Inventor · disambiguated record
Ju-Li Huang
Also filed as: HUANG JU-LI
22 granted patents·5 pending applications·82 citations·filing 2014–2025
93Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD27
Top patents by PatentIndex Score
27 records- 0196US9761684B2Method and structure for metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 12, 2017·26 cites·20 claims
- 0295US9431304B2Method and structure for metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 30, 2016·28 cites·20 claims
- 0394US10283417B1Self-protective layer formed on high-k dielectric layers with different materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 7, 2019·10 cites·20 claims
- 0494US10170317B1Self-protective layer formed on high-k dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 1, 2019·7 cites·20 claims
- 0591US10490410B2Self-protective layer formed on high-K dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 26, 2019·4 cites·20 claims
- 0687US12362229B2Semiconductor device structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 0784US12376326B2Gate resistance improvement and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 29, 2025·0 cites·20 claims
- 0884US10529629B2Methods of forming metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 7, 2020·3 cites·20 claims
- 0984US10361133B2High-K metal gate and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 23, 2019·3 cites·20 claims
- 1083US2024203740A1Self-protective layer formed on high-k dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1180US12027415B2Semiconductor device structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 2, 2024·0 cites·20 claims
- 1277US12015077B2Metal gate using monolayersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 18, 2024·0 cites·20 claims
- 1376US2025241001A1Gate resistance improvement and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1475US11810978B2Gate resistance improvement and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 7, 2023·0 cites·20 claims
- 1573US11923201B2Self-protective layer formed on high-K dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 5, 2024·0 cites·20 claims
- 1672US11476156B2Semiconductor device structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 18, 2022·0 cites·20 claims
- 1770US11257924B2Metal gate using monolayersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 22, 2022·0 cites·20 claims
- 1870US11114347B2Self-protective layer formed on high-k dielectric layers with different materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 7, 2021·1 cites·20 claims
- 1967US10937656B2Self-protective layer formed on high-k dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 2, 2021·0 cites·20 claims
- 2064US11031500B2Gate resistance improvement and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 8, 2021·0 cites·20 claims
- 2162US11295990B2Methods of forming metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 5, 2022·0 cites·20 claims
- 2262US10755970B2Semiconductor device structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 25, 2020·0 cites·20 claims
- 2361US11031302B2High-k metal gate and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 8, 2021·0 cites·20 claims
- 2460US10541317B2Method of forming a metal gate using monolayersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 21, 2020·0 cites·20 claims
- 2558US2025142893A1Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2656US2024429281A1Metal gates for semiconductor devices and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2756US2025040200A1Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →