Inventor · disambiguated record
Jungho Yoon
Also filed as: YOON JUNGHO
13 granted patents·6 pending applications·18 citations·filing 2019–2025
86Inventor score
Top patents by PatentIndex Score
19 records- 0197US11024357B1Nonvolatile memory cell and nonvolatile memory device comprising the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jun 1, 2021·9 cites·25 claims
- 0288US10930353B1Non-volatile memory device and operating method of the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 23, 2021·3 cites·25 claims
- 0384US2025359493A1Variable resistance memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 0483US11605428B2Vertical nonvolatile memory device including memory cell stringSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Mar 14, 2023·1 cites·32 claims
- 0582US12408566B2Variable resistance memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Sep 2, 2025·0 cites·20 claims
- 0681US10903235B2Non-volatile memory device and operation method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 26, 2021·3 cites·20 claims
- 0775US11087839B2Nonvolatile memory device with vertical string including semiconductor and resistance change layers, and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 10, 2021·1 cites·17 claims
- 0871US11894053B2Vertical nonvolatile memory device including memory cell stringSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Feb 6, 2024·0 cites·20 claims
- 0970US11239416B2Variable resistance memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 1, 2022·1 cites·23 claims
- 1069US11723289B2Variable resistance memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 8, 2023·0 cites·21 claims
- 1167US12219887B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Feb 4, 2025·0 cites·18 claims
- 1264US11575084B2Variable resistance memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 7, 2023·0 cites·25 claims
- 1363US11574677B2Nonvolatile memory device with vertical string including semiconductor and resistance change layers, and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Feb 7, 2023·0 cites·21 claims
- 1463US2025079461A1Anode active material and its manufacturing method, lithium ion battery and all-solid-state lithium thin-film battery using the sameKOREA INST SCI & TECH·Filed 2024·Application pending·0 cites
- 1555US2022086961A1Transparent thin film heater with good moisture tolerance and mechanical properties comprising a transparent conducting oxide and the method for producing the sameKOREA INST SCI & TECH·Filed 2021·Application pending·0 cites
- 1654US2024180043A1Heterojunction semiconductor flexible substrate, manufactring method thereof, and electronic device using the sameKOREA INST SCI & TECH·Filed 2023·Application pending·0 cites
- 1753US2024180041A1Heterojunction semiconductor substrate with excellent dielectric properties, method of manufacturing the same and electronic device using the sameKOREA INST SCI & TECH·Filed 2023·Application pending·0 cites
- 1852US2023010061A1Semiconductor substrate with oxide single crystal heterostructures, manufacturing method thereof and electronic device using the sameKOREA INST SCI & TECH·Filed 2022·Application pending·0 cites
- 1948US11557723B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 17, 2023·0 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →