Inventor · disambiguated record
Joonah Yoon
Also filed as: YOON JOONAH
6 granted patents·1 pending application·46 citations·filing 2014–2017
77Inventor score
Files withIBM7
Top patents by PatentIndex Score
7 records- 0197US9318585B1Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having a wide band gap emitter/collector which are epitaxially grownIBM·Filed 2015·Granted Apr 19, 2016·30 cites·6 claims
- 0296US9437718B1Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having a wide band gap emitter/collector which are epitaxially grownIBM·Filed 2015·Granted Sep 6, 2016·16 cites·14 claims
- 0366US11152144B2Electrolessly formed high resistivity magnetic materialsIBM·Filed 2017·Granted Oct 19, 2021·0 cites·4 claims
- 0462US10043607B2Electrolessly formed high resistivity magnetic materialsIBM·Filed 2016·Granted Aug 7, 2018·0 cites·9 claims
- 0557US10784045B2Laminated magnetic materials for on-chip magnetic inductors/transformersIBM·Filed 2015·Granted Sep 22, 2020·0 cites·3 claims
- 0657US10763038B2Laminated magnetic materials for on-chip magnetic inductors/transformersIBM·Filed 2015·Granted Sep 1, 2020·0 cites·11 claims
- 0743US2016087068A1Lateral bipolar transistor with base extension regionIBM·Filed 2014·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →