Inventor · disambiguated record
Jyh-Feng Lin
Also filed as: LIN JYH-FENG
10 granted patents·202 citations·filing 1994–2002
91Inventor score
Top patents by PatentIndex Score
10 records- 0177US5481122ASurface light emitting diode with electrically conductive window layerIND TECH RES INST·Filed 1994·Granted Jan 2, 1996·35 cites·18 claims
- 0268US6613592B1IMD oxide crack monitor pattern and design ruleTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Sep 2, 2003·13 cites·30 claims
- 0367US5956566AMethod and test site to monitor alignment shift and buried contact trench formationTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Sep 21, 1999·36 cites·19 claims
- 0466US6040223AMethod for making improved polysilicon FET gate electrodes having composite sidewall spacers using a trapezoidal-shaped insulating layer for more reliable integrated circuitsTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Mar 21, 2000·41 cites·20 claims
- 0560US5915178AMethod for improving the endurance of split gate flash EEPROM devices via the addition of a shallow source side implanted regionTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Jun 22, 1999·26 cites·27 claims
- 0659USRE35665ESurface light emitting diode with electrically conductive window layerIND TECH RES INST·Filed 1996·Granted Nov 18, 1997·22 cites·18 claims
- 0752US5917215AStepped edge structure of an EEPROM tunneling windowTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jun 29, 1999·13 cites·3 claims
- 0851US5895240AMethod of making stepped edge structure of an EEPROM tunneling windowTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Apr 20, 1999·13 cites·15 claims
- 0945US6369428B2Polysilicon load for 4T SRAM operating at cold temperaturesTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Apr 9, 2002·3 cites·4 claims
- 1026US6238993B1Polysilicon load for 4T SRAM operation at cold temperaturesTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted May 29, 2001·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →