Inventor · disambiguated record
Jong Shik Yoon
Also filed as: YOON JONG · YOON JONG S · YOON JONG SHIK
14 granted patents·1 pending application·117 citations·filing 2004–2021
91Inventor score
Top patents by PatentIndex Score
15 records- 0192US8952452B2Semiconductor devices and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Feb 10, 2015·20 cites·14 claims
- 0291US9922979B2Integrated circuit device and method of manufacturing the sameCHUNG JAE YUP·Filed 2016·Granted Mar 20, 2018·12 cites·20 claims
- 0389US7098099B1Semiconductor device having optimized shallow junction geometries and method for fabrication thereofTEXAS INSTRUMENTS INC·Filed 2005·Granted Aug 29, 2006·20 cites·18 claims
- 0487US9209177B2Semiconductor devices including gates and dummy gates of different materialsSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Dec 8, 2015·9 cites·17 claims
- 0582US7229869B2Method for manufacturing a semiconductor device using a sidewall spacer etchbackTEXAS INSTRUMENTS INC·Filed 2005·Granted Jun 12, 2007·11 cites·30 claims
- 0679US7514331B2Method of manufacturing gate sidewalls that avoids recessingTEXAS INSTRUMENTS INC·Filed 2006·Granted Apr 7, 2009·6 cites·19 claims
- 0777US9412693B2Semiconductor device having jumper pattern and blocking patternSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Aug 9, 2016·4 cites·20 claims
- 0870US7045436B2Method to engineer the inverse narrow width effect (INWE) in CMOS technology using shallow trench isolation (STI)TEXAS INSTRUMENTS INC·Filed 2004·Granted May 16, 2006·17 cites·22 claims
- 0970US7018888B2Method for manufacturing improved sidewall structures for use in semiconductor devicesTEXAS INSTRUMENTS INC·Filed 2004·Granted Mar 28, 2006·16 cites·18 claims
- 1063US7795085B2Intentional pocket shadowing to compensate for the effects of cross-diffusion in SRAMsTEXAS INSTRUMENTS INC·Filed 2006·Granted Sep 14, 2010·2 cites·4 claims
- 1158US12356697B2Integrated circuit device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 8, 2025·0 cites·19 claims
- 1253US7811893B2Shallow trench isolation stress adjuster for MOS transistorTEXAS INSTRUMENTS INC·Filed 2009·Granted Oct 12, 2010·0 cites·9 claims
- 1347US9754789B2Method of fabricating semiconductor device and computing system for implementing the methodKIM YOON-HAE·Filed 2014·Granted Sep 5, 2017·0 cites·19 claims
- 1443US9425148B2Semiconductor devices having contacts with intervening spacers and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Aug 23, 2016·0 cites·20 claims
- 1540US2005233540A1Minimizing transistor variations due to shallow trench isolation stressTEXAS INSTRUMENTS INC·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →