Inventor · disambiguated record
Jung Pill Kim
Also filed as: KIM JUNG P · KIM JUNG PILL
153 granted patents·14 pending applications·1,562 citations·filing 1990–2024
99Inventor score
Files withQUALCOMM INC86INFINEON TECHNOLOGIES AG18KIM JUNG PILL17HYUNDAI ELECTRONICS IND9JUNG SEONG-OOK5
Top patents by PatentIndex Score
167 records- 0198US9455013B2System and method to trim reference levels in a resistive memoryQUALCOMM INC·Filed 2016·Granted Sep 27, 2016·52 cites·30 claims
- 0298US9140747B2Sense amplifier offset voltage reductionQUALCOMM INC·Filed 2013·Granted Sep 22, 2015·54 cites·27 claims
- 0397US10060880B2Magnetoresistive (MR) sensors employing dual MR devices for differential MR sensingQUALCOMM INC·Filed 2016·Granted Aug 28, 2018·13 cites·23 claims
- 0497US8867258B2Memory cell that includes multiple non-volatile memoriesQUALCOMM INC·Filed 2012·Granted Oct 21, 2014·34 cites·39 claims
- 0597US7046060B1Method and apparatus compensating for frequency drift in a delay locked loopINFINEON TECHNOLOGIES AG·Filed 2004·Granted May 16, 2006·87 cites·40 claims
- 0696US9852783B1Metal-oxide semiconductor (MOS) transistor offset-cancelling (OC), zero-sensing (ZS) dead zone, current-latched sense amplifiers (SAs) (CLSAs) (OCZS-SAs) for sensing differential voltagesQUALCOMM TECHNOLOGIES INC·Filed 2016·Granted Dec 26, 2017·31 cites·30 claims
- 0796US9472261B1Systems and methods to refresh DRAM based on temperature and based on calibration dataQUALCOMM INC·Filed 2015·Granted Oct 18, 2016·25 cites·20 claims
- 0896US9378781B1System, apparatus, and method for sense amplifiersQUALCOMM INC·Filed 2015·Granted Jun 28, 2016·25 cites·26 claims
- 0996US9299457B2Kernel masking of DRAM defectsQUALCOMM INC·Filed 2014·Granted Mar 29, 2016·47 cites·36 claims
- 1095US9728259B1Non-volatile (NV)-content addressable memory (CAM) (NV-CAM) cells employing differential magnetic tunnel junction (MTJ) sensing for increased sense marginQUALCOMM TECHNOLOGIES INC·Filed 2016·Granted Aug 8, 2017·21 cites·30 claims
- 1195US9245610B2OTP cell with reversed MTJ connectionKIM JUNG PILL·Filed 2012·Granted Jan 26, 2016·18 cites·10 claims
- 1293US9870811B2Physically unclonable function based on comparison of MTJ resistancesQUALCOMM INC·Filed 2016·Granted Jan 16, 2018·10 cites·15 claims
- 1393US9251881B2System and method to trim reference levels in a resistive memoryQUALCOMM INC·Filed 2013·Granted Feb 2, 2016·14 cites·37 claims
- 1493US8587994B2System and method for shared sensing MRAMKIM JUNG PILL·Filed 2011·Granted Nov 19, 2013·19 cites·40 claims
- 1593US8547736B2Generating a non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junctionRAO HARI M·Filed 2010·Granted Oct 1, 2013·19 cites·25 claims
- 1692US10319425B1Offset-cancellation sensing circuit (OCSC)-based non-volatile (NV) memory circuitsQUALCOMM INC·Filed 2018·Granted Jun 11, 2019·15 cites·26 claims
- 1792US6934645B2Temperature sensor schemeINFINEON TECHNOLOGIES AG·Filed 2003·Granted Aug 23, 2005·59 cites·20 claims
- 1891US9800271B2Error correction and decodingQUALCOMM INC·Filed 2015·Granted Oct 24, 2017·8 cites·27 claims
- 1991US9401226B1MRAM initialization devices and methodsQUALCOMM INC·Filed 2015·Granted Jul 26, 2016·11 cites·30 claims
- 2091US9275714B1Read operation of MRAM using a dummy word lineQUALCOMM INC·Filed 2014·Granted Mar 1, 2016·13 cites·21 claims
- 2191US8320167B2Programmable write driver for STT-MRAMRAO HARI M·Filed 2010·Granted Nov 27, 2012·15 cites·32 claims
- 2291US7266031B2Internal voltage generator with temperature controlINFINEON TECHNOLOGIES AG·Filed 2003·Granted Sep 4, 2007·66 cites·21 claims
- 2390US9666259B1Dual mode sensing schemeQUALCOMM INC·Filed 2016·Granted May 30, 2017·11 cites·30 claims
- 2490US9147457B2Reference cell repair schemeKIM JUNG PILL·Filed 2012·Granted Sep 29, 2015·13 cites·17 claims
- 2590US8923044B2MTP MTJ deviceLI XIA·Filed 2012·Granted Dec 30, 2014·13 cites·31 claims
- 2690US8493134B2Method and apparatus to provide a clock signal to a charge pumpHAO WUYANG·Filed 2010·Granted Jul 23, 2013·19 cites·44 claims
- 2790US8441850B2Magnetic random access memory (MRAM) layout with uniform patternLEE KANGHO·Filed 2010·Granted May 14, 2013·12 cites·25 claims
- 2890US7694196B2Self-diagnostic scheme for detecting errorsQIMONDA NORTH AMERICA CORP·Filed 2007·Granted Apr 6, 2010·21 cites·20 claims
- 2990US7009904B2Back-bias voltage generator with temperature controlINFINEON TECHNOLOGIES AG·Filed 2003·Granted Mar 7, 2006·53 cites·28 claims
- 3089US10115444B1Data bit inversion tracking in cache memory to reduce data bits written for write operationsQUALCOMM INC·Filed 2017·Granted Oct 30, 2018·9 cites·31 claims
- 3189US9911485B2Method and apparatus for refreshing a memory cellQUALCOMM INC·Filed 2014·Granted Mar 6, 2018·13 cites·30 claims
- 3289US9583171B2Write driver circuits for resistive random access memory (RAM) arraysQUALCOMM INC·Filed 2015·Granted Feb 28, 2017·10 cites·26 claims
- 3389US8446753B2Reference cell write operations at a memoryKIM JUNG PILL·Filed 2010·Granted May 21, 2013·13 cites·40 claims
- 3488US9633706B1Voltage self-boosting circuit for generating a boosted voltage for driving a word line write in a memory array for a memory write operationQUALCOMM INC·Filed 2016·Granted Apr 25, 2017·9 cites·23 claims
- 3588US9507675B2Systems and methods for recovering from uncorrected DRAM bit errorsQUALCOMM INC·Filed 2014·Granted Nov 29, 2016·12 cites·36 claims
- 3688US8614912B2Magnetic random access memory (MRAM)layout with uniform patternQUALCOMM INC·Filed 2013·Granted Dec 24, 2013·9 cites·23 claims
- 3788US8576617B2Circuit and method for generating a reference level for a magnetic random access memory elementZHU XIAOCHUN·Filed 2011·Granted Nov 5, 2013·11 cites·41 claims
- 3888US8406072B2System and method of reference cell testingKIM JUNG PILL·Filed 2010·Granted Mar 26, 2013·10 cites·19 claims
- 3986US10613756B2Hardware-accelerated storage compressionQUALCOMM INC·Filed 2016·Granted Apr 7, 2020·5 cites·29 claims
- 4086US9165631B2OTP scheme with multiple magnetic tunnel junction devices in a cellKIM JUNG PILL·Filed 2012·Granted Oct 20, 2015·10 cites·13 claims
- 4186US8625338B2Asymmetric write scheme for magnetic bit cell elementsZHU XIAOCHUN·Filed 2010·Granted Jan 7, 2014·9 cites·24 claims
- 4285US9812222B2Method and apparatus for in-system management and repair of semi-conductor memory failureQUALCOMM INC·Filed 2015·Granted Nov 7, 2017·5 cites·30 claims
- 4385US7882324B2Method and apparatus for synchronizing memory enabled systems with master-slave architectureQIMONDA AG·Filed 2007·Granted Feb 1, 2011·16 cites·25 claims
- 4484US9196337B2Low sensing current non-volatile flip-flopJUNG SEONG-OOK·Filed 2012·Granted Nov 24, 2015·10 cites·8 claims
- 4584US8406064B2Latching circuitJUNG SEONG-OOK·Filed 2010·Granted Mar 26, 2013·8 cites·20 claims
- 4684US7975170B2Memory refresh system and methodQIMONDA AG·Filed 2007·Granted Jul 5, 2011·16 cites·19 claims
- 4784US7221204B2Duty cycle correctorINFINEON TECHNOLOGIES AG·Filed 2005·Granted May 22, 2007·13 cites·23 claims
- 4883US9390779B2System and method of sensing a memory cellQUALCOMM INC·Filed 2013·Granted Jul 12, 2016·8 cites·38 claims
- 4983US8587982B2Non-volatile memory array configurable for high performance and high densityKIM JUNG PILL·Filed 2011·Granted Nov 19, 2013·7 cites·12 claims
- 5083US7304517B2Duty cycle correctorINFINEON TECHNOLOGIES AG·Filed 2006·Granted Dec 4, 2007·10 cites·7 claims
Showing the top 50 of 167 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →