Inventor · disambiguated record
Jun Hu
Also filed as: HU JUN · HU JUN-LIANG
48 granted patents·6 pending applications·277 citations·filing 2004–2023
98Inventor score
Files withALPHA & OMEGA SEMICONDUCTOR15HU JUN8SHANGHAI HUAHONG NEC ELECT CO7CHIU TZUYIN3HAMILTON SUNDSTRAND CORP3
Top patents by PatentIndex Score
54 records- 0196US8575685B2Buried field ring field effect transistor (BUF-FET) integrated with cells implanted with hole supply pathBOBDE MADHUR·Filed 2011·Granted Nov 5, 2013·22 cites·19 claims
- 0295US8785279B2High voltage field balance metal oxide field effect transistor (FBM)BHALLA ANUP·Filed 2012·Granted Jul 22, 2014·18 cites·18 claims
- 0395US8698196B2Low capacitance transient voltage suppressor (TVS) with reduced clamping voltageGUAN LINGPENG·Filed 2011·Granted Apr 15, 2014·29 cites·10 claims
- 0494US9129822B2High voltage field balance metal oxide field effect transistor (FBM)ALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Sep 8, 2015·12 cites·12 claims
- 0594US8896131B2Cascode scheme for improved device switching behaviorBHALLA ANUP·Filed 2011·Granted Nov 25, 2014·20 cites·23 claims
- 0694US8710585B1High voltage fast recovery trench diodeHU JUN·Filed 2013·Granted Apr 29, 2014·16 cites·21 claims
- 0791US9318587B2Injection control in semiconductor power devicesALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Apr 19, 2016·9 cites·24 claims
- 0890US9620630B2Injection control in semiconductor power devicesALPHA & OMEGA SEMICONDUCTOR·Filed 2016·Granted Apr 11, 2017·5 cites·30 claims
- 0990US8907414B2High voltage fast recovery trench diodeALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Dec 9, 2014·8 cites·21 claims
- 1089US9865678B2High voltage field balance metal oxide field effect transistor (FBM)ALPHA & OMEGA SEMICONDUCTOR·Filed 2016·Granted Jan 9, 2018·4 cites·9 claims
- 1187US7577545B2Method and system for estimating rotor angular position and rotor angular velocity at low speeds or standstillHAMILTON SUNDSTRAND CORP·Filed 2007·Granted Aug 18, 2009·21 cites·14 claims
- 1285US9000481B2Low capacitance transient voltage suppressor (TVS) with reduced clamping voltageALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Apr 7, 2015·5 cites·17 claims
- 1384US9048282B2Dual-gate trench IGBT with buried floating P-type shieldHU JUN·Filed 2013·Granted Jun 2, 2015·7 cites·12 claims
- 1484US7072790B2Shaft sensorless angular position and velocity estimation for a dynamoelectric machine based on extended rotor fluxHAMILTON SUNDSTRAND CORP·Filed 2004·Granted Jul 4, 2006·34 cites·26 claims
- 1581US9450083B2High voltage field balance metal oxide field effect transistor (FBM)ALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted Sep 20, 2016·2 cites·21 claims
- 1681US8421185B2Parasitic vertical PNP bipolar transistor in BiCMOS processCHIU TZUYIN·Filed 2010·Granted Apr 16, 2013·7 cites·2 claims
- 1779US9160264B2Initial rotor position detection and start-up system for a dynamoelectric machineHU JUN·Filed 2007·Granted Oct 13, 2015·12 cites·19 claims
- 1879US8822300B2Low capacitance transient voltage suppressor (TVS) with reduced clamping voltageALPHA & OMEGA SEMICONDUCTOR·Filed 2014·Granted Sep 2, 2014·3 cites·7 claims
- 1976US10038089B2SGT MOSFET with adjustable CRSS and CISSHU JUN·Filed 2015·Granted Jul 31, 2018·2 cites·10 claims
- 2075US9123770B2Charge reservoir IGBT top structureALPHA & OMEGA SEMICONDUCTOR·Filed 2013·Granted Sep 1, 2015·3 cites·15 claims
- 2175US8420475B2Parasitic vertical PNP bipolar transistor and its fabrication method in BiCMOS processCHIU TZUYIN·Filed 2010·Granted Apr 16, 2013·5 cites·4 claims
- 2272US7952896B2Power conversion architecture with zero common mode voltageHAMILTON SUNDSTRAND CORP·Filed 2008·Granted May 31, 2011·10 cites·16 claims
- 2366US9502547B2Charge reservoir IGBT top structureALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted Nov 22, 2016·1 cites·12 claims
- 2465US8759880B2Ultra-high voltage SIGE HBT device and manufacturing method of the sameSHANGHAI HUAHONG NEC ELECT CO·Filed 2013·Granted Jun 24, 2014·2 cites·13 claims
- 2565US8748238B2Ultra high voltage SiGe HBT and manufacturing method thereofSHANGHAI HUAHONG NEC ELECT CO·Filed 2012·Granted Jun 10, 2014·2 cites·11 claims
- 2665US7042728B2Clamping structure and heat dissipating module using sameMOLEX INC·Filed 2004·Granted May 9, 2006·12 cites·12 claims
- 2764US8637959B2Vertical parasitic PNP device in a BiCMOS process and manufacturing method of the sameQIAN WENSHENG·Filed 2011·Granted Jan 28, 2014·2 cites·8 claims
- 2863US8674480B2High voltage bipolar transistor with pseudo buried layersCHIU TZUYIN·Filed 2010·Granted Mar 18, 2014·2 cites·9 claims
- 2962US10998264B2Dual-gate trench IGBT with buried floating P-type shieldALPHA & OMEGA SEMICONDUCTOR·Filed 2020·Granted May 4, 2021·0 cites·20 claims
- 3062US10804355B2Dual-gate trench IGBT with buried floating P-type shieldALPHA & OMEGA SEMICONDUCTOR·Filed 2019·Granted Oct 13, 2020·0 cites·17 claims
- 3162US9293559B2Dual trench-gate IGBT structureALPHA & OMEGA SEMICONDUCTOR·Filed 2013·Granted Mar 22, 2016·1 cites·12 claims
- 3260US2025197281A1Low-carbon production method and system for cement clinkerUNIV EAST CHINA SCIENCE & TECH·Filed 2023·Application pending·0 cites
- 3359US11482601B2Methods of manufacture of termination for vertical trench shielded devicesSILICONIX INCORPORATED·Filed 2021·Granted Oct 25, 2022·0 cites·15 claims
- 3458US10199455B2Dual-gate trench IGBT with buried floating P-type shieldHU JUN·Filed 2017·Granted Feb 5, 2019·0 cites·28 claims
- 3557US10950699B2Termination for vertical trench shielded devicesSILICONIX INCORPORATED·Filed 2019·Granted Mar 16, 2021·0 cites·22 claims
- 3657US8598678B2Parasitic vertical PNP bipolar transistor and its fabrication method in BiCMOS processQIAN WENSHENG·Filed 2010·Granted Dec 3, 2013·1 cites·12 claims
- 3754US9666666B2Dual-gate trench IGBT with buried floating P-type shieldALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted May 30, 2017·0 cites·16 claims
- 3849US10923588B2SGT MOSFET with adjustable CRSS and CISSHUNTECK SEMICONDUCTOR SHANGHAI CO LTD·Filed 2018·Granted Feb 16, 2021·0 cites·10 claims
- 3949US9711631B2Dual trench-gate IGBT structureALPHA & OMEGA SEMICONDUCTOR·Filed 2016·Granted Jul 18, 2017·0 cites·12 claims
- 4049US2024030339A1Termination structureSILICONIX INCORPORATED·Filed 2022·Application pending·0 cites
- 4146US8779473B2SiGe HBT device and manufacturing method of the sameSHANGHAI HUAHONG NEC ELECT CO·Filed 2013·Granted Jul 15, 2014·0 cites·9 claims
- 4245US10622445B2Epitaxial structure of trench MOSFET devicesHUNTECK SEMICONDUCTOR SHANGHAI CO LTD·Filed 2018·Granted Apr 14, 2020·0 cites·17 claims
- 4343US8785977B2High speed SiGe HBT and manufacturing method thereofSHANGHAI HUAHONG NEC ELECT CO·Filed 2012·Granted Jul 22, 2014·0 cites·11 claims
- 4442US10896959B2Top structure of super junction MOSFETs and methods of fabricationHU JUN·Filed 2016·Granted Jan 19, 2021·0 cites·5 claims
- 4541US9012279B2SiGe HBT and method of manufacturing the sameLIU DONGHUA·Filed 2012·Granted Apr 21, 2015·0 cites·10 claims
- 4641US8866189B2Silicon-germanium heterojunction bipolar transistor and manufacturing method thereofSHANGHAI HUAHONG NEC ELECT CO·Filed 2012·Granted Oct 21, 2014·0 cites·16 claims
- 4740US8829650B2Zener diode in a SiGe BiCMOS process and method of fabricating the sameSHANGHAI HUAHONG NEC ELECT CO·Filed 2013·Granted Sep 9, 2014·0 cites·9 claims
- 4840US8042605B2Heat conduction deviceMOLEX INC·Filed 2004·Granted Oct 25, 2011·0 cites·16 claims
- 4940US2013196491A1Method of preventing dopant from diffusing into atmosphere in a bicmos processSHANGHAI HUAHONG NEC ELECT CO·Filed 2013·Application pending·0 cites
- 5039US2019334019A1Top structure of insulated gate bipolar transistor (igbt) with improved injection enhancementHUNTECK SEMICONDUCTOR SHANGHAI CO LTD·Filed 2019·Application pending·0 cites
Showing the top 50 of 54 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →