Inventor · disambiguated record
Jyun-Ying Lin
Also filed as: LIN JYUN-YING
15 granted patents·6 pending applications·95 citations·filing 2011–2025
90Inventor score
Top patents by PatentIndex Score
21 records- 0196US10276651B2Low warpage high density trench capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·15 cites·20 claims
- 0296US9978829B2Low impedance high density deep trench capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 22, 2018·22 cites·20 claims
- 0396US9178080B2Deep trench structure for high density capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2012·Granted Nov 3, 2015·49 cites·20 claims
- 0493US11063157B1Trench capacitor profile to decrease substrate warpageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 13, 2021·6 cites·20 claims
- 0588US11769792B2Trench capacitor profile to decrease substrate warpageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 26, 2023·1 cites·20 claims
- 0684US2025063744A1Trench capacitor profile to decrease substrate warpageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0783US12176387B2Trench capacitor profile to decrease substrate warpageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 24, 2024·0 cites·20 claims
- 0883US2025240981A1Low warpage high density trench capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0982US12272725B2Low warpage high density trench capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 8, 2025·0 cites·20 claims
- 1076US2025359009A1Deep trench capacitor and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1174US2025113496A1Trench capacitor film scheme to reduce substrate warpageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1272US11688762B2Low warpage high density trench capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 27, 2023·0 cites·20 claims
- 1368US12199139B2Trench capacitor film scheme to reduce substrate warpageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 14, 2025·0 cites·20 claims
- 1467US10693019B2Film scheme for a high density trench capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 23, 2020·1 cites·20 claims
- 1565US12439582B2Deep trench capacitor and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 7, 2025·0 cites·20 claims
- 1662US10868110B2Low warpage high density trench capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·0 cites·20 claims
- 1759US2025351387A1Deep trench capacitor and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1856US8653623B2One-time programmable devices and methods of forming the sameLIN JYUN-YING·Filed 2011·Granted Feb 18, 2014·1 cites·20 claims
- 1956US2025063743A1In-trench capacitor merged structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2053US8853079B2Fuse deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Oct 7, 2014·0 cites·10 claims
- 2147US8962439B2Memory cellTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 24, 2015·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →