Inventor · disambiguated record
Jung-Hui Tsai
Also filed as: TSAI JUNG-HUI
6 granted patents·35 citations·filing 1996–2003
80Inventor score
Technology areasH10D
Files withNAT KAOHSIUNG NORMAL UNIVERSIT2NAT SCIENCE COUNCIL2NAT SCIENCE COUNCIL REPUBLIC CHINA1NAT SCIENCE COUNSEL OF REPUBLI1
Top patents by PatentIndex Score
6 records- 0160US6465815B2High-breakdown voltage heterostructure field-effect transistor for high temperature operationsNAT SCIENCE COUNCIL·Filed 2000·Granted Oct 15, 2002·10 cites·26 claims
- 0254US6800880B1Heterojunction bipolar transistors with extremely low offset voltage and high current gainNAT KAOHSIUNG NORMAL UNIVERSIT·Filed 2003·Granted Oct 5, 2004·8 cites·18 claims
- 0346US6943386B2Pseudomorphic high electron mobility field effect transistor with high device linearityNAT KAOHSIUNG NORMAL UNIVERSIT·Filed 2003·Granted Sep 13, 2005·5 cites·15 claims
- 0434US5789771ACamel-gate field-effect transistor with multiple modulation-doped channelsNAT SCIENCE COUNCIL REPUBLIC CHINA·Filed 1996·Granted Aug 4, 1998·6 cites·4 claims
- 0533US5977572ALow offset voltage AlInAs/GaInAs heterostructure-confinement bipolar transistorNAT SCIENCE COUNCIL·Filed 1997·Granted Nov 2, 1999·5 cites·2 claims
- 0621US5698862AStructure of the heterostructure-emitter and heterostructure-base transistor (HEHBT)NAT SCIENCE COUNSEL OF REPUBLI·Filed 1996·Granted Dec 16, 1997·1 cites·8 claims
Join the waitlist — get patent alerts
Get an alert when Jung-Hui Tsai files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →