Inventor · disambiguated record
Jung Han
Also filed as: HAN JUNG · HAN JUNG-DAE
19 granted patents·6 pending applications·309 citations·filing 1998–2023
95Inventor score
Top patents by PatentIndex Score
25 records- 0195US10458038B2Conductivity based on selective etch for GaN devices and applications thereofUNIV YALE·Filed 2015·Granted Oct 29, 2019·13 cites·24 claims
- 0292US9583353B2Lateral electrochemical etching of III-nitride materials for microfabricationUNIV YALE·Filed 2013·Granted Feb 28, 2017·16 cites·35 claims
- 0392US9206524B2Conductivity based on selective etch for GaN devices and applications thereofZHANG YU·Filed 2012·Granted Dec 8, 2015·14 cites·51 claims
- 0492US6599362B2Cantilever epitaxial processSANDIA CORP·Filed 2001·Granted Jul 29, 2003·116 cites·21 claims
- 0591US10896818B2Stacking fault-free semipolar and nonpolar GaN grown on foreign substrates by eliminating the nitrogen polar facets during the growthUNIV YALE·Filed 2017·Granted Jan 19, 2021·7 cites·13 claims
- 0691US9978589B2Nitrogen-polar semipolar and gallium-polar semipolar GaN layers and devices on sapphire substratesUNIV YALE·Filed 2015·Granted May 22, 2018·9 cites·29 claims
- 0791US9978845B2Method of obtaining planar semipolar gallium nitride surfacesUNIV YALE·Filed 2015·Granted May 22, 2018·10 cites·26 claims
- 0890US11043792B2Method for GaN vertical microcavity surface emitting laser (VCSEL)UNIV YALE·Filed 2015·Granted Jun 22, 2021·7 cites·22 claims
- 0989US7407872B2Epitaxial growth of aligned AlGalnN nanowires by metal-organic chemical vapor depositionUNIV YALE·Filed 2005·Granted Aug 5, 2008·18 cites·25 claims
- 1089US6775314B1Distributed bragg reflector using AIGaN/GaNSANDIA CORP·Filed 2001·Granted Aug 10, 2004·44 cites·10 claims
- 1188US11095096B2Method for a GaN vertical microcavity surface emitting laser (VCSEL)UNIV YALE·Filed 2015·Granted Aug 17, 2021·9 cites·30 claims
- 1284US11018231B2Method to make buried, highly conductive p-type III-nitride layersUNIV YALE·Filed 2015·Granted May 25, 2021·4 cites·28 claims
- 1384US8603919B2Method for fabricating semiconductor deviceHAN JUNG-DAE·Filed 2012·Granted Dec 10, 2013·9 cites·20 claims
- 1480US10435812B2Heterogeneous material integration through guided lateral growthUNIV YALE·Filed 2013·Granted Oct 8, 2019·5 cites·21 claims
- 1576US9711352B2Large-area, laterally-grown epitaxial semiconductor layersUNIV YALE·Filed 2014·Granted Jul 18, 2017·4 cites·31 claims
- 1673US10554017B2Method and device concerning III-nitride edge emitting laser diode of high confinement factor with lattice matched cladding layerUNIV YALE·Filed 2016·Granted Feb 4, 2020·2 cites·24 claims
- 1757US2025385487A1Structures for in-situ reflectance measurement during homo-epitaxyUNIV YALE·Filed 2023·Application pending·0 cites
- 1853US2007281481A1Controlled growth of gallium nitride nanostructuresUNIV YALE·Filed 2007·Application pending·0 cites
- 1951US7258807B2Controlled growth of gallium nitride nanostructuresUNIV YALE·Filed 2004·Granted Aug 21, 2007·1 cites·22 claims
- 2050US2024222937A1Multilayer structures made of indium phosphide or gallium arsenideUNIV YALE·Filed 2022·Application pending·0 cites
- 2148US6138607ADevice for automatically preparing and feeding liquid feed stuff for pigletsREPUBLIC OF KOREA REPRESENTED·Filed 1998·Granted Oct 31, 2000·17 cites·4 claims
- 2248US2022356602A1In-situ and selective area etching of surfaces or layers, and high-speed growth of gallium nitride, by organometallic chlorine precursorsUNIV YALE·Filed 2020·Application pending·0 cites
- 2347US2017133826A1Lateral electrochemical etching of iii-nitride materials for microfabricationUNIV YALE·Filed 2017·Application pending·0 cites
- 2446US2020152841A1Nanoporous micro-led devices and methods for makingUNIV YALE·Filed 2018·Application pending·0 cites
- 2525US6406931B1Structural tuning of residual conductivity in highly mismatched III-V layersSANDIA CORP·Filed 1999·Granted Jun 18, 2002·4 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →