Inventor · disambiguated record
Jyh-Huei Chen
Also filed as: CHEN JYH-HUEI
52 granted patents·15 pending applications·133 citations·filing 2001–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD52TAIWAN SEMICONDUCTOR MFG8KO CHUN-HUNG3HUANG CHUN HUNG2CHEN JYH-HUEI1
Top patents by PatentIndex Score
67 records- 0196US11424188B2Methods of fabricating integrated circuit devices having raised via contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 23, 2022·3 cites·20 claims
- 0296US10153351B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 11, 2018·14 cites·19 claims
- 0395US10109507B2Fluorine contamination control in semiconductor manufacturing processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 23, 2018·13 cites·20 claims
- 0493US11069784B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 20, 2021·7 cites·20 claims
- 0593US10825721B2Insulating cap on contact structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 3, 2020·9 cites·20 claims
- 0692US11784218B2Gate air spacer protection during source/drain via hole etchingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 10, 2023·2 cites·20 claims
- 0790US12040225B2Insulating cap on contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·1 cites·20 claims
- 0890US10840189B2Integrated circuit devices having raised via contacts and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 17, 2020·4 cites·20 claims
- 0989US11626495B2Protective liner for source/drain contact to prevent electrical bridging while minimizing resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 11, 2023·2 cites·20 claims
- 1088US2025366145A1Semiconductor devices having silicide layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1187US10950497B2Electrical connection for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 16, 2021·3 cites·20 claims
- 1286US8569141B2Polysilicon resistor formation in a gate-last processHUANG CHUN-HUNG·Filed 2011·Granted Oct 29, 2013·10 cites·20 claims
- 1383US10868184B2Fin field effect transistor (FinFET) device structure with hard mask layer over gate structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·3 cites·20 claims
- 1482US8658483B2Method of fabricating an integrated circuit device having backside bevel protectionTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Feb 25, 2014·6 cites·20 claims
- 1581US11018057B2Semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 25, 2021·1 cites·20 claims
- 1681US10714586B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 14, 2020·2 cites·16 claims
- 1781US2024339356A1Insulating cap on contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1880US12148797B2Gate air spacer protection during source/drain via hole etchingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 19, 2024·0 cites·20 claims
- 1980US2024379806A1Semiconductor devices having silicide layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2079US12477807B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 18, 2025·0 cites·20 claims
- 2179US11955380B2Conductive element for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 9, 2024·0 cites·20 claims
- 2279US2024387665A1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2378US6444566B1Method of making borderless contact having a sion buffer layerTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Sep 3, 2002·22 cites·6 claims
- 2478US2024379747A1Gate air spacer protection during source/drain via hole etchingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2577US8338242B2Backside bevel protectionHSU JUNG-TZU·Filed 2011·Granted Dec 25, 2012·6 cites·20 claims
- 2677US2024371998A1Contact structure with insulating cap and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2776US12243826B2Method for manufacturing semiconductor structure having raised via contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 4, 2025·0 cites·20 claims
- 2876US9449971B2Methods of forming FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 20, 2016·4 cites·20 claims
- 2976US2025157938A1Semiconductor structure having raised via contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3075US11139203B2Using mask layers to facilitate the formation of self-aligned contacts and viasTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 5, 2021·2 cites·20 claims
- 3175US8735258B2Integrated circuit resistor fabrication with dummy gate removalKO CHUN-HUNG·Filed 2012·Granted May 27, 2014·4 cites·18 claims
- 3275US2025364239A1Structure and Formation Method of Semiconductor Device with Backside Conductive ContactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3375US2024379785A1Protective Liner for Source/Drain Contact to Prevent Electrical Bridging While Minimizing ResistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3474US12317570B2Protective liner for source/drain contact to prevent electrical bridging while minimizing resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 27, 2025·0 cites·20 claims
- 3574US2024339513A1Contact and via structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3673US9082789B2Fabrication methods of integrated semiconductor structureHUANG CHUN-HUNG·Filed 2011·Granted Jul 14, 2015·4 cites·20 claims
- 3772US12154957B2Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 26, 2024·0 cites·20 claims
- 3872US11837663B2Via structure with low resistivity and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 5, 2023·0 cites·20 claims
- 3972US11508616B2Electrical connection for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 22, 2022·0 cites·20 claims
- 4071US11393717B2Insulating cap on contact structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 19, 2022·0 cites·20 claims
- 4171US10950729B2Contact structure with insulating capTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 16, 2021·1 cites·20 claims
- 4271US10658237B2Semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 19, 2020·1 cites·20 claims
- 4370US12154856B2Methods of manufacturing via structures on source/drain contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 26, 2024·0 cites·20 claims
- 4469US12074218B2Contact structure with insulating capTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 27, 2024·0 cites·20 claims
- 4569US11569362B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 31, 2023·0 cites·20 claims
- 4669US11081585B2Via structure with low resistivity and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 3, 2021·0 cites·20 claims
- 4768US12046646B2Contact and via structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 23, 2024·0 cites·20 claims
- 4867US2023147413A1Via StructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4966US2025149324A1Structure and Formation Method of Semiconductor Device with Backside Conductive ContactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 5064US8877614B2Spacer for semiconductor structure contactKO CHUN-HUNG·Filed 2011·Granted Nov 4, 2014·2 cites·20 claims
Showing the top 50 of 67 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →