Inventor · disambiguated record
Jyun-Hao Lin
Also filed as: LIN JYUN-HAO
2 granted patents·3 citations·filing 2018–2020
43Inventor score
Technology areasH10P
Files withTAIWAN SEMICONDUCTOR MFG CO LTD2
Top patents by PatentIndex Score
2 records- 0183US10763363B2Gradient doped region of recessed fin forming a FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 1, 2020·3 cites·20 claims
- 0264US11133415B2Gradient doped region of recessed Fin forming a FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 28, 2021·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →