Inventor · disambiguated record
Jun Ohtani
Also filed as: OHTANI JUN
24 granted patents·2 pending applications·1,221 citations·filing 1994–2005
97Inventor score
Top patents by PatentIndex Score
26 records- 0199US7173857B2Nonvolatile semiconductor memory device capable of uniformly inputting/outputting dataRENESAS TECH CORP·Filed 2005·Granted Feb 6, 2007·414 cites·4 claims
- 0296US6807101B2Semiconductor memory deviceRENESAS TECH CORP·Filed 2002·Granted Oct 19, 2004·121 cites·20 claims
- 0396US6421286B1Semiconductor integrated circuit device capable of self-analyzing redundancy replacement adapting to capacities of plural memory circuits integrated thereinMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jul 16, 2002·116 cites·16 claims
- 0493US5521878AClock synchronous semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1994·Granted May 28, 1996·85 cites·28 claims
- 0587US6717844B1Semiconductor memory device with latch circuit and two magneto-resistance elementsRENESAS TECH CORP·Filed 2002·Granted Apr 6, 2004·44 cites·4 claims
- 0687US5708622AClock synchronous semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Jan 13, 1998·53 cites·7 claims
- 0786US5835448AClock synchronous semiconductor memory device for determining an operation modeMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Nov 10, 1998·48 cites·17 claims
- 0884US6856550B2Nonvolatile semiconductor memory device capable of uniformly inputting/outputting dataRENESAS TECH CORP·Filed 2002·Granted Feb 15, 2005·31 cites·10 claims
- 0983US6297997B1Semiconductor device capable of reducing cost of analysis for finding replacement address in memory arrayMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Oct 2, 2001·53 cites·13 claims
- 1081US6765832B1Semiconductor memory device with word line shift configurationRENESAS TECH CORP·Filed 2003·Granted Jul 20, 2004·31 cites·8 claims
- 1180US6671213B2Thin film magnetic memory device having redundancy repair functionRENESAS TECH CORP·Filed 2002·Granted Dec 30, 2003·28 cites·8 claims
- 1279US6895537B2Semiconductor integrated circuit device including semiconductor memory with tester circuit capable of analyzing redundancy repairRENESAS TECH CORP·Filed 2001·Granted May 17, 2005·29 cites·10 claims
- 1378US6778432B2Thin film magnetic memory device capable of stably writing/reading data and method of fabricating the sameRENESAS TECH CORP·Filed 2003·Granted Aug 17, 2004·26 cites·7 claims
- 1475US6625072B2Semiconductor integrated circuit device provided with a self-testing circuit for carrying out an analysis for repair by using a redundant memory cellMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Sep 23, 2003·23 cites·13 claims
- 1573US6130852AMemory integrated circuit device including a memory having a configuration suitable for mixture with logicMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Oct 10, 2000·32 cites·20 claims
- 1671US6584005B1Semiconductor memory device preventing erroneous writing in write operation and delay in read operationMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Jun 24, 2003·18 cites·15 claims
- 1768US6535993B1Testing apparatus for semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Mar 18, 2003·26 cites·13 claims
- 1856US6545921B2Semiconductor memory device allowing spare memory cell to be tested efficientlyMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Apr 8, 2003·9 cites·9 claims
- 1948US6891760B2Method of erasing information in non-volatile semiconductor memory deviceRENESAS TECH CORP·Filed 2002·Granted May 10, 2005·5 cites·5 claims
- 2048US6813188B2Non-volatile semiconductor memory device having a memory cell which stably retains informationRENESAS TECH CORP·Filed 2002·Granted Nov 2, 2004·5 cites·5 claims
- 2148US6809969B2Non-volatile semiconductor memory device capable of rapid operationRENESAS TECH CORP·Filed 2003·Granted Oct 26, 2004·5 cites·5 claims
- 2244US6888775B2Semiconductor memory device for improvement of defective data line relief rateRENESAS TECH CORP·Filed 2003·Granted May 3, 2005·4 cites·7 claims
- 2342US6744672B2Non-volatile semiconductor memory device capable of high-speed data readingRENESAS TECH CORP·Filed 2002·Granted Jun 1, 2004·1 cites·6 claims
- 2442US6157973AMicrocomputer having memory and processor formed on the same chip to increase the rate of information transferMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Dec 5, 2000·14 cites·19 claims
- 2538US2004217411A1Non-volatile semiconductor memory device and manufacturing method thereforRENESAS TECH CORP·Filed 2004·Application pending·0 cites
- 2637US2003157758A1Non-volatile semiconductor memory device and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 2002·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Jun Ohtani files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →