Inventor · disambiguated record
Jun-Nan Nian
Also filed as: NIAN JUN-NAN
18 granted patents·8 pending applications·13 citations·filing 2011–2025
89Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD22CHANG SHIH-CHIEH1NIAN JUN-NAN1TAIWAN SEMICONDUCTOR MANFACTURING COMPANY LTD1TAIWAN SEMICONDUCTOR MFG1
Top patents by PatentIndex Score
26 records- 0180US2025360594A1Apparatus and method for monitoring chemical mechanical polishingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0279US8435893B1Semiconductor device and method of formationNIAN JUN-NAN·Filed 2011·Granted May 7, 2013·6 cites·13 claims
- 0378US9870995B2Formation of copper layer structure with self anneal strain improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 16, 2018·2 cites·20 claims
- 0477US8610230B1HfO2/SiO2-Si interface improvement for CMOS image sensorTAIWAN SEMICONDUCTOR MANFACTURING COMPANY LTD·Filed 2012·Granted Dec 17, 2013·2 cites·20 claims
- 0573US10269918B2N-work function metal with crystal structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·1 cites·39 claims
- 0673US2024371919A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0772US2025300005A1Method of manufacturing semiconductor devices and semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0871US2025323144A1Conductive structures and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0969US12341055B2Method of manufacturing semiconductor devices and semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 24, 2025·0 cites·20 claims
- 1069US12080751B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 3, 2024·0 cites·20 claims
- 1168US10749278B2Method of electroplating metal into recessed feature and electroplating layer in recessed featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 18, 2020·0 cites·20 claims
- 1267US11598016B2Electrochemical plating system and method of usingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 7, 2023·0 cites·20 claims
- 1367US2024051085A1Apparatus and method for monitoring chemical mechanical polishingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 1464US12362273B2Conductive structures and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 15, 2025·0 cites·20 claims
- 1564US9698019B2N-work function metal with crystal structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 4, 2017·1 cites·20 claims
- 1662US11133395B2N-work function metal with crystal structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 28, 2021·0 cites·18 claims
- 1762US8642439B2Semiconductor device and method of formationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Feb 4, 2014·1 cites·20 claims
- 1861US11603602B2Method for controlling electrochemical deposition to avoid defects in interconnect structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 14, 2023·0 cites·20 claims
- 1959US11230784B2Electrochemical plating system and method of usingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 25, 2022·0 cites·20 claims
- 2059US8759928B2Image sensor cross-talk reduction system and methodCHANG SHIH-CHIEH·Filed 2012·Granted Jun 24, 2014·0 cites·20 claims
- 2157US11015260B2Method for controlling electrochemical deposition to avoid defects in interconnect structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 25, 2021·0 cites·11 claims
- 2256US2024392463A1Semiconductor electrochemical plating apparatus and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2355US10879629B2Method of electroplating metal into recessed feature and electroplating layer in recessed featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 29, 2020·0 cites·20 claims
- 2455US2024355870A1Capacitor structure including a buffer layer and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2554US10840184B2Formation of copper layer structure with self anneal strain improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 17, 2020·0 cites·20 claims
- 2653US2024387379A1Method and apparatus for copper plating in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →