Inventor · disambiguated record
Jyu-Horng Shieh
Also filed as: SHIEH JYU-HORNG
125 granted patents·20 pending applications·738 citations·filing 2000–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD104TAIWAN SEMICONDUCTOR MFG35LEE CHIA-YING2SU YI-NIEN2HUANG YI-CHUN1
Top patents by PatentIndex Score
145 records- 0199US9153478B2Spacer etching process for integrated circuit designTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 6, 2015·118 cites·20 claims
- 0298US12219879B2Gradient protection layer in MTJ manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·2 cites·20 claims
- 0398US11411176B2Gradient protection layer in MTJ manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 9, 2022·3 cites·20 claims
- 0498US10276794B1Memory device and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·18 cites·20 claims
- 0598US8987142B2Multi-patterning method and device formed by the methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Mar 24, 2015·119 cites·19 claims
- 0697US11676821B2Self-aligned double patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 13, 2023·4 cites·20 claims
- 0797US9711372B2Double patterning methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 18, 2017·12 cites·20 claims
- 0897US9123656B1Organosilicate polymer mandrel for self-aligned double patterning processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 1, 2015·45 cites·20 claims
- 0996US12127489B2Integrated circuit structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 22, 2024·1 cites·20 claims
- 1096US10862023B2Semiconductor structure and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·7 cites·20 claims
- 1196US9966309B2Contact plug without seam hole and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 8, 2018·10 cites·20 claims
- 1295US9991200B2Air gap structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jun 5, 2018·18 cites·20 claims
- 1394US10714383B2Interconnect structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 14, 2020·6 cites·20 claims
- 1494US8669180B1Semiconductor device with self aligned end-to-end conductive line structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Mar 11, 2014·15 cites·20 claims
- 1594US8633108B1Dual damascene processTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jan 21, 2014·13 cites·20 claims
- 1693US11683991B2Semiconductor structure and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 20, 2023·2 cites·20 claims
- 1793US2025133967A1Gradient protection layer in mtj manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1892US10651047B2Double patterning methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 12, 2020·4 cites·20 claims
- 1992US7968506B2Wet cleaning stripping of etch residue after trench and via opening formation in dual damascene processTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Jun 28, 2011·20 cites·3 claims
- 2091US11101429B2Metal etching stop layer in magnetic tunnel junction memory cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 24, 2021·5 cites·20 claims
- 2191US9240346B2Double patterning methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jan 19, 2016·6 cites·20 claims
- 2290US10867840B2Method of forming a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·5 cites·20 claims
- 2390US10651373B2Memory device and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 12, 2020·4 cites·20 claims
- 2490US10510553B1Dry ashing by secondary excitationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·5 cites·20 claims
- 2590US10109497B2Double patterning methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 23, 2018·3 cites·20 claims
- 2688US9892960B2Interconnect structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 13, 2018·4 cites·20 claims
- 2788US9153479B2Method of preventing a pattern collapseTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 6, 2015·7 cites·21 claims
- 2887US6790770B2Method for preventing photoresist poisoningTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Sep 14, 2004·46 cites·20 claims
- 2986US12317751B2Integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 27, 2025·0 cites·20 claims
- 3086US9401329B2Interconnect structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jul 26, 2016·5 cites·19 claims
- 3186US8962432B2Semiconductor device with self aligned end-to-end conductive line structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 24, 2015·5 cites·20 claims
- 3286US8828885B2Photo resist trimmed line end spaceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 9, 2014·5 cites·20 claims
- 3386US7256498B2Resistance-reduced semiconductor device and methods for fabricating the sameTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Aug 14, 2007·14 cites·8 claims
- 3485US11456210B2Integrated circuit and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 27, 2022·1 cites·20 claims
- 3585US2025255190A1Integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3684US11944017B2Semiconductor structure and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 26, 2024·0 cites·20 claims
- 3784US11923202B2Double patterning methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 5, 2024·0 cites·20 claims
- 3884US11710657B2Middle-of-line interconnect structure having air gap and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 25, 2023·1 cites·20 claims
- 3984US10868239B2Gradient protection layer in MTJ manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·2 cites·20 claims
- 4084US9502287B2Method of preventing pattern collapseTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 22, 2016·3 cites·20 claims
- 4184US9472448B2Contact plug without seam hole and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 18, 2016·4 cites·20 claims
- 4283US10290538B2Interconnect structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 14, 2019·2 cites·20 claims
- 4383US8841214B2Dual damascene processTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Sep 23, 2014·4 cites·20 claims
- 4482US12237214B2Method of forming a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 25, 2025·0 cites·20 claims
- 4582US9502261B2Spacer etching process for integrated circuit designTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 22, 2016·2 cites·20 claims
- 4682US7074727B2Process for improving dielectric properties in low-k organosilicate dielectric materialTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jul 11, 2006·17 cites·14 claims
- 4782US7015133B2Dual damascene structure formed of low-k dielectric materialsTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Mar 21, 2006·31 cites·20 claims
- 4881US12217936B2DC bias in plasma processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·19 claims
- 4981US11856865B2Gradient protection layer in MTJ manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 5081US9929094B2Semiconductor device having air gap structures and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Mar 27, 2018·2 cites·20 claims
Showing the top 50 of 145 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →