Inventor · disambiguated record
Jun-Lin Tsai
Also filed as: TSAI JUN-LIN
14 granted patents·159 citations·filing 1998–2005
92Inventor score
Files withTAIWAN SEMICONDUCTOR MFG14
Top patents by PatentIndex Score
14 records- 0177US6096629AUniform sidewall profile etch method for forming low contact leakage schottky diode contactTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Aug 1, 2000·53 cites·10 claims
- 0273US6340833B1Integrated circuit polysilicon resistor having a silicide extension to achieve 100 % metal shielding from hydrogen intrusionTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jan 22, 2002·16 cites·7 claims
- 0372US6165861AIntegrated circuit polysilicon resistor having a silicide extension to achieve 100% metal shielding from hydrogen intrusionTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Dec 26, 2000·29 cites·20 claims
- 0470US6569730B2High voltage transistor using P+ buried layerTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted May 27, 2003·13 cites·2 claims
- 0567US7372102B2Structure having a shallow trench-deep trench isolation region for a BiCMOS/CMOS technologyTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted May 13, 2008·3 cites·12 claims
- 0663US7015086B2Method of forming a shallow trench-deep trench isolation region for a BiCMOS/CMOS technologyTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Mar 21, 2006·10 cites·14 claims
- 0747US7250344B2Method of forming a shallow trench-deep trench isolation region for a BiCMOS/CMOS technologyTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jul 31, 2007·0 cites·14 claims
- 0847US6245609B1High voltage transistor using P+ buried layerTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jun 12, 2001·8 cites·8 claims
- 0944US6396126B1High voltage transistor using P+ buried layerTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted May 28, 2002·2 cites·12 claims
- 1042US6423590B2High voltage transistor using P+ buried layerTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jul 23, 2002·2 cites·12 claims
- 1142US6242313B1Use of polysilicon field plates to improve high voltage bipolar device breakdown voltageTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jun 5, 2001·12 cites·19 claims
- 1240US6211028B1Twin current bipolar device with hi-lo base profileTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Apr 3, 2001·7 cites·11 claims
- 1334US6747336B2Twin current bipolar device with hi-lo base profileTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jun 8, 2004·0 cites·9 claims
- 1433US6162695AField ring to improve the breakdown voltage for a high voltage bipolar deviceTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Dec 19, 2000·4 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →