Inventor · disambiguated record
Juergen Holz
Also filed as: HOLZ JUERGEN
17 granted patents·6 pending applications·116 citations·filing 2002–2018
93Inventor score
Files withINFINEON TECHNOLOGIES AG12HOLZ JUERGEN3QIMONDA AG3OSRAM OPTO SEMICONDUCTORS GMBH2GSCHWANDTNER ALEXANDER1
Top patents by PatentIndex Score
23 records- 0191US7274060B2Memory cell array and method of forming the sameINFINEON TECHNOLOGIES AG·Filed 2005·Granted Sep 25, 2007·16 cites·19 claims
- 0285US7824993B2Field-effect transistor with local source/drain insulation and associated method of productionINFINEON TECHNOLOGIES AG·Filed 2009·Granted Nov 2, 2010·7 cites·10 claims
- 0384US8629500B2Integrated circuit arrangement comprising a field effect transistor, especially a tunnel field effect transistorHOLZ JUERGEN·Filed 2005·Granted Jan 14, 2014·12 cites·23 claims
- 0482US7875977B2Barrier layers for conductive featuresINFINEON TECHNOLOGIES AG·Filed 2008·Granted Jan 25, 2011·9 cites·20 claims
- 0582US6762066B2Method for fabricating a semiconductor structure using a protective layer, and semiconductor structureINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jul 13, 2004·24 cites·18 claims
- 0679US7449409B2Barrier layer for conductive featuresINFINEON TECHNOLOGIES AG·Filed 2005·Granted Nov 11, 2008·8 cites·17 claims
- 0775US7915713B2Field effect transistors with channels oriented to different crystal planesQIMONDA AG·Filed 2008·Granted Mar 29, 2011·6 cites·15 claims
- 0874US8946617B2Photodiode having a p-n junction with varying expansion of the space charge zone due to application of a variable voltageHOLZ JUERGEN·Filed 2011·Granted Feb 3, 2015·2 cites·17 claims
- 0970US7759768B2Integrated circuit with intergrated capacitor and methods for making sameINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jul 20, 2010·17 cites·43 claims
- 1069US9219063B2Integrated circuit arrangement comprising a field effect transistor, especially a tunnel field effect transistorINFINEON TECHNOLOGIES AG·Filed 2014·Granted Dec 22, 2015·2 cites·20 claims
- 1167US10672749B2Light source comprising a number of semi-conductor componentsOSRAM OLED GMBH·Filed 2016·Granted Jun 2, 2020·1 cites·10 claims
- 1255US10299341B2Lighting device, lighting arrangement comprising lighting device and method for operating a lighting deviceOSRAM OPTO SEMICONDUCTORS GMBH·Filed 2018·Granted May 21, 2019·0 cites·16 claims
- 1355US7005337B2Method for a parallel production of an MOS transistor and a bipolar transistorINFINEON TECHNOLOGIES AG·Filed 2004·Granted Feb 28, 2006·6 cites·20 claims
- 1454US2009269914A1Process for forming a dielectric on a copper-containing metallization and capacitor arrangementINFINEON TECHNOLOGIES AG·Filed 2009·Application pending·0 cites
- 1554US2016118477A1Method of production of field-effect transistor with local source/drain insulationINFINEON TECHNOLOGIES AG·Filed 2015·Application pending·0 cites
- 1652US2007290249A1Integrated Circuit Including a Memory Cell ArrayINFINEON TECHNOLOGIES AG·Filed 2007·Application pending·0 cites
- 1751US9240462B2Field-effect transistor with local source/drain insulation and associated method of productionHOLZ JUERGEN·Filed 2010·Granted Jan 19, 2016·0 cites·8 claims
- 1848US2006252240A1Process for forming a dielectric on a copper-containing metallization and capacitor arrangementGSCHWANDTNER ALEXANDER·Filed 2006·Application pending·0 cites
- 1946US9991428B2Optoelectronic component and method for the production thereofOSRAM OPTO SEMICONDUCTORS GMBH·Filed 2013·Granted Jun 5, 2018·0 cites·15 claims
- 2043US7015567B2Method for fabricating a semiconductor structure using a protective layer, and semiconductor structureINFINEON TECHNOLOGIES AG·Filed 2004·Granted Mar 21, 2006·0 cites·13 claims
- 2142US2009179262A1Floating Body Memory Cell with a Non-Overlapping Gate ElectrodeQIMONDA AG·Filed 2008·Application pending·0 cites
- 2239US2008283910A1Integrated circuit and method of forming an integrated circuitQIMONDA AG·Filed 2007·Application pending·0 cites
- 2338USD672463SRectoscope with a tube insertSAAD STEFAN·Filed 2012·Granted Dec 11, 2012·6 cites·1 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →