Inventor · disambiguated record
Jun Ku Ahn
Also filed as: AHN JUN KU
9 granted patents·5 pending applications·5 citations·filing 2010–2024
77Inventor score
Top patents by PatentIndex Score
14 records- 0184US11581486B2Electronic device and method of fabricating the sameSK HYNIX INC·Filed 2020·Granted Feb 14, 2023·2 cites·17 claims
- 0279US12439612B2Semiconductor device and manufacturing method of the semiconductor deviceSK HYNIX INC·Filed 2024·Granted Oct 7, 2025·0 cites·20 claims
- 0378US9318700B2Method of manufacturing a phase change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Apr 19, 2016·3 cites·20 claims
- 0467US11974442B2Semiconductor device and manufacturing method of the semiconductor deviceSK HYNIX INC·Filed 2021·Granted Apr 30, 2024·0 cites·10 claims
- 0563US12356874B2Semiconductor device and method of manufacturing semiconductor deviceSK HYNIX INC·Filed 2021·Granted Jul 8, 2025·0 cites·16 claims
- 0655US11707005B2Chalcogenide material, variable resistance memory device and electronic deviceSK HYNIX INC·Filed 2020·Granted Jul 18, 2023·0 cites·14 claims
- 0754US10995401B2Sputtering target and manufacturing method thereofSK HYNIX INC·Filed 2019·Granted May 4, 2021·0 cites·12 claims
- 0851US2022310372A1Pvd chamber shield structure including improved cotaing layer or shieldSK HYNIX INC·Filed 2021·Application pending·0 cites
- 0950US2025241214A1Semiconductor deviceSK HYNIX INC·Filed 2024·Application pending·0 cites
- 1045US11968912B2Sputtering target including carbon-doped GST and method for fabricating electronic device using the sameSK HYNIX INC·Filed 2021·Granted Apr 23, 2024·0 cites·10 claims
- 1139US2023402095A1Semiconductor memory device including chalcogenideSK HYNIX INC·Filed 2022·Application pending·0 cites
- 1235US2017309491A1Method of forming tungsten film and method of fabricating semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Application pending·0 cites
- 1330US2015325787A1Method of filling an opening and method of manufacturing a phase-change memory device using the sameAHN JUN-KU·Filed 2015·Application pending·0 cites
- 1425US8154907B2Method for fabricating indium (In)-antimony (Sb)-tellurium (Te) nanowires and phase-change memory device comprising the nanowiresYOON SOON-GIL·Filed 2010·Granted Apr 10, 2012·0 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →