Inventor · disambiguated record
Julie Widiez
Also filed as: WIDIEZ JULIE
12 granted patents·4 pending applications·35 citations·filing 2011–2023
85Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE11COMMISSARIAT A IENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES2ALLIBERT FRÉDÉRIC1AVENAS YVAN1SOITEC SILICON ON INSULATOR1
Top patents by PatentIndex Score
16 records- 0189US11264425B2Process for fabricating an array of germanium-based diodes with low dark currentCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted Mar 1, 2022·5 cites·12 claims
- 0289US9129800B2Manufacturing method for a semiconductor on insulator type substrate for radiofrequency applicationsALLIBERT FRÉDÉRIC·Filed 2012·Granted Sep 8, 2015·17 cites·5 claims
- 0385US11251339B2Process for fabricating an optoelectronic device for emitting infrared light comprising a GeSn-based active layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted Feb 15, 2022·2 cites·11 claims
- 0476US10840110B2Process for fabricating a heterostructure comprising a conductive structure and a semiconductor structure and including a step of electrical discharge machiningCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Nov 17, 2020·3 cites·16 claims
- 0575US8766433B2Electronic chip having channels through which a heat transport coolant can flow, electronic components and communication arm incorporating said chipAVENAS YVAN·Filed 2011·Granted Jul 1, 2014·8 cites·17 claims
- 0664US12166063B2Optoelectronic device having an array of germanium-based diodes with low dark currentCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Granted Dec 10, 2024·0 cites·10 claims
- 0763US12412786B2Method for transferring a layer from a source substrate to a destination substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2023·Granted Sep 9, 2025·0 cites·11 claims
- 0862US12424497B2Method for transferring a layer from a source substrate to a destination substrateCOMMISSARIAT A IENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES·Filed 2023·Granted Sep 23, 2025·0 cites·11 claims
- 0955US2023369413A1Electronic device made of carbon silicide and method of manufacturing the sameCOMMISSARIAT A IENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES·Filed 2023·Application pending·0 cites
- 1054US11005002B2Manufacturing of a semiconductor photosensitive deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted May 11, 2021·0 cites·14 claims
- 1148US2022199777A1Electronic device made of carbon silicide and method of manufacturing the sameCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Application pending·0 cites
- 1248US2024266172A1Semiconductor structure comprising an electrically conductive bonding interface, and associated manufacturing methodCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Application pending·0 cites
- 1347US11887910B2Electronic power moduleCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted Jan 30, 2024·0 cites·14 claims
- 1446US2024312831A1Method for producing a semiconductor structure comprising a useful layer made of silicon carbide, with improved electrical propertiesSOITEC SILICON ON INSULATOR·Filed 2022·Application pending·0 cites
- 1534US9991191B2Electronic power device with flat electronic interconnection structureCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Jun 5, 2018·0 cites·17 claims
- 1633US10083942B2Electronic power device with vertical 3D switching cellCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Sep 25, 2018·0 cites·34 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →