Inventor · disambiguated record
Jung Gil Yang
Also filed as: YANG JUNG-GIL
44 granted patents·1 pending application·234 citations·filing 2014–2023
98Inventor score
Top patents by PatentIndex Score
45 records- 0198US11393929B2Semiconductor devices and manufacturing methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jul 19, 2022·4 cites·20 claims
- 0298US10243040B1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Mar 26, 2019·38 cites·20 claims
- 0397US11735629B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 22, 2023·3 cites·16 claims
- 0497US11444081B2Integrated circuit (IC) deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Sep 13, 2022·3 cites·20 claims
- 0597US9929235B1Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Mar 27, 2018·18 cites·20 claims
- 0697US9412816B2Semiconductor device including multiple nanowire transistorSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Aug 9, 2016·25 cites·15 claims
- 0796US11894379B2Semiconductor devices and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Feb 6, 2024·2 cites·20 claims
- 0896US11367723B2Semiconductor devices and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jun 21, 2022·3 cites·20 claims
- 0996US11222949B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jan 11, 2022·3 cites·20 claims
- 1096US10128379B2Semiconductor device having channel regionsSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Nov 13, 2018·14 cites·20 claims
- 1196US9978835B2Semiconductor device including nanowire transistorSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 22, 2018·15 cites·16 claims
- 1296US9324812B2Semiconductor device including nanowire transistorSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Apr 26, 2016·24 cites·19 claims
- 1395US11923362B2Integrated circuit (IC) deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Mar 5, 2024·1 cites·20 claims
- 1495US10872983B2Semiconductor devices and manufacturing methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 22, 2020·9 cites·16 claims
- 1595US10431585B2Semiconductor devices with multi-gate structure and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 1, 2019·9 cites·18 claims
- 1694US10629740B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 21, 2020·8 cites·19 claims
- 1793US11676964B2Integrated circuit (IC) deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jun 13, 2023·1 cites·20 claims
- 1893US11107822B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 31, 2021·8 cites·20 claims
- 1993US10930649B2Integrated circuit (IC) deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 23, 2021·5 cites·19 claims
- 2091US11164943B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 2, 2021·2 cites·20 claims
- 2191US10566331B1Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 18, 2020·7 cites·20 claims
- 2291US10181510B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 15, 2019·7 cites·19 claims
- 2390US11309421B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Apr 19, 2022·2 cites·20 claims
- 2490US11024628B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jun 1, 2021·5 cites·18 claims
- 2590US10784344B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Sep 22, 2020·4 cites·19 claims
- 2685US10756179B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 25, 2020·2 cites·20 claims
- 2785US9646891B2Metal-oxide semiconductor field effect transistor, method of fabricating the same, and semiconductor apparatus including the sameYANG JUNG-GIL·Filed 2015·Granted May 9, 2017·7 cites·21 claims
- 2881US12199099B2Semiconductor devices and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jan 14, 2025·0 cites·10 claims
- 2981US10014393B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 3, 2018·3 cites·15 claims
- 3081US9515147B2Semiconductor device including nanowire transistorSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Dec 6, 2016·2 cites·5 claims
- 3175US11923456B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Mar 5, 2024·0 cites·20 claims
- 3275US11640973B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted May 2, 2023·0 cites·20 claims
- 3374US11908952B2Semiconductor devices and manufacturing methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Feb 20, 2024·0 cites·18 claims
- 3467US11683925B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jun 20, 2023·0 cites·20 claims
- 3566US10923476B2Semiconductor devices and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 16, 2021·0 cites·19 claims
- 3663US11967614B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Apr 23, 2024·0 cites·20 claims
- 3763US11710741B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 25, 2023·0 cites·14 claims
- 3862US12107135B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 1, 2024·0 cites·18 claims
- 3961US10347718B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jul 9, 2019·0 cites·20 claims
- 4059US10665723B2Semiconductor device having channel regionsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 26, 2020·0 cites·5 claims
- 4158US11139382B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 5, 2021·0 cites·19 claims
- 4257US11322589B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 3, 2022·0 cites·9 claims
- 4345US9129815B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Sep 8, 2015·0 cites·20 claims
- 4443US2015200289A1Tunneling field effect transistorSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 4539US9450049B2Semiconductor device and method for fabricating the sameKWON TAE-YONG·Filed 2014·Granted Sep 20, 2016·0 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →