Inventor · disambiguated record
Jun Seo
Also filed as: SEO JUN · SEO JUN-TAEK
21 granted patents·216 citations·filing 1999–2018
94Inventor score
Top patents by PatentIndex Score
21 records- 0193US7531449B2Method of forming fine patterns using double patterning processSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 12, 2009·29 cites·20 claims
- 0290US6239022B1Method of fabricating a contact in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted May 29, 2001·53 cites·21 claims
- 0388US7745290B2Methods of fabricating semiconductor device including fin-fetSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 29, 2010·15 cites·12 claims
- 0486US7221023B2Asymmetric source/drain transistor employing selective epitaxial growth (SEG) layer and method of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 22, 2007·11 cites·9 claims
- 0585US7723191B2Method of manufacturing semiconductor device having buried gateSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 25, 2010·14 cites·20 claims
- 0684US7524733B2Asymmetric source/drain transistor employing selective epitaxial growth (SEG) layer and method of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 28, 2009·9 cites·11 claims
- 0782US6573602B2Semiconductor device with a self-aligned contact and a method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jun 3, 2003·30 cites·14 claims
- 0871US7531414B2Method of manufacturing integrated circuit device including recessed channel transistorSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 12, 2009·4 cites·13 claims
- 0970US7863137B2Methods of fabricating field effect transistors having protruded active regionsSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jan 4, 2011·3 cites·11 claims
- 1070US7534704B2Thin layer structure and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 19, 2009·5 cites·17 claims
- 1166US6808975B2Method for forming a self-aligned contact hole in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Oct 26, 2004·14 cites·29 claims
- 1264US7326619B2Method of manufacturing integrated circuit device including recessed channel transistorSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 5, 2008·10 cites·20 claims
- 1361US8216944B2Methods of forming patterns in semiconductor devicesKWON YONG-HYUN·Filed 2010·Granted Jul 10, 2012·1 cites·9 claims
- 1457US6097055ACapacitor and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Aug 1, 2000·18 cites·10 claims
- 1553US7655976B2Field effect transistors having protruded active regions and methods of fabricating such transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 2, 2010·0 cites·7 claims
- 1652US7989279B2Method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 2, 2011·0 cites·8 claims
- 1749US8378395B2Methods of fabricating field effect transistors having protruded active regionsSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Feb 19, 2013·0 cites·19 claims
- 1849US8361849B2Method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2011·Granted Jan 29, 2013·0 cites·8 claims
- 1946US7531450B2Method of fabricating semiconductor device having contact hole with high aspect-ratioSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 12, 2009·0 cites·20 claims
- 2041US6784097B2Method of manufacturing a semiconductor device with a self-aligned contactSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 31, 2004·0 cites·10 claims
- 2134US10985047B2Semiconductor manufacturing apparatus and driving method of the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 20, 2021·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →