Inventor · disambiguated record
Jung-Bae Lee
Also filed as: LEE JUNG-BAE
130 granted patents·10 pending applications·2,812 citations·filing 1996–2020
99Inventor score
Top patents by PatentIndex Score
140 records- 0199US8050332B2System and method for selectively performing single-ended and differential signalingSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 1, 2011·125 cites·21 claims
- 0297US8174921B2Semiconductor memory device having shared temperature control circuitKIM HO-YOUNG·Filed 2009·Granted May 8, 2012·79 cites·10 claims
- 0397US6650594B1Device and method for selecting power down exitSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Nov 18, 2003·155 cites·23 claims
- 0496US7830692B2Multi-chip memory device with stacked memory chips, method of stacking memory chips, and method of controlling operation of multi-chip package memorySAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 9, 2010·41 cites·22 claims
- 0596US7269043B2Memory module and impedance calibration method of semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 11, 2007·57 cites·8 claims
- 0696US7085336B2Signal transmission circuit and method for equalizing disparate delay times dynamically, and data latch circuit of semiconductor device implementing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Aug 1, 2006·82 cites·29 claims
- 0796US6819602B2Multimode data buffer and method for controlling propagation delay timeSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Nov 16, 2004·101 cites·29 claims
- 0896US6466071B2Methods and circuits for correcting a duty-cycle of a signalSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Oct 15, 2002·79 cites·30 claims
- 0996US6262938B1Synchronous DRAM having posted CAS latency and method for controlling CAS latencySAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jul 17, 2001·135 cites·24 claims
- 1096US6151271AIntegrated circuit memory devices having data selection circuits therein which are compatible with single and dual rate mode operation and methods of operating sameSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Nov 21, 2000·134 cites·20 claims
- 1196US6078546ASynchronous semiconductor memory device with double data rate schemeSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jun 20, 2000·155 cites·16 claims
- 1295US7999367B2Stacked memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 16, 2011·42 cites·13 claims
- 1395US6636446B2Semiconductor memory device having write latency operation and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Oct 21, 2003·100 cites·23 claims
- 1495US6373913B1Internal clock signal generator including circuit for accurately synchronizing internal clock signal with external clock signalSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Apr 16, 2002·117 cites·16 claims
- 1594US6678860B1Integrated circuit memory devices having error checking and correction circuits therein and methods of operating sameSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jan 13, 2004·88 cites·2 claims
- 1694US6240039B1Semiconductor memory device and driving signal generator thereforSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted May 29, 2001·99 cites·20 claims
- 1793US9076548B1Semiconductor memory device including refresh control circuit and method of refreshing the samePARK DUK-HA·Filed 2013·Granted Jul 7, 2015·22 cites·20 claims
- 1893US7164615B2Semiconductor memory device performing auto refresh in the self refresh modeSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 16, 2007·48 cites·42 claims
- 1992US9147461B1Semiconductor memory device performing a refresh operation, and memory system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Sep 29, 2015·14 cites·13 claims
- 2091US8799730B2Semiconductor devices and semiconductor packagesOH CHI-SUNG·Filed 2012·Granted Aug 5, 2014·13 cites·22 claims
- 2191US7034565B2On-die termination circuit and method for reducing on-chip DC current, and memory system including memory device having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 25, 2006·61 cites·20 claims
- 2291US6728162B2Data input circuit and method for synchronous semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Apr 27, 2004·55 cites·21 claims
- 2390US9235466B2Memory devices with selective error correction codeSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jan 12, 2016·14 cites·20 claims
- 2488US8396682B2Semiconductor deviceOH CHI-SUNG·Filed 2010·Granted Mar 12, 2013·8 cites·20 claims
- 2587US9130557B2Operating method of input/output interfaceCHO YOUNG CHUL·Filed 2013·Granted Sep 8, 2015·6 cites·19 claims
- 2687US7990171B2Stacked semiconductor apparatus with configurable vertical I/OSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 2, 2011·14 cites·9 claims
- 2787US7930492B2Memory system having low power consumptionSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Apr 19, 2011·18 cites·24 claims
- 2887USD628077SCosmetic caseLEE JUNG BAE·Filed 2009·Granted Nov 30, 2010·34 cites·1 claims
- 2987US7586546B2Video signal processing circuit having a bypass mode and display apparatus comprising the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 8, 2009·10 cites·13 claims
- 3087US6477107B1Integrated circuit memory devices having data selection circuits therein which are compatible with single and dual data rate mode operation and methods of operating sameSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Nov 5, 2002·39 cites·21 claims
- 3186USRE49506EHigh/low speed mode selection for output driver circuits of a memory interfaceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Apr 25, 2023·2 cites·21 claims
- 3286US8446988B2System and method for selectively performing single-ended and differential signalingCHUNG HOE-JU·Filed 2011·Granted May 21, 2013·7 cites·4 claims
- 3386US8112680B2System and device with error detection/correction process and method outputting dataCHUNG HOE-JU·Filed 2008·Granted Feb 7, 2012·16 cites·24 claims
- 3486US7936196B2First delay locking method, delay-locked loop, and semiconductor memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted May 3, 2011·12 cites·23 claims
- 3586US7716401B2Memory module capable of improving the integrity of signals transmitted through a data bus and a command/address bus, and a memory system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 11, 2010·35 cites·14 claims
- 3686US7692983B2Memory system mounted directly on board and associated methodSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 6, 2010·16 cites·20 claims
- 3786US7577760B2Memory systems, modules, controllers and methods using dedicated data and control bussesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 18, 2009·16 cites·7 claims
- 3886US6337809B1Semiconductor memory device capable of improving data processing speed and efficiency of a data input and output pin and related method for controlling read and writeSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jan 8, 2002·46 cites·8 claims
- 3985US7545164B2Output driver for controlling impedance and intensity of pre-emphasis driver using mode register setSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 9, 2009·14 cites·10 claims
- 4085US5920511AHigh-speed data input circuit for a synchronous memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Jul 6, 1999·58 cites·49 claims
- 4184US8654864B2System and method for selectively performing single-ended and differential signalingCHUNG HOE-JU·Filed 2013·Granted Feb 18, 2014·5 cites·8 claims
- 4283US8891324B2Memory device from which dummy edge memory block is removedYI CHUL-WOO·Filed 2013·Granted Nov 18, 2014·8 cites·11 claims
- 4383US7296110B2Memory system and data channel initialization method for memory systemSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 13, 2007·12 cites·11 claims
- 4483US7145828B2Semiconductor memory device with auto refresh to specified bankSASUNG EELCTRONICS CO LTD·Filed 2005·Granted Dec 5, 2006·18 cites·43 claims
- 4582US9082504B2Semiconductor memory device storing refresh period information and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 14, 2015·7 cites·20 claims
- 4682US8520461B2Row address code selection based on locations of substandard memory cellsLEE DONG-HYUK·Filed 2010·Granted Aug 27, 2013·8 cites·20 claims
- 4782US7016237B2Data input circuit and method for synchronous semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 21, 2006·27 cites·17 claims
- 4881US6564287B1Semiconductor memory device having a fixed CAS latency and/or burst lengthSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted May 13, 2003·30 cites·17 claims
- 4980US6414517B1Input buffer circuits with input signal boost capability and methods of operation thereofSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jul 2, 2002·29 cites·38 claims
- 5080US6380799B1Internal voltage generation circuit having stable operating characteristics at low external supply voltagesSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Apr 30, 2002·27 cites·13 claims
Showing the top 50 of 140 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →