Inventor · disambiguated record
Jung-Chien Cheng
Also filed as: CHENG JUNG-CHIEN
26 granted patents·40 pending applications·23 citations·filing 2016–2025
93Inventor score
Top patents by PatentIndex Score
66 records- 0199US11462612B2Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 4, 2022·6 cites·20 claims
- 0298US11527534B2Gap-insulated semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·5 cites·20 claims
- 0397US11996410B2Gap-insulated semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 28, 2024·2 cites·20 claims
- 0497US11855079B2Integrated circuit with backside trench for metal gate definitionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·3 cites·20 claims
- 0596US11855078B2Semiconductor device structure including forksheet transistors and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·2 cites·20 claims
- 0694US12300723B2Transistor including downward extending silicideTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 13, 2025·2 cites·20 claims
- 0794US11710737B2Hybrid semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 25, 2023·2 cites·20 claims
- 0889US11670550B2Nanostructure field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 6, 2023·1 cites·20 claims
- 0987US2025331299A1Gap-insulated semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1086US12402407B2Gap-insulated semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 26, 2025·0 cites·20 claims
- 1185US12376365B2Nanosheet devices with hybrid structures and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 29, 2025·0 cites·20 claims
- 1284US12389643B2Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 12, 2025·0 cites·20 claims
- 1383US2025359284A1Nanosheet Devices With Hybrid Structures And Methods Of Fabricating The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1483US2024387623A1Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1583US2025366008A1Field effect transistor with gate isolation structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1682US2025294867A1Semiconductor device structure including forksheet transistors and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1782US2025366122A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1882US2025366057A1Field effect transistor with isolation structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1982US2025366001A1Semiconductor device and formation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2082US2025366090A1Method for formng semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2181US12324229B2Semiconductor device structure including forksheet transistors and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 3, 2025·0 cites·20 claims
- 2281US12183799B2Semiconductor device with gate isolation features and fabrication method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 31, 2024·0 cites·20 claims
- 2381US12170279B2Hybrid semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 17, 2024·0 cites·20 claims
- 2481US2025359120A1Channel width modulationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2581US2025359214A1Field effect transistor with dual layer isolation structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2681US2025151329A1Semiconductor device with gate isolation features and fabrication method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2781US2025359122A1Semiconductor device with dielectric structure in channel region and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2880US12094950B2Nanostructures and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 17, 2024·0 cites·20 claims
- 2980US2024371960A1Nanostructures and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3079US2024379668A1Hybrid semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3179US2024379750A1Nanostructure Field-Effect Transistor Device and Method of FormingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3277US12302630B2Integrated circuit with backside trench for metal gate definitionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 3377US12125877B2Nanostructure field-effect transistor device with dielectric layer for reducing substrate leakage or well isolation leakage and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 22, 2024·0 cites·20 claims
- 3477US11855138B2Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 3575US12464750B2Semiconductor device and formation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 4, 2025·0 cites·20 claims
- 3675US2025275199A1Semiconductor device structure with isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3774US2025234578A1Semiconductor device with dielectric structure in channel region and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3874US2024371877A1Semiconductor device with gate isolation structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3974US2024395857A1Semiconductor device with wrap around silicide layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4073US12009261B2Nanosheet devices with hybrid structures and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 11, 2024·0 cites·20 claims
- 4172US11538927B2Nanostructures and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 27, 2022·0 cites·20 claims
- 4271US11876119B2Semiconductor device with gate isolation features and fabrication method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 16, 2024·0 cites·20 claims
- 4371US2024332387A1Gate isolation and connection of multigate devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4470US12300719B2Structure and formation method of semiconductor device with isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 13, 2025·0 cites·20 claims
- 4570US12249621B2Semiconductor structure with dielectric fin featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 11, 2025·0 cites·20 claims
- 4670US2025185313A1Method for manufacturing semiconductor structure with dielectric fin structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4770US2024355904A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4870US2023395599A1Semiconductor device structure including forksheet transistors and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4970US2024339531A1Channel width modulationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 5067US2023402536A1Field effect transistor with gate isolation structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
Showing the top 50 of 66 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →