Inventor · disambiguated record
Jung-Hung Chang
Also filed as: CHANG JUNG-HUNG
64 granted patents·53 pending applications·60 citations·filing 2017–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD117
Top patents by PatentIndex Score
117 records- 0198US11855096B2Uniform gate width for nanostructure devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·4 cites·20 claims
- 0298US11315925B2Uniform gate width for nanostructure devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 26, 2022·7 cites·20 claims
- 0397US12342616B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 24, 2025·2 cites·20 claims
- 0497US11996483B2FET with wrap-around silicide and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 28, 2024·2 cites·20 claims
- 0597US11967594B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 23, 2024·2 cites·20 claims
- 0697US11450663B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·3 cites·20 claims
- 0795US11978674B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 7, 2024·2 cites·18 claims
- 0895US11916122B2Gate all around transistor with dual inner spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 27, 2024·2 cites·20 claims
- 0995US11398550B2Semiconductor device with facet S/D feature and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 26, 2022·3 cites·20 claims
- 1095US11322409B2Multi-gate devices and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 3, 2022·3 cites·20 claims
- 1195US11264502B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 1, 2022·3 cites·20 claims
- 1294US12074204B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 27, 2024·2 cites·20 claims
- 1394US11695076B2FET with wrap-around silicide and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 4, 2023·2 cites·20 claims
- 1493US10944009B2Methods of fabricating a FinFET device with wrap-around silicide source/drain structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 9, 2021·5 cites·20 claims
- 1591US11450754B2Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·2 cites·20 claims
- 1691US11417777B2Enlargement of GAA nanostructureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 16, 2022·2 cites·20 claims
- 1790US11309424B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 19, 2022·2 cites·20 claims
- 1889US10847373B2Methods of forming silicide contact in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 24, 2020·3 cites·20 claims
- 1988US12439638B2FET with wrap-around silicide and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 7, 2025·0 cites·20 claims
- 2088US12342587B2Integrated circuit with nanostructure transistors and bottom dielectric insulatorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 24, 2025·1 cites·20 claims
- 2188US12317540B2Method for manufacturing semiconductor structure with isolation featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 27, 2025·1 cites·20 claims
- 2288US11710774B2Method for forming epitaxial source/drain features and semiconductor devices fabricated thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 25, 2023·1 cites·20 claims
- 2388US2025311419A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2487US2025359145A1Semiconductor structure with isolation featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2587US2025359297A1Dielectric liner for field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2686US2025351580A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2785US11929287B2Dielectric liner for field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 12, 2024·1 cites·20 claims
- 2884US12009216B2Methods of forming silicide contact in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 11, 2024·0 cites·20 claims
- 2984US2025324673A1Enlargement of gaa nanostructureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3083US12457798B2Dielectric liner for field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 28, 2025·0 cites·20 claims
- 3183US12369384B2Semiconductor device structure including dielectric region with plurality of different oxidation regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 22, 2025·0 cites·20 claims
- 3283US2025316596A1Semiconductor devices with backside power rail and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3382US12300732B2Gate all around transistor with dual inner spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 13, 2025·0 cites·20 claims
- 3482US12272732B2Method for forming epitaxial source/drain features and semiconductor devices fabricated thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 8, 2025·0 cites·20 claims
- 3582US12009215B2Semiconductor device structure with silicide layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 11, 2024·0 cites·20 claims
- 3682US11121037B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 14, 2021·2 cites·20 claims
- 3782US2025324728A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3881US12446319B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 14, 2025·0 cites·20 claims
- 3981US12446305B2Uniform gate width for nanostructure devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 14, 2025·0 cites·20 claims
- 4081US11996482B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 28, 2024·0 cites·20 claims
- 4181US2025287629A1Semiconductor Devices and Methods of ManufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4281US2025366031A1Method for forming semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4381US2025366139A1Spacer structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4480US11984361B2Multi-gate devices and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 14, 2024·0 cites·20 claims
- 4580US11764065B2Methods of forming silicide contact in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 19, 2023·0 cites·20 claims
- 4680US11205711B2Selective inner spacer implementationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 21, 2021·2 cites·20 claims
- 4780US2025359257A1Spacer structures and contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4880US2025359254A1Field effect transistor with narrowed spacer and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4980US2025359176A1Field effect transistor with isolated source/drains and methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 5079US12107169B2Contact structure for stacked multi-gate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 1, 2024·0 cites·20 claims
Showing the top 50 of 117 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →