Inventor · disambiguated record
Jong In Yang
Also filed as: YANG JONG I · YANG JONG IN
24 granted patents·6 pending applications·214 citations·filing 2006–2018
95Inventor score
Files withSAMSUNG ELECTRONICS CO LTD15YANG JONG-IN6SAMSUNG LED CO LTD3SAMSUNG ELECTRO MECH2KIM CHEOL-KYU1
Top patents by PatentIndex Score
30 records- 0198US9293675B2Semiconductor light-emitting device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Mar 22, 2016·26 cites·22 claims
- 0298US9099631B2Semiconductor light-emitting device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Aug 4, 2015·34 cites·50 claims
- 0398US8735932B2Light-emitting device including a connection layer formed on a side surface thereofKIM TAE-HYUNG·Filed 2011·Granted May 27, 2014·75 cites·16 claims
- 0494US8872205B2Semiconductor light-emitting device and method of manufacturing the sameYANG JONG-IN·Filed 2011·Granted Oct 28, 2014·9 cites·8 claims
- 0594US7838315B2Method of manufacturing vertical light emitting diodeSAMSUNG LED CO LTD·Filed 2008·Granted Nov 23, 2010·32 cites·6 claims
- 0693US8975655B2Semiconductor light-emitting device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Mar 10, 2015·6 cites·7 claims
- 0785US9324904B2Semiconductor light emitting device and light emitting apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Apr 26, 2016·5 cites·10 claims
- 0883US10038127B2Semiconductor light-emitting device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jul 31, 2018·2 cites·20 claims
- 0981US9660163B2Semiconductor light-emitting device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 23, 2017·2 cites·19 claims
- 1079US8901586B2Light emitting device and method of manufacturing the sameKIM HAK HWAN·Filed 2011·Granted Dec 2, 2014·3 cites·15 claims
- 1178US10978614B2Light-emitting deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 13, 2021·1 cites·17 claims
- 1276US8932891B2Method for manufacturing nitride based single crystal substrate and method for manufacturing nitride based semiconductor deviceYANG JONG IN·Filed 2006·Granted Jan 13, 2015·2 cites·5 claims
- 1376US8110417B2Method of forming pattern on group III nitride semiconductor substrate and method of manufacturing group III nitride semiconductor light emitting deviceYANG JONG IN·Filed 2010·Granted Feb 7, 2012·3 cites·9 claims
- 1474US10930817B2Light-emitting deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 23, 2021·1 cites·15 claims
- 1572US9166109B2Semiconductor light emitting element, and light emitting device having conductive vias of first electrode structure disposed below second pad electrode of second electrode structureSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Oct 20, 2015·2 cites·19 claims
- 1672US9099629B2Semiconductor light emitting device and light emitting apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Aug 4, 2015·3 cites·10 claims
- 1770US7816284B2Method of forming pattern on group III nitride semiconductor substrate and method of manufacturing group III nitride semiconductor light emitting deviceSAMSUNG LED CO LTD·Filed 2009·Granted Oct 19, 2010·2 cites·5 claims
- 1868US8110424B2Surface treatment method of group III nitride semiconductor and manufacturing method of the group III nitride semiconductorYANG JONG IN·Filed 2009·Granted Feb 7, 2012·2 cites·14 claims
- 1966US8334156B2Nitride semiconductor single crystal substrate, and methods of fabricating the same and a vertical nitride semiconductor light emitting diode using the sameKIM CHEOL KYU·Filed 2009·Granted Dec 18, 2012·2 cites·20 claims
- 2065US8476639B2Group III nitride semiconductor and group III nitride semiconductor structureYANG JONG IN·Filed 2011·Granted Jul 2, 2013·1 cites·12 claims
- 2162US9362718B2Semiconductor light emitting deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jun 7, 2016·1 cites·19 claims
- 2260US2015060925A1Light emitting device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 2356US2010291719A1Method for manufacturing nitride based single crystal substrate and method for manufacturing nitride based semiconductor deviceSAMSUNG ELECTRO MECAHNICS CO L·Filed 2010·Application pending·0 cites
- 2454US7859086B2Nitride semiconductor single crystal substrate, and methods of fabricating the same and a vertical nitride semiconductor light emitting diode using the sameSAMSUNG LED CO LTD·Filed 2007·Granted Dec 28, 2010·0 cites·7 claims
- 2554US2010090246A1Vertical nitride-based light emitting diode and method of manufacturing the sameSAMSUNG ELECTRO MECH·Filed 2008·Application pending·0 cites
- 2653US8877562B2Method of manufacturing light-emitting deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Nov 4, 2014·0 cites·20 claims
- 2752US2014106483A1Vertical nitride-based light emitting diode having ohmic contact pattern and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 2841US2013020554A1Semiconductor light emitting device and light emitting apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2012·Application pending·0 cites
- 2941US2007141741A1Semiconductor laminated structure and method of manufacturing nitirde semiconductor crystal substrate and nitirde semiconductor deviceSAMSUNG ELECTRO MECH·Filed 2006·Application pending·0 cites
- 3040US8829548B2Light emitting device package and fabrication method thereofYANG JONG IN·Filed 2012·Granted Sep 9, 2014·0 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →