Inventor · disambiguated record
Jung-Gun You
Also filed as: YOU JUNG GUN
51 granted patents·9 pending applications·137 citations·filing 2015–2024
97Inventor score
Top patents by PatentIndex Score
60 records- 0197US10038093B2FIN field effect transistors having liners between device isolation layers and active areas of the deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 31, 2018·25 cites·19 claims
- 0296US9899388B2Integrated circuit device and method of manufacturing the sameKIM KI IL·Filed 2016·Granted Feb 20, 2018·16 cites·25 claims
- 0393US9679978B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 13, 2017·10 cites·20 claims
- 0492US9721950B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 1, 2017·9 cites·20 claims
- 0591US9659827B2Methods of manufacturing semiconductor devices by forming source/drain regions before gate electrode separationSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 23, 2017·9 cites·20 claims
- 0689US9853029B2Integrated circuit device and method of manufacturing the sameYOU JUNG-GUN·Filed 2016·Granted Dec 26, 2017·7 cites·19 claims
- 0788US9865736B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 9, 2018·7 cites·18 claims
- 0887US9935017B2Methods of manufacturing semiconductor devices by forming source/drain regions before gate electrode separationSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Apr 3, 2018·5 cites·10 claims
- 0986US10096714B2Integrated circuit device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 9, 2018·4 cites·18 claims
- 1084US10629742B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 21, 2020·4 cites·18 claims
- 1184US10192968B2Semiconductor devices having gate structures with skirt regionsYOU JUNG GUN·Filed 2016·Granted Jan 29, 2019·4 cites·19 claims
- 1282US10944003B2Vertical field effect transistor and semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 9, 2021·1 cites·20 claims
- 1382US10157917B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Dec 18, 2018·3 cites·7 claims
- 1482US9768169B2Semiconductor devices and fabricating methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Sep 19, 2017·3 cites·17 claims
- 1582US9601628B2Semiconductor device having asymmetric fin-shaped patternYOU JUNG-GUN·Filed 2015·Granted Mar 21, 2017·3 cites·18 claims
- 1681US10103142B2Integrated circuit (IC) devices including stress inducing layersSUNG SUG HYUN·Filed 2016·Granted Oct 16, 2018·6 cites·20 claims
- 1781US9871042B2Semiconductor device having fin-type patternsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 16, 2018·3 cites·20 claims
- 1880US10461189B2Fin field effect transistors having liners between device isolation layers and active areas of the deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Oct 29, 2019·2 cites·20 claims
- 1979US9991264B1Integrated circuit device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 5, 2018·2 cites·20 claims
- 2077US11211497B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 28, 2021·1 cites·19 claims
- 2176US10074726B2Fin semiconductor device including dummy gate on isolation layerYOU JUNG GUN·Filed 2015·Granted Sep 11, 2018·3 cites·20 claims
- 2273US9865495B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 9, 2018·2 cites·24 claims
- 2373US9620406B2Methods for fabricating semiconductor devices having fin-shaped patterns by selectively removing oxidized fin-shaped patternsYOU JUNG-GUN·Filed 2015·Granted Apr 11, 2017·2 cites·19 claims
- 2472US10629729B2Vertical field effect transistor and semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 21, 2020·1 cites·15 claims
- 2571US10276570B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 30, 2019·1 cites·12 claims
- 2671US9536825B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jan 3, 2017·2 cites·11 claims
- 2768US11521900B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 6, 2022·0 cites·20 claims
- 2867US10170366B2Semiconductor device having dummy gates and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 1, 2019·1 cites·14 claims
- 2966US10910373B2Semiconductor device having asymmetric fin-shaped patternSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 2, 2021·0 cites·18 claims
- 3065US11600711B2Semiconductor devices having gate structures with skirt regionsSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Mar 7, 2023·0 cites·19 claims
- 3165US9711504B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 18, 2017·1 cites·17 claims
- 3264US10868007B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 15, 2020·0 cites·20 claims
- 3363US2025140694A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3463US2025254961A1Semiconductor device with backside source/drain contact and air structureSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3561US10910275B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 2, 2021·0 cites·6 claims
- 3660US10707348B2Fin field effect transistors having liners between device isolation layers and active areas of the deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 7, 2020·0 cites·19 claims
- 3760US10629597B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 21, 2020·0 cites·11 claims
- 3860US10522539B2Semiconductor devices and fabricating methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 31, 2019·0 cites·17 claims
- 3960US2024224487A1Semiconductor Devices Including FINFET Structures with Increased Gate SurfaceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4059US10692864B2Semiconductor device having asymmetric fin-shaped patternSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 23, 2020·0 cites·18 claims
- 4158US11956937B2Semiconductor device having fin-type pattern with varying widths along a center vertical line thereofSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Apr 9, 2024·0 cites·7 claims
- 4258US11043568B2Semiconductor devices having gate structures with skirt regionsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 22, 2021·0 cites·19 claims
- 4357US10211204B2Semiconductor devices and fabricating methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 19, 2019·0 cites·20 claims
- 4456US10483399B2Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Nov 19, 2019·0 cites·16 claims
- 4556US10199377B2Semiconductor device having asymmetric fin-shaped patternSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 5, 2019·0 cites·20 claims
- 4655US9941281B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Apr 10, 2018·0 cites·19 claims
- 4754US10083965B2Semiconductor device having fin-type patternsSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 25, 2018·0 cites·9 claims
- 4853US10475707B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 12, 2019·0 cites·10 claims
- 4953US9553089B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 24, 2017·0 cites·20 claims
- 5051US2023282640A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →