Inventor · disambiguated record
Ju-Seon Goo
Also filed as: GOO JU-SEON
17 granted patents·12 pending applications·407 citations·filing 1997–2015
95Inventor score
Top patents by PatentIndex Score
29 records- 0194US6566229B2Method of forming an insulating layer in a trench isolation type semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted May 20, 2003·102 cites·14 claims
- 0289US7674685B2Semiconductor device isolation structures and methods of fabricating such structuresSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 9, 2010·21 cites·32 claims
- 0383US7332409B2Methods of forming trench isolation layers using high density plasma chemical vapor depositionSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 19, 2008·13 cites·13 claims
- 0483US6057251AMethod for forming interlevel dielectric layer in semiconductor device using electron beamsSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted May 2, 2000·67 cites·19 claims
- 0582US7517817B2Method for forming a silicon oxide layer using spin-on glassSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 14, 2009·7 cites·13 claims
- 0682US6489252B2Method of forming a spin-on-glass insulation layerSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Dec 3, 2002·28 cites·11 claims
- 0781US6635586B2Method of forming a spin-on-glass insulation layerSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Oct 21, 2003·27 cites·11 claims
- 0881US5989983AMethod of fabricating and curing spin-on-glass layers by electron beam irradiationSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Nov 23, 1999·64 cites·27 claims
- 0980US7192891B2Method for forming a silicon oxide layer using spin-on glassSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Mar 20, 2007·21 cites·47 claims
- 1078US7842569B2Flash memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 30, 2010·7 cites·18 claims
- 1173US8043914B2Methods of fabricating flash memory devices comprising forming a silicide on exposed upper and side surfaces of a control gateSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 25, 2011·4 cites·15 claims
- 1260US6645879B2Method of forming a silicon oxide layer of a semiconductor device and method of forming a wiring having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Nov 11, 2003·7 cites·26 claims
- 1359US7358190B2Methods of filling gaps by deposition on materials having different deposition ratesSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 15, 2008·6 cites·7 claims
- 1455US6117785AMultiple etch methods for forming contact holes in microelectronic devices including SOG layers and capping layers thereonSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Sep 12, 2000·21 cites·10 claims
- 1547US2009012221A1Compositions including perhydro-polysilazane used in a semiconductor manufacturing processSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 1646US6368906B1Method of planarization using selecting curing of SOG layerSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Apr 9, 2002·12 cites·13 claims
- 1746US2010072569A1Method of forming an isolation layer, method of manufacturing a semiconductor device using the same, and semiconductor device having an isolation layerSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 1845US7781304B2Semiconductor device having trench isolation region and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 24, 2010·0 cites·23 claims
- 1942US2011037109A1Semiconductor devices including lower and upper device isolation patternsSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
- 2041US2007020879A1Method of forming an isolation layer and method of manufacturing a field effect transistor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2140US2006089008A1Methods of manufacturing silicon oxide isolation layers and semiconductor devices that include such isolation layersHONG EUNKEE·Filed 2005·Application pending·0 cites
- 2240US2007004139A1Method of manufacturing a non-volatile semiconductor deviceKIM HONG-GUN·Filed 2006·Application pending·0 cites
- 2339US2012007165A1Semiconductor devicesLEE MYOUNG-BUM·Filed 2011·Application pending·0 cites
- 2438US2008121977A1Semiconductor device and method of manufacturing having the sameCHOI YONG-SOON·Filed 2007·Application pending·0 cites
- 2538US2004169005A1Methods for forming a thin film on an integrated circuit including soft baking a silicon glass filmFiled 2003·Application pending·0 cites
- 2635US2010240194A1Method of fabricating semiconductor deviceJUNG DEOKYOUNG·Filed 2010·Application pending·0 cites
- 2734US2015255302A1Method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Application pending·0 cites
- 2833US2010203700A1Method of forming semiconductor deviceBYUN KYUNGMUN·Filed 2010·Application pending·0 cites
- 2930US8492223B2Methods of manufacturing flash memory devices by selective removal of nitrogen atomsCHOI JONG-WAN·Filed 2011·Granted Jul 23, 2013·0 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →