cites·14 claims
- 0936US7067234B2Chemical consolidation of photoresists in the UV rangeINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jun 27, 2006·0 cites·9 claims
- 1036US6835528B2Fluorine-containing photoresist having reactive anchors for chemical amplification and improved copolymerization propertiesINFINEON TECHNOLOGIES AG·Filed 2003·Granted Dec 28, 2004·0 cites·14 claims
- 1135US7018784B2Process for increasing the etch resistance and for reducing the hole and trench width of a photoresist structure using solvent systems of low polarityINFINEON TECHNOLOGIES AG·Filed 2003·Granted Mar 28, 2006·0 cites·19 claims
- 1235US6759184B2Amplification of resist structures of fluorinated resist polymers by structural growth of the structures by targeted chemical bonding of fluorinated oligomersINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jul 6, 2004·2 cites·12 claims
- 1335US2003082483A1Chemically amplified photoresist and process for structuring substrates having resist copolymers with enhanced transparency resulting from fluorinating the photochemically cleavable leaving groups and being applicable to 157 nm photolithographyFiled 2002·Application pending·0 cites
- 1434US7033740B2Photoresists with reaction anchors for chemical consolidation of resist structures for exposures at 157 nmINFINEON TECHNOLOGIES AG·Filed 2002·Granted Apr 25, 2006·0 cites·4 claims
- 1534US6974655B2Silicon resist for photolithography at short exposure wavelengths and process for making photoresistsINFINEON TECHNOLOGIES AG·Filed 2002·Granted Dec 13, 2005·0 cites·9 claims
- 1634US2003096194A1Silylating process for photoresists in the UV regionFiled 2002·Application pending·0 cites
- 1729US7125640B2Resist for photolithography having reactive groups for subsequent modification of the resist structuresINFINEON TECHNOLOGIES AG·Filed 2003·Granted Oct 24, 2006·0 cites·8 claims
- 1828US6899997B2Process for modifying resist structures and resist films from the aqueous phaseINFINEON TECHNOLOGIES AG·Filed 2003·Granted May 31, 2005·0 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →