Inventor · disambiguated record
Ju-Youn Kim
Also filed as: KIM JU Y · KIM JU YOUN
97 granted patents·32 pending applications·498 citations·filing 2004–2024
99Inventor score
Files withSAMSUNG ELECTRONICS CO LTD101KIM JU-YOUN19TSENG WEI-HSIUNG2JEON HYEONG-TAG1JUNG HYUNG-SUK1
Top patents by PatentIndex Score
129 records- 0199US9502416B1Semiconductor device including transistors having different threshold voltagesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 22, 2016·80 cites·20 claims
- 0297US9240411B1Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jan 19, 2016·14 cites·30 claims
- 0396US9698264B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 4, 2017·12 cites·19 claims
- 0496US9564369B1Methods of manufacturing semiconductor devices including device isolation processesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 7, 2017·66 cites·20 claims
- 0596US9515182B2High-integration semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Dec 6, 2016·11 cites·29 claims
- 0696US9461173B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Oct 4, 2016·10 cites·20 claims
- 0796US9087886B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 21, 2015·22 cites·10 claims
- 0896US9048219B2High integration semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jun 2, 2015·20 cites·30 claims
- 0995US10431583B2Semiconductor device including transistors with adjusted threshold voltagesSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 1, 2019·12 cites·15 claims
- 1095US9502417B2Semiconductor device having a substrate including a first active region and a second active regionSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 22, 2016·8 cites·30 claims
- 1195US8969878B2Semiconductor device and method for manufacturing the deviceKIM JU-YOUN·Filed 2013·Granted Mar 3, 2015·19 cites·17 claims
- 1294US11101269B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 24, 2021·4 cites·20 claims
- 1394US10084088B2Method for fabricating a semiconductor device having a first fin active pattern and a second fin active patternSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 25, 2018·7 cites·17 claims
- 1494US9287181B2Semiconductor device and method for fabricating the sameTSENG WEI-HSIUNG·Filed 2015·Granted Mar 15, 2016·16 cites·26 claims
- 1593US10068904B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 4, 2018·10 cites·13 claims
- 1692US11784186B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 10, 2023·2 cites·20 claims
- 1792US10431673B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 1, 2019·8 cites·20 claims
- 1892US9646967B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 9, 2017·8 cites·20 claims
- 1991US11462613B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 4, 2022·3 cites·19 claims
- 2091US9614035B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 4, 2017·8 cites·20 claims
- 2191US9209184B2High-integration semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Dec 8, 2015·5 cites·20 claims
- 2290US9634118B2Methods of forming semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 25, 2017·6 cites·20 claims
- 2389US8987826B2Method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Mar 24, 2015·7 cites·16 claims
- 2488US11380687B2Semiconductor devices including diffusion break regionsSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jul 5, 2022·2 cites·10 claims
- 2588US9305922B2Method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Apr 5, 2016·4 cites·20 claims
- 2687US9349731B2Method for manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted May 24, 2016·7 cites·17 claims
- 2787US9324716B2Semiconductor device and fabricating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Apr 26, 2016·9 cites·19 claims
- 2886US10910376B2Semiconductor devices including diffusion break regionsSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 2, 2021·4 cites·18 claims
- 2986US10068901B2Semiconductor device including transistors with different threshold voltagesSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 4, 2018·3 cites·20 claims
- 3086US9064732B2Semiconductor device including work function control film patterns and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jun 23, 2015·9 cites·14 claims
- 3186US8772146B2Semiconductor device and method for fabricating the sameKIM JU-YOUN·Filed 2012·Granted Jul 8, 2014·8 cites·9 claims
- 3286US2025126882A1Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3385US9640534B2Semiconductor device having high-k film and metal gateSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 2, 2017·4 cites·20 claims
- 3485US9478551B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Oct 25, 2016·7 cites·20 claims
- 3585US8772165B2Methods of manufacturing gates for preventing shorts between the gates and self-aligned contacts and semiconductor devices having the sameKIM JU YOUN·Filed 2011·Granted Jul 8, 2014·10 cites·24 claims
- 3684US9721952B2Semiconductor devices having gate patterns in trenches with widened openingsKIM JU-YOUN·Filed 2016·Granted Aug 1, 2017·4 cites·19 claims
- 3784US9214349B2Method for manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Dec 15, 2015·7 cites·13 claims
- 3882US10804265B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Oct 13, 2020·2 cites·20 claims
- 3982US9536878B2Semiconductor devices and fabricating methods thereofKIM JU-YOUN·Filed 2014·Granted Jan 3, 2017·4 cites·23 claims
- 4082US9000564B2Precision polysilicon resistorsST MICROELECTRONICS INC·Filed 2012·Granted Apr 7, 2015·6 cites·20 claims
- 4182US8685827B2Method of forming polysilicon resistor during replacement metal gate process and semiconductor device having sameKIM JU YOUN·Filed 2011·Granted Apr 1, 2014·8 cites·24 claims
- 4281US12183734B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 31, 2024·0 cites·20 claims
- 4381US10692781B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 23, 2020·3 cites·18 claims
- 4481US10014208B2Semiconductor device having a device isolation layerSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jul 3, 2018·3 cites·19 claims
- 4581US9831244B2Method for manufacturing a semiconductor deviceKIM JU-YOUN·Filed 2015·Granted Nov 28, 2017·3 cites·20 claims
- 4681US9553094B2Semiconductor device and method for fabricating the sameTSENG WEI-HSIUNG·Filed 2016·Granted Jan 24, 2017·3 cites·12 claims
- 4780US9589957B2Method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Mar 7, 2017·2 cites·20 claims
- 4879US10847427B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Nov 24, 2020·2 cites·20 claims
- 4976US12414364B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Sep 9, 2025·0 cites·11 claims
- 5076US11355492B2Semiconductor device with chamfered upper portions of work function layerSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 7, 2022·1 cites·9 claims
Showing the top 50 of 129 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →