Inventor · disambiguated record
Joongshik Shin
Also filed as: SHIN JOONGSHIK
34 granted patents·14 pending applications·117 citations·filing 2014–2025
96Inventor score
Top patents by PatentIndex Score
48 records- 0196US10381369B2Vertical semiconductor memory device structures including vertical channel structures and vertical dummy structuresSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Aug 13, 2019·19 cites·16 claims
- 0295US10049744B2Three-dimensional (3D) semiconductor memory devices and methods of manufacturing the sameJEONG DA WOON·Filed 2016·Granted Aug 14, 2018·25 cites·20 claims
- 0394US10777572B2Three-dimensional semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Sep 15, 2020·11 cites·20 claims
- 0494US10777565B2Three-dimensional semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Sep 15, 2020·10 cites·19 claims
- 0593US10373673B2Semiconductor memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Aug 6, 2019·11 cites·20 claims
- 0692US12232323B2Three-dimensional semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Feb 18, 2025·1 cites·20 claims
- 0792US10482964B2Three-dimensional (3D) semiconductor memory devices and methods of manufacturing the sameJEONG DA WOON·Filed 2018·Granted Nov 19, 2019·9 cites·19 claims
- 0891US10878908B2Three-dimensional (3D) semiconductor memory devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Dec 29, 2020·6 cites·15 claims
- 0989US11437397B2Three-dimensional semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Sep 6, 2022·6 cites·20 claims
- 1089US11362105B2Vertical memory device with support layerSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jun 14, 2022·2 cites·18 claims
- 1188US12302561B2Semiconductor device, method of manufacturing the same, and massive data storage system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted May 13, 2025·2 cites·20 claims
- 1288US11063057B2Three-dimensional semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jul 13, 2021·8 cites·17 claims
- 1388US10032666B2Semiconductor memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 24, 2018·6 cites·20 claims
- 1484US2025254878A1Vertical memory device with multiple support layersSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1581US11430808B2Memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 30, 2022·1 cites·20 claims
- 1680US2025234549A1Memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1779US2025070029A1Three-dimensional semiconductor device including a through-via structure having a via liner having protruding portionsSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1876US12310021B2Vertical memory device with multiple support layersSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted May 20, 2025·0 cites·20 claims
- 1976US2025107093A1Semiconductor device including separation patterns and an electronic systemSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2075US11839084B2Three-dimensional semiconductor memory devices having a vertical semiconductor patternSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Dec 5, 2023·0 cites·20 claims
- 2175US2025374544A1Three-dimensional semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2274US12289888B2Memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Apr 29, 2025·0 cites·20 claims
- 2372US12165976B2Three-dimensional semiconductor device including a through-via structure having a via liner having protruding portionsSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Dec 10, 2024·0 cites·18 claims
- 2470US11348942B2Three-dimensional semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 31, 2022·0 cites·20 claims
- 2566US11387184B2Three-dimensional semiconductor device including a through-via structure having a via liner having protruding portionsSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jul 12, 2022·0 cites·19 claims
- 2665US12193232B2Semiconductor device including separation patterns and an electronic systemSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 7, 2025·0 cites·17 claims
- 2765US12004350B2Three-dimensional semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jun 4, 2024·0 cites·20 claims
- 2861US2025301655A1Semiconductor devices and data storage systems including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2959US11424259B2Three-dimensional semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 23, 2022·0 cites·20 claims
- 3059US2025275138A1Semiconductor devices and data storage systems including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3159US2025126789A1Three-dimensional semiconductor memory device and electronic system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3259US2025331157A1Semiconductor devices and data storage systems including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3358US11785768B2Three-dimensional semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 10, 2023·0 cites·20 claims
- 3457US10886288B2Vertical semiconductor memory device structures including vertical channel structures and vertical dummy structuresSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 5, 2021·0 cites·20 claims
- 3557US2024381641A1Vertical memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3654US12501615B2Three-dimensional semiconductor memory device and electronic system including vertical structures and seed layerSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Dec 16, 2025·0 cites·17 claims
- 3753US2024107763A1Semiconductor devices and data storage systems including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3852US12439600B2Semiconductor devices and data storage systems including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 7, 2025·0 cites·20 claims
- 3950US10998330B2Semiconductor device having a peripheral active pattern and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted May 4, 2021·0 cites·19 claims
- 4050US2023062069A1Semiconductor device and electronic systemSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 4149US10593393B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Mar 17, 2020·0 cites·18 claims
- 4247US11877451B2Vertical memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 16, 2024·0 cites·18 claims
- 4347US2015162343A1Semiconductor device and method of manufacturing the samePARK HYUNMOG·Filed 2014·Application pending·0 cites
- 4446US11980028B2Semiconductor device and data storage system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted May 7, 2024·0 cites·20 claims
- 4545US11696447B2Semiconductor device and electronic system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 4, 2023·0 cites·20 claims
- 4643US12058859B2Vertical memory devices having support structures to replace dummy channels and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 6, 2024·0 cites·19 claims
- 4743US2021305150A1Memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Application pending·0 cites
- 4836US10515979B2Three-dimensional semiconductor devices with inclined gate electrodesSHIN JOONGSHIK·Filed 2017·Granted Dec 24, 2019·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →