Inventor · disambiguated record
Jung-Dal Choi
Also filed as: CHOI JUNG-DAL
186 granted patents·45 pending applications·3,272 citations·filing 1988–2024
99Inventor score
Top patents by PatentIndex Score
231 records- 0198US7408806B2Memory array architecture for a memory device and method of operating the memory array architectureSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 5, 2008·93 cites·22 claims
- 0298US6061270AMethod for programming a non-volatile memory device with program disturb controlSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted May 9, 2000·271 cites·8 claims
- 0397US7652931B2Nonvolatile memory device with NAND cell stringsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 26, 2010·51 cites·19 claims
- 0497US7480178B2NAND flash memory device having dummy memory cells and methods of operating sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 20, 2009·59 cites·5 claims
- 0597US6858906B2Floating trap non-volatile semiconductor memory devices including high dielectric constant blocking insulating layersSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Feb 22, 2005·174 cites·30 claims
- 0696US8427881B2Semiconductor memory device and programming method thereofJANG JAE HOON·Filed 2010·Granted Apr 23, 2013·53 cites·7 claims
- 0796US7529138B2Flash memory devices, methods of erasing flash memory devices and memory systems including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 5, 2009·55 cites·20 claims
- 0896US5923587AMulti-bit memory cell array of a non-volatile semiconductor memory device and method for driving the sameSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Jul 13, 1999·157 cites·24 claims
- 0995US6774433B2Non-volatile memory device with diffusion layerSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Aug 10, 2004·59 cites·11 claims
- 1095US5936887ANon-volatile memory device with NAND type cell structureSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Aug 10, 1999·141 cites·14 claims
- 1194US8441059B2Memory devices including vertical pillars and methods of manufacturing and operating the sameSIM JAE-SUNG·Filed 2009·Granted May 14, 2013·34 cites·18 claims
- 1293US7924622B2Flash memory device and operating method for concurrently applying different bias voltages to dummy memory cells and regular memory cells during erasureSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Apr 12, 2011·36 cites·11 claims
- 1393US7881114B2NAND flash memory device having dummy memory cells and methods of operating sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 1, 2011·25 cites·14 claims
- 1493US7253467B2Non-volatile semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 7, 2007·61 cites·24 claims
- 1593US6894924B2Operating a non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted May 17, 2005·74 cites·59 claims
- 1692US6370062B2NAND-type flash memory device and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Apr 9, 2002·73 cites·13 claims
- 1792US6246607B1Methods of programming nonvolatile memory cells by floating drain or source regions associated therewithSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jun 12, 2001·67 cites·8 claims
- 1892US5877980ANonvolatile memory device having a program-assist plateSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Mar 2, 1999·91 cites·24 claims
- 1991US8895393B2Memory devices including vertical pillars and methods of manufacturing and operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Nov 25, 2014·9 cites·59 claims
- 2091US8259503B2Semiconductor device having a field effect source/drain regionPARK KI-TAE·Filed 2011·Granted Sep 4, 2012·12 cites·30 claims
- 2191US7804120B2Non-volatile semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 28, 2010·15 cites·23 claims
- 2291US7486554B2NAND flash memory devices having shielding lines between wordlines and selection linesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 3, 2009·15 cites·19 claims
- 2391US7399672B2Methods of forming nonvolatile memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 15, 2008·19 cites·14 claims
- 2491US5734609AIntegrated circuit memory devices having reduced susceptibility to inadvertent programming and erasure and methods of operating sameSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Mar 31, 1998·94 cites·24 claims
- 2590US9564435B2Semiconductor device including FinFETs having different gate structures and method of manufacturing the semiconductor deviceCHUNG EUN-AE·Filed 2015·Granted Feb 7, 2017·16 cites·28 claims
- 2690US8004893B2Integrated circuit memory devices having vertically arranged strings of memory cells therein and methods of operating sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Aug 23, 2011·20 cites·15 claims
- 2790US7492206B2Level shifter with reduced leakage current and block driver for nonvolatile semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 17, 2009·21 cites·12 claims
- 2890US4983860AData output buffer for use in semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1988·Granted Jan 8, 1991·58 cites·20 claims
- 2989US8699274B2Flash memory device and operating method for concurrently applying different bias voltages to dummy memory cells and regular memory cells during erasureSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Apr 15, 2014·9 cites·6 claims
- 3089US7470948B2Memory cell array structures in NAND flash memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 30, 2008·14 cites·42 claims
- 3189US6677200B2Method of forming non-volatile memory having floating trap type deviceSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jan 13, 2004·51 cites·11 claims
- 3289US6093605AMethod of manufacturing a nonvolatile memory device having a program-assist plateSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jul 25, 2000·67 cites·21 claims
- 3388US11545190B2Semiconductor memory deviceSK HYNIX INC·Filed 2019·Granted Jan 3, 2023·6 cites·19 claims
- 3488US8248853B2Methods of programming non-volatile flash memory devices by applying a higher voltage level to a selected word line than to a word line neighboring the selected word lineLEE JAE DUK·Filed 2009·Granted Aug 21, 2012·22 cites·19 claims
- 3588US7872295B2Method of making flash memory cells and peripheral circuits having STI, and flash memory devices and computer systems having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jan 18, 2011·11 cites·27 claims
- 3688US6734065B2Method of forming a non-volatile memory device having a metal-oxide-nitride-oxide-semiconductor gate structureSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 11, 2004·39 cites·8 claims
- 3788US6624464B2Highly integrated non-volatile memory cell array having a high program speedSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Sep 23, 2003·38 cites·8 claims
- 3887US7999307B2Nonvolatile memory device having cell and peripheral regions and method of making the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Aug 16, 2011·7 cites·16 claims
- 3987US7623366B2Semiconductor device having a field effect source/drain regionSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 24, 2009·11 cites·20 claims
- 4087US7391071B2Nonvolatile memory devices with trenched side-wall transistors and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 24, 2008·16 cites·20 claims
- 4187US5990514ANonvolatile semiconductor memory having boosting lines self-aligned with word linesSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Nov 23, 1999·73 cites·9 claims
- 4286US8969947B2Vertical memory devices with quantum-dot charge storage cellsLEE JAE-GOO·Filed 2011·Granted Mar 3, 2015·9 cites·18 claims
- 4386US7776687B2Semiconductor device having a gate contact structure capable of reducing interfacial resistance and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 17, 2010·9 cites·21 claims
- 4486US7247538B2Methods of fabricating floating trap non-volatile semiconductor memory devices including high dielectric constant blocking insulating layersSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 24, 2007·11 cites·13 claims
- 4585US10644026B2Semiconductor device and manufacturing method thereofSK HYNIX INC·Filed 2018·Granted May 5, 2020·6 cites·15 claims
- 4685US9391269B2Variable resistance memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jul 12, 2016·5 cites·17 claims
- 4785US7583540B2Flash memory device and method of programming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 1, 2009·13 cites·20 claims
- 4885US7397093B2Semiconductor devices with sidewall conductive patterns methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 8, 2008·9 cites·14 claims
- 4984US9450025B2Resistive memory device and method of operating resistive memory deviceJUNG SEUNG-JAE·Filed 2015·Granted Sep 20, 2016·5 cites·13 claims
- 5084US8315103B2Flash memory device and operating method for concurrently applying different bias voltages to dummy memory cells and regular memory cells during erasureLEE CHANG-HYUN·Filed 2011·Granted Nov 20, 2012·7 cites·8 claims
Showing the top 50 of 231 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →