Inventor · disambiguated record
Jun Zeng
Also filed as: ZENG JUN · ZENG JUN-LANG
137 granted patents·42 pending applications·1,906 citations·filing 1987–2025
99Inventor score
Files withMAXPOWER SEMICONDUCTOR INC59FAIRCHILD SEMICONDUCTOR25ZENG JUN10INTERSIL CORP9Shapellx Us Inc9
Top patents by PatentIndex Score
179 records- 0199US8704295B1Schottky and MOSFET+Schottky structures, devices, and methodsDARWISH MOHAMED N·Filed 2011·Granted Apr 22, 2014·76 cites·20 claims
- 0298US8319278B1Power device structures and methods using empty space zonesZENG JUN·Filed 2010·Granted Nov 27, 2012·61 cites·18 claims
- 0398US8076719B2Semiconductor device structures and related processesZENG JUN·Filed 2009·Granted Dec 13, 2011·133 cites·6 claims
- 0498US6683346B2Ultra dense trench-gated power-device with the reduced drain-source feedback capacitance and Miller chargeFAIRCHILD SEMICONDUCTOR·Filed 2002·Granted Jan 27, 2004·190 cites·13 claims
- 0597US9093522B1Vertical power MOSFET with planar channel and vertical field plateMAXPOWER SEMICONDUCTOR INC·Filed 2014·Granted Jul 28, 2015·60 cites·24 claims
- 0697US8390060B2Power semiconductor devices, structures, and related methodsDARWISH MOHAMED N·Filed 2011·Granted Mar 5, 2013·27 cites·22 claims
- 0797US6188105B1High density MOS-gated power device and process for forming sameINTERSIL CORP·Filed 1999·Granted Feb 13, 2001·228 cites·34 claims
- 0896US12166747B2Management of secret informationLEMON INC·Filed 2022·Granted Dec 10, 2024·5 cites·16 claims
- 0995US8564057B1Power devices, structures, components, and methods using lateral drift, fixed net charge, and shieldDARWISH MOHAMED N·Filed 2010·Granted Oct 22, 2013·19 cites·10 claims
- 1095US8486941B2Phenyl amino pyrimidine compounds and uses thereofBURNS CHRISTOPHER JOHN·Filed 2008·Granted Jul 16, 2013·80 cites·17 claims
- 1195US8354711B2Power MOSFET and its edge terminationMAXPOWER SEMICONDUCTOR INC·Filed 2010·Granted Jan 15, 2013·23 cites·20 claims
- 1294US10353616B1Managing data relocation in storage systemsEMC CORP·Filed 2013·Granted Jul 16, 2019·27 cites·16 claims
- 1394US9024379B2Trench transistors and methods with low-voltage-drop shunt to body diodeMAXPOWER SEMICONDUCTOR INC·Filed 2013·Granted May 5, 2015·11 cites·20 claims
- 1494US8680607B2Trench gated power device with multiple trench width and its fabrication processZENG JUN·Filed 2012·Granted Mar 25, 2014·15 cites·20 claims
- 1594US6351009B1MOS-gated device having a buried gate and process for forming sameFAIRCHILD SEMICONDUCTOR·Filed 1999·Granted Feb 26, 2002·87 cites·18 claims
- 1693US7910439B2Super self-aligned trench MOSFET devices, methods, and systemsMAXPOWER SEMICONDUCTOR INC·Filed 2009·Granted Mar 22, 2011·27 cites·20 claims
- 1791US6784505B2Low voltage high density trench-gated power device with uniformly doped channel and its edge termination techniqueFAIRCHILD SEMICONDUCTOR·Filed 2002·Granted Aug 31, 2004·46 cites·4 claims
- 1890US7098500B2Ultra dense trench-gated power device with the reduced drain-source feedback capacitance and miller chargeFAIRCHILD SEMICONDUCTOR·Filed 2005·Granted Aug 29, 2006·13 cites·17 claims
- 1989US11316021B2High density power device with selectively shielded recessed field plateMAXPOWER SEMICONDUCTOR INC·Filed 2020·Granted Apr 26, 2022·2 cites·17 claims
- 2089US9842917B2Methods of operating power semiconductor devices and structuresMAXPOWER SEMICONDUCTOR INC·Filed 2016·Granted Dec 12, 2017·4 cites·20 claims
- 2189US9761702B2Power MOSFET having planar channel, vertical current path, and top drain electrodeMAXPOWER SEMICONDUCTOR INC·Filed 2016·Granted Sep 12, 2017·6 cites·20 claims
- 2289US9461127B2Vertical power MOSFET having planar channel and its method of fabricationMAXPOWER SEMICONDUCTOR INC·Filed 2015·Granted Oct 4, 2016·6 cites·32 claims
- 2389US8581341B2Power MOSFET with embedded recessed field plate and methods of fabricationDARWISH MOHAMED N·Filed 2011·Granted Nov 12, 2013·10 cites·18 claims
- 2489US8466025B2Semiconductor device structures and related processesZENG JUN·Filed 2011·Granted Jun 18, 2013·7 cites·7 claims
- 2589US7989293B2Trench device structure and fabricationMAXPOWER SEMICONDUCTOR INC·Filed 2009·Granted Aug 2, 2011·13 cites·13 claims
- 2688US10720511B2Trench transistors and methods with low-voltage-drop shunt to body diodeMAXPOWER SEMICONDUCTOR INC·Filed 2018·Granted Jul 21, 2020·2 cites·20 claims
- 2788US9227189B2Microfluidic liquid stream configuration systemSOBEK DANIEL·Filed 2006·Granted Jan 5, 2016·15 cites·19 claims
- 2888US9224855B2Trench gated power device with multiple trench width and its fabrication processMAXPOWER SEMICONDUCTOR INC·Filed 2014·Granted Dec 29, 2015·7 cites·9 claims
- 2988US9184248B2Vertical power MOSFET having planar channel and its method of fabricationMAXPOWER SEMICONDUCTOR INC·Filed 2015·Granted Nov 10, 2015·6 cites·21 claims
- 3088US8546893B2Devices, components and methods combining trench field plates with immobile electrostatic chargeDARWISH MOHAMED N·Filed 2011·Granted Oct 1, 2013·7 cites·20 claims
- 3188US8304329B2Power device structures and methodsZENG JUN·Filed 2009·Granted Nov 6, 2012·9 cites·7 claims
- 3288US7923804B2Edge termination with improved breakdown voltageMAXPOWER SEMICONDUCTOR INC·Filed 2009·Granted Apr 12, 2011·13 cites·20 claims
- 3388US6638826B2Power MOS device with buried gateFAIRCHILD SEMICONDUCTOR·Filed 2002·Granted Oct 28, 2003·43 cites·17 claims
- 3488US6362026B2Edge termination for silicon power devicesINTERSIL INC·Filed 2001·Granted Mar 26, 2002·35 cites·9 claims
- 3588US6246090B1Power trench transistor device source region formation using silicon spacerINTERSIL CORP·Filed 2000·Granted Jun 12, 2001·43 cites·13 claims
- 3685US8378416B2MOS-gated power devices, methods, and integrated circuitsMAXPOWER SEMICONDUCTOR INC·Filed 2009·Granted Feb 19, 2013·7 cites·23 claims
- 3785US4763506AAutomatic tube bending machineZENG JUN LANG·Filed 1987·Granted Aug 16, 1988·36 cites·7 claims
- 3884US9859400B2Trench transistors and methods with low-voltage-drop shunt to body diodeMAXPOWER SEMICONDUCTOR INC·Filed 2015·Granted Jan 2, 2018·2 cites·20 claims
- 3984US6445035B1Power MOS device with buried gate and grooveFAIRCHILD SEMICONDUCTOR·Filed 2000·Granted Sep 3, 2002·32 cites·14 claims
- 4083US9238628B2Phenyl amino pyrimidine compounds and uses thereofYM BIOSCIENCES AUSTRALIA PTY·Filed 2013·Granted Jan 19, 2016·5 cites·2 claims
- 4183US9076861B2Schottky and MOSFET+Schottky structures, devices, and methodsMAXPOWER SEMICONDUCTOR INC·Filed 2014·Granted Jul 7, 2015·5 cites·19 claims
- 4283US8310001B2MOSFET switch with embedded electrostatic chargeDARWISH MOHAMED N·Filed 2009·Granted Nov 13, 2012·8 cites·17 claims
- 4383US6916712B2MOS-gated device having a buried gate and process for forming sameFAIRCHILD SEMICONDUCTOR·Filed 2001·Granted Jul 12, 2005·23 cites·11 claims
- 4482US10157983B2Vertical power MOS-gated device with high dopant concentration N-well below P-well and with floating P-islandsMAXPOWER SEMICONDUCTOR INC·Filed 2018·Granted Dec 18, 2018·4 cites·20 claims
- 4582US8330213B2Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent chargesDARWISH MOHAMED N·Filed 2010·Granted Dec 11, 2012·5 cites·41 claims
- 4682US6921939B2Power MOSFET and method for forming same using a self-aligned body implantFAIRCHILD SEMICONDUCTOR·Filed 2001·Granted Jul 26, 2005·27 cites·16 claims
- 4781USD1070234SBody shaping garmentShapellx Us Inc·Filed 2023·Granted Apr 15, 2025·6 cites·1 claims
- 4881US10720510B2Lateral transistors and methods with low-voltage-drop shunt to body diodeMAXPOWER SEMICONDUCTOR INC·Filed 2018·Granted Jul 21, 2020·1 cites·10 claims
- 4981US10128353B2Trench transistors and methods with low-voltage-drop shunt to body diodeMAXPOWER SEMICONDUCTOR INC·Filed 2017·Granted Nov 13, 2018·1 cites·12 claims
- 5081US6104062ASemiconductor device having reduced effective substrate resistivity and associated methodsINTERSIL CORP·Filed 1998·Granted Aug 15, 2000·54 cites·49 claims
Showing the top 50 of 179 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →