Inventor · disambiguated record
Jung-Ping Yang
Also filed as: YANG JUNG-PING
35 granted patents·8 pending applications·148 citations·filing 2007–2025
96Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD21TAIWAN SEMICONDUCTOR MFG8YANG JUNG-PING5CHENG HONG-CHEN3NOVATEK MICROELECTRONICS CORP3
Top patents by PatentIndex Score
43 records- 0198US9117510B2Circuit for memory write data operationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 25, 2015·69 cites·20 claims
- 0293US9449663B2Circuit for memory write data operationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 20, 2016·14 cites·20 claims
- 0391US10503421B2Configurable memory storage systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·6 cites·20 claims
- 0490US11301148B2Configurable memory storage systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 12, 2022·2 cites·20 claims
- 0585US11723194B2Integrated circuit read only memory (ROM) structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 8, 2023·1 cites·20 claims
- 0684US9449656B2Memory with bit cell header transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 20, 2016·9 cites·20 claims
- 0781US9484084B2Pulling devices for driving data linesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 1, 2016·5 cites·20 claims
- 0880US8675439B2Bit line voltage bias for low power memory designCHENG HONG-CHEN·Filed 2011·Granted Mar 18, 2014·8 cites·17 claims
- 0978US2025166681A1Three-dimensional (3-d) write assist scheme for memory cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1077US9083342B2Circuit and method for power managementTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 14, 2015·4 cites·19 claims
- 1176US11963348B2Integrated circuit read only memory (ROM) structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·0 cites·20 claims
- 1276US10949100B2Configurable memory storage systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 16, 2021·2 cites·20 claims
- 1376US8982609B2Memory having read assist device and method of operating the sameYANG JUNG-PING·Filed 2012·Granted Mar 17, 2015·6 cites·20 claims
- 1475US9721651B2Write driver and level shifter having shared transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 1, 2017·3 cites·20 claims
- 1574US12237050B2Three-dimensional (3-D) write assist scheme for memory cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 25, 2025·0 cites·19 claims
- 1673US9104214B2Voltage providing circuitTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 11, 2015·3 cites·21 claims
- 1772US11675505B2Configurable memory storage systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 13, 2023·0 cites·20 claims
- 1870US9058858B2Method and apparatus for dual rail SRAM level shifter with latchingCHENG HONG-CHEN·Filed 2011·Granted Jun 16, 2015·4 cites·19 claims
- 1970US2025324583A1Integrated circuit read only memory (rom) structureTAIWAN SEMICONDUCTOR MANUFACTRING COMPANY LTD·Filed 2024·Application pending·0 cites
- 2069US9240233B1Integrated circuit having voltage mismatch reductionTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jan 19, 2016·3 cites·20 claims
- 2168US11417377B2Three-dimensional (3-D) write assist scheme for memory cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 16, 2022·0 cites·20 claims
- 2267US8659090B2Resistive memory and methods for forming the sameHUANG CHIA-EN·Filed 2011·Granted Feb 25, 2014·3 cites·20 claims
- 2362US9275181B2Cell designTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Mar 1, 2016·1 cites·20 claims
- 2461US9905291B2Circuit and method of generating a sense amplifier enable signalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 27, 2018·1 cites·20 claims
- 2561US9153302B2Memory and method of operating the sameYANG JUNG-PING·Filed 2012·Granted Oct 6, 2015·2 cites·20 claims
- 2656US9564193B2Circuit to generate a sense amplifier enable signalTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Feb 7, 2017·1 cites·20 claims
- 2754US9218262B2Dynamic memory cell replacement using column redundancyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 22, 2015·1 cites·18 claims
- 2853US10777244B2Three-dimensional (3-D) write assist scheme for memory cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 15, 2020·0 cites·20 claims
- 2953US2010318753A1Memory architecture of display device and reading method thereofNOVATEK MICROELECTRONICS CORP·Filed 2009·Application pending·0 cites
- 3050US2008316199A1Circuit system for reading memory data for display deviceYANG JUNG-PING·Filed 2007·Application pending·0 cites
- 3149US2008320199A1Memory and control apparatus for display device, and memory thereforNOVATEK MICROELECTRONICS CORP·Filed 2008·Application pending·0 cites
- 3248US10176855B2Three-dimensional (3-D) write assist scheme for memory cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jan 8, 2019·0 cites·19 claims
- 3347US10001801B2Voltage providing circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 19, 2018·0 cites·20 claims
- 3443US9390816B2Integrated circuit having voltage mismatch reductionTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jul 12, 2016·0 cites·20 claims
- 3543US9164522B2Wake up bias circuit and method of using the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 20, 2015·0 cites·20 claims
- 3642US10049706B2Memory and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 14, 2018·0 cites·20 claims
- 3742US2011187757A1Source driving apparatus for displayNOVATEK MICROELECTRONICS CORP·Filed 2011·Application pending·0 cites
- 3840US2011169870A1Method and Device for Cancelling Deviation Voltage of a Source Driver of a Liquid Crystal DisplayYANG JUNG-PING·Filed 2010·Application pending·0 cites
- 3938US8976611B2Asymmetric sensing amplifier, memory device and designing methodYANG JUNG-PING·Filed 2013·Granted Mar 10, 2015·0 cites·20 claims
- 4037US8385136B2Memory circuit and method of operating the sameTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Feb 26, 2013·0 cites·20 claims
- 4136US8792292B2Providing row redundancy to solve vertical twin bit failuresCHENG HONG-CHEN·Filed 2011·Granted Jul 29, 2014·0 cites·20 claims
- 4232US9659603B2Power management circuit for an electronic deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 23, 2017·0 cites·20 claims
- 4331US2011153923A1High speed memory systemPENG YU-HSUN·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →