Inventor · disambiguated record
Josef Winnerl
Also filed as: WINNERL JOSEF
23 granted patents·805 citations·filing 1986–2010
97Inventor score
Top patents by PatentIndex Score
23 records- 0198US4855245AMethod of manufacturing integrated circuit containing bipolar and complementary MOS transistors on a common substrateSIEMENS AG·Filed 1988·Granted Aug 8, 1989·266 cites·10 claims
- 0295US4761384AForming retrograde twin wells by outdiffusion of impurity ions in epitaxial layer followed by CMOS device processingSIEMENS AG·Filed 1987·Granted Aug 2, 1988·154 cites·16 claims
- 0382US9115821B2Condensate valveBAUER HEINZ·Filed 2010·Granted Aug 25, 2015·6 cites·6 claims
- 0480US4798974AIntegrated circuit comprising a latch-up protection circuit in complementary MOS-circuitry technologySIEMENS AG·Filed 1987·Granted Jan 17, 1989·37 cites·15 claims
- 0579US5034338ACircuit containing integrated bipolar and complementary MOS transistors on a common substrateSIEMENS AG·Filed 1989·Granted Jul 23, 1991·30 cites·7 claims
- 0678US4717686AMethod for the simultaneous manufacture of bipolar and complementary MOS transistors on a common silicon substrateSIEMENS AG·Filed 1986·Granted Jan 5, 1988·37 cites·21 claims
- 0774US5846879AContact structure for vertical chip connectionsSIEMENS AG·Filed 1994·Granted Dec 8, 1998·54 cites·5 claims
- 0870US4791316ALatch-up protection circuit for integrated circuits using complementary MOS circuit technologySIEMENS AG·Filed 1987·Granted Dec 13, 1988·21 cites·21 claims
- 0970US4791317ALatch-up protection circuit for integrated circuits using complementary mos circuit technologySIEMENS AG·Filed 1987·Granted Dec 13, 1988·21 cites·19 claims
- 1065US5798297AMethod for producing a semiconductor component with electrical connection terminals for high integration densitySIEMENS AG·Filed 1994·Granted Aug 25, 1998·35 cites·5 claims
- 1160US5013678AMethod of making an integrated circuit comprising load resistors arranged on the field oxide zones which separate the active transistor zonesSIEMENS AG·Filed 1989·Granted May 7, 1991·25 cites·20 claims
- 1257US4884117ACircuit containing integrated bipolar and complementary MOS transistors on a common substrateSIEMENS AG·Filed 1989·Granted Nov 28, 1989·13 cites·3 claims
- 1353US4960489AMethod for self-aligned manufacture of contacts between interconnects contained in wiring levels arranged above one another in an integrated circuitSIEMENS AG·Filed 1989·Granted Oct 2, 1990·20 cites·10 claims
- 1452US5126816AIntegrated circuit with anti latch-up circuit in complementary MOS circuit technologySIEMENS AG·Filed 1991·Granted Jun 30, 1992·15 cites·29 claims
- 1551US5148250ABipolar transistor as protective element for integrated circuitsSIEMENS AG·Filed 1991·Granted Sep 15, 1992·15 cites·14 claims
- 1648US4873668AIntegrated circuit in complementary circuit technology comprising a substrate bias generatorSIEMENS AG·Filed 1987·Granted Oct 10, 1989·11 cites·7 claims
- 1744US5045716AIntegrated circuit in complementary circuit technology comprising a substrate bias voltage generatorSIEMENS AG·Filed 1989·Granted Sep 3, 1991·7 cites·15 claims
- 1842US5100811AIntegrated circuit containing bi-polar and complementary mos transistors on a common substrate and method for the manufacture thereofSIEMENS AG·Filed 1990·Granted Mar 31, 1992·13 cites·19 claims
- 1938US6034902ASolid-state memory deviceSIEMENS AG·Filed 1997·Granted Mar 7, 2000·6 cites·10 claims
- 2037US5883832AElectrically erasable and programmable non-volatile storage locationSIEMENS AG·Filed 1996·Granted Mar 16, 1999·5 cites·7 claims
- 2133US6136717AMethod for producing a via hole to a doped regionSIEMENS AG·Filed 1993·Granted Oct 24, 2000·8 cites·6 claims
- 2233US4807010AIntegrated circuit in complementary circuit technology comprising a substrate bias voltage generator and a Schottky diodeSIEMENS AG·Filed 1986·Granted Feb 21, 1989·5 cites·6 claims
- 2331US6154084AMethod for switching voltages higher than a supply voltage on a semiconductor chip with a circuit configurationINFINEON TECHNOLOGIES AG·Filed 1997·Granted Nov 28, 2000·1 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →