Inventor · disambiguated record
Jun Sung Kang
Also filed as: KANG JUN SUNG
17 granted patents·1 pending application·21 citations·filing 2015–2025
89Inventor score
Files withINTEL CORP18
Top patents by PatentIndex Score
18 records- 0195US11929396B2Cavity spacer for nanowire transistorsINTEL CORP·Filed 2022·Granted Mar 12, 2024·2 cites·20 claims
- 0293US11342411B2Cavity spacer for nanowire transistorsINTEL CORP·Filed 2018·Granted May 24, 2022·7 cites·18 claims
- 0386US11404578B2Dielectric isolation layer between a nanowire transistor and a substrateINTEL CORP·Filed 2018·Granted Aug 2, 2022·3 cites·18 claims
- 0484US10672868B2Methods of forming self aligned spacers for nanowire device structuresINTEL CORP·Filed 2015·Granted Jun 2, 2020·4 cites·21 claims
- 0583US12328905B2Cavity spacer for nanowire transistorsINTEL CORP·Filed 2024·Granted Jun 10, 2025·0 cites·20 claims
- 0682US2025280567A1Cavity spacer for nanowire transistorsINTEL CORP·Filed 2025·Application pending·0 cites
- 0780US12453115B2Nanowire transistor structure and method of shapingINTEL CORP·Filed 2023·Granted Oct 21, 2025·0 cites·17 claims
- 0880US12349394B2Dielectric isolation layer between a nanowire transistor and a substrateINTEL CORP·Filed 2024·Granted Jul 1, 2025·0 cites·21 claims
- 0979US11205715B2Self-aligned nanowireINTEL CORP·Filed 2017·Granted Dec 21, 2021·2 cites·19 claims
- 1078US11869891B2Non-planar integrated circuit structures having mitigated source or drain etch from replacement gate processINTEL CORP·Filed 2018·Granted Jan 9, 2024·2 cites·6 claims
- 1176US12302632B2Non-planar integrated circuit structures having mitigated source or drain etch from replacement gate processINTEL CORP·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 1273US11901458B2Dielectric isolation layer between a nanowire transistor and a substrateINTEL CORP·Filed 2022·Granted Feb 13, 2024·0 cites·22 claims
- 1369US11715787B2Self-aligned nanowireINTEL CORP·Filed 2021·Granted Aug 1, 2023·0 cites·20 claims
- 1469US11069795B2Transistors with channel and sub-channel regions with distinct compositions and dimensionsINTEL CORP·Filed 2017·Granted Jul 20, 2021·1 cites·20 claims
- 1557US11869973B2Nanowire transistor structure and method of shapingINTEL CORP·Filed 2018·Granted Jan 9, 2024·0 cites·15 claims
- 1648US10944006B2Geometry tuning of fin based transistorINTEL CORP·Filed 2016·Granted Mar 9, 2021·0 cites·21 claims
- 1744US11276691B2Gate-all-around integrated circuit structures having self-aligned source or drain undercut for varied widthsINTEL CORP·Filed 2018·Granted Mar 15, 2022·0 cites·21 claims
- 1844US10516021B2Reduced leakage transistors with germanium-rich channel regionsINTEL CORP·Filed 2015·Granted Dec 24, 2019·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →