Inventor · disambiguated record
Jung-Hun Sung
Also filed as: SUNG JUNG-HUN
13 granted patents·8 pending applications·69 citations·filing 2007–2016
90Inventor score
Top patents by PatentIndex Score
21 records- 0193US8385122B2Non-volatile memory device having stacked structure, and memory card and electronic system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Feb 26, 2013·18 cites·31 claims
- 0292US10105943B2Lamination apparatus and lamination method using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 23, 2018·8 cites·11 claims
- 0376US8062978B2Crystalline aluminum oxide layers having increased energy band gap, charge trap layer devices including crystalline aluminum oxide layers, and methods of manufacturing the sameCHOI SANG-MOO·Filed 2008·Granted Nov 22, 2011·6 cites·27 claims
- 0474US8823078B2Non-volatile memory device having stacked structure, and memory card and electronic system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Sep 2, 2014·4 cites·18 claims
- 0574US7751254B2Method of programming non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jul 6, 2010·8 cites·14 claims
- 0671US7675779B2Non-volatile memory devices and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 9, 2010·7 cites·31 claims
- 0769US8674475B2Antifuse and methods of operating and manufacturing the sameKIM DEOK-KEE·Filed 2009·Granted Mar 18, 2014·4 cites·19 claims
- 0864US7782666B2Apparatus and method of multi-bit programmingSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 24, 2010·5 cites·19 claims
- 0962US7929330B2Multi-bit memory device using multi-plugSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Apr 19, 2011·2 cites·20 claims
- 1061US7760551B2Method of programming nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jul 20, 2010·4 cites·23 claims
- 1156US7672167B2Non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 2, 2010·3 cites·19 claims
- 1253US8043952B2Method of forming aluminum oxide layer and method of manufacturing charge trap memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Oct 25, 2011·0 cites·19 claims
- 1348US2009206978A1Electrical fuse device including a fuse linkHWANG SOO-JUNG·Filed 2009·Application pending·0 cites
- 1446US7668016B2Non-volatile memory devices and programming methods thereof including moving electrons through pad oxide layers between charge trap layersSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 23, 2010·0 cites·25 claims
- 1543US2009050954A1Non-volatile memory device including charge trap layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 1643US2009045455A1Nonvolatile memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 1742US2008217681A1Charge trap memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1842US2009243787A1Electrical fuse devices and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 1942US2009021979A1Gate stack, capacitorless dynamic random access memory including the gate stack and methods of manufacturing and operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 2042US2008087944A1Charge trap memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 2128US2017005063A1Reflow apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →