Inventor · disambiguated record
Justin R. Weber
Also filed as: WEBER JUSTIN R · Weber Justin
22 granted patents·5 pending applications·40 citations·filing 2014–2023
92Inventor score
Files withINTEL CORP27
Top patents by PatentIndex Score
27 records- 0196US11843058B2Transistor structures with a metal oxide contact buffer and a method of fabricating the transistor structuresINTEL CORP·Filed 2021·Granted Dec 12, 2023·3 cites·18 claims
- 0295US11764306B2Multi-layer crystalline back gated thin film transistorINTEL CORP·Filed 2021·Granted Sep 19, 2023·2 cites·20 claims
- 0395US11171243B2Transistor structures with a metal oxide contact bufferINTEL CORP·Filed 2019·Granted Nov 9, 2021·11 cites·14 claims
- 0490US11404319B2Vertically stacked finFETs and shared gate patterningINTEL CORP·Filed 2017·Granted Aug 2, 2022·5 cites·20 claims
- 0590US10892335B2Device isolation by fixed chargeINTEL CORP·Filed 2016·Granted Jan 12, 2021·6 cites·20 claims
- 0685US11362189B2Stacked self-aligned transistors with single workfunction metalINTEL CORP·Filed 2018·Granted Jun 14, 2022·4 cites·25 claims
- 0785US11152514B2Multi-layer crystalline back gated thin film transistorINTEL CORP·Filed 2017·Granted Oct 19, 2021·3 cites·25 claims
- 0883US11398560B2Contact electrodes and dielectric structures for thin film transistorsINTEL CORP·Filed 2018·Granted Jul 26, 2022·3 cites·17 claims
- 0981US12349416B2Transistor structures with a metal oxide contact buffer and a method of fabricating the transistor structuresINTEL CORP·Filed 2023·Granted Jul 1, 2025·0 cites·20 claims
- 1081US11171239B2Transistor channel passivation with 2D crystalline materialINTEL CORP·Filed 2019·Granted Nov 9, 2021·2 cites·17 claims
- 1180US12119409B2Multi-layer crystalline back gated thin film transistorINTEL CORP·Filed 2023·Granted Oct 15, 2024·0 cites·20 claims
- 1272US11522060B2Epitaxial layers on contact electrodes for thin- film transistorsINTEL CORP·Filed 2018·Granted Dec 6, 2022·1 cites·24 claims
- 1371US11658072B2Vertically stacked transistors in a finINTEL CORP·Filed 2021·Granted May 23, 2023·0 cites·20 claims
- 1470US12100623B2Vertically stacked finFETs and shared gate patterningINTEL CORP·Filed 2022·Granted Sep 24, 2024·0 cites·17 claims
- 1568US12107170B2Transistor channel passivation with 2D crystalline materialINTEL CORP·Filed 2021·Granted Oct 1, 2024·0 cites·17 claims
- 1659US10535770B2Scaled TFET transistor formed using nanowire with surface terminationINTEL CORP·Filed 2014·Granted Jan 14, 2020·0 cites·12 claims
- 1757US11075119B2Vertically stacked transistors in a pinINTEL CORP·Filed 2017·Granted Jul 27, 2021·0 cites·19 claims
- 1856US2025113573A1Transition metal dichalcogenide monolayer transfer using low strain transfer protective layerINTEL CORP·Filed 2023·Application pending·0 cites
- 1954US2024186398A1Integrated circuit structures with cavity spacersINTEL CORP·Filed 2022·Application pending·0 cites
- 2051US12432948B2Compositional engineering of Schottky diodeINTEL CORP·Filed 2020·Granted Sep 30, 2025·0 cites·8 claims
- 2151US11637185B2Contact stacks to reduce hydrogen in semiconductor devicesINTEL CORP·Filed 2018·Granted Apr 25, 2023·0 cites·20 claims
- 2250US11462568B2Stacked thin film transistorsINTEL CORP·Filed 2018·Granted Oct 4, 2022·0 cites·20 claims
- 2346US11784239B2Subfin leakage suppression using fixed chargeINTEL CORP·Filed 2016·Granted Oct 10, 2023·0 cites·20 claims
- 2444US2023102219A1Graphitic carbon contacts for devices with oxide channelsINTEL CORP·Filed 2021·Application pending·0 cites
- 2542US12191349B2Reducing off-state leakage in semiconductor devicesINTEL CORP·Filed 2017·Granted Jan 7, 2025·0 cites·25 claims
- 2642US2020006570A1Contact structures for thin film transistor devicesINTEL CORP·Filed 2018·Application pending·0 cites
- 2741US2017358658A1Metal oxide metal field effect transistors (momfets)INTEL CORP·Filed 2014·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →