Inventor · disambiguated record
Kamel Benaissa
Also filed as: BENAISSA KAMEL
21 granted patents·6 pending applications·99 citations·filing 2001–2017
93Inventor score
Top patents by PatentIndex Score
27 records- 0187US8753941B1High performance asymmetric cascoded transistorTEXAS INSTRUMENTS INC·Filed 2013·Granted Jun 17, 2014·12 cites·31 claims
- 0286US8232158B2Compensated isolated p-well DENMOS devicesBENAISSA KAMEL·Filed 2010·Granted Jul 31, 2012·9 cites·9 claims
- 0385US7053465B2Semiconductor varactor with reduced parasitic resistanceTEXAS INSTRUMENTS INC·Filed 2001·Granted May 30, 2006·30 cites·7 claims
- 0482US8134204B2DEMOS transistors with STI and compensated well in drainBENAISSA KAMEL·Filed 2009·Granted Mar 13, 2012·10 cites·12 claims
- 0578US10128145B2Diffusion resistor with reduced voltage coefficient of resistance and increased breakdown voltage using CMOS wellsTEXAS INSTRUMENTS INC·Filed 2014·Granted Nov 13, 2018·4 cites·17 claims
- 0675US6847095B2Variable reactor (varactor) with engineered capacitance-voltage characteristicsTEXAS INSTRUMENTS INC·Filed 2003·Granted Jan 25, 2005·21 cites·24 claims
- 0773US8716827B2Diffusion resistor with reduced voltage coefficient of resistance and increased breakdown voltage using CMOS wellsBENAISSA KAMEL·Filed 2012·Granted May 6, 2014·3 cites·10 claims
- 0870US8405154B2Low cost transistors using gate orientation and optimized implantsBENAISSA KAMEL·Filed 2011·Granted Mar 26, 2013·2 cites·3 claims
- 0968US8940612B2Poly resistor for metal gate integrated circuitsTEXAS INSTRUMENTS INC·Filed 2013·Granted Jan 27, 2015·2 cites·12 claims
- 1067US7994009B2Low cost transistors using gate orientation and optimized implantsBENAISSA KAMEL·Filed 2009·Granted Aug 9, 2011·2 cites·17 claims
- 1161US9543374B2Low temperature coefficient resistor in CMOS flowTEXAS INSTRUMENTS INC·Filed 2014·Granted Jan 10, 2017·1 cites·9 claims
- 1253US9508708B2Poly resistor for metal gate integrated circuitsTEXAS INSTRUMENTS INC·Filed 2014·Granted Nov 29, 2016·0 cites·7 claims
- 1353US8940598B2Low temperature coefficient resistor in CMOS flowBALDWIN GREG CHARLES·Filed 2011·Granted Jan 27, 2015·1 cites·11 claims
- 1452US9966373B2MOS transistor structure and method of forming the structure with vertically and horizontally-elongated metal contactsTEXAS INSTRUMENTS INC·Filed 2017·Granted May 8, 2018·0 cites·17 claims
- 1551US2009263946A1Device Having Pocketless Regions and Methods of Making the DeviceTEXAS INSTRUMENTS INC·Filed 2009·Application pending·0 cites
- 1648US9583609B2MOS transistor structure and method of forming the structure with vertically and horizontally-elongated metal contactsTEXAS INSTRUMENTS INC·Filed 2013·Granted Feb 28, 2017·0 cites·17 claims
- 1748US8604543B2Compensated isolated p-well DENMOS devicesBENAISSA KAMEL·Filed 2012·Granted Dec 10, 2013·0 cites·7 claims
- 1848US7829405B2Lateral bipolar transistor with compensated well regionsTEXAS INSTRUMENTS INC·Filed 2007·Granted Nov 9, 2010·0 cites·13 claims
- 1948US2010327361A1Low cost symmetric transistorsBENAISSA KAMEL·Filed 2009·Application pending·0 cites
- 2046US2008179691A1Device Having Pocketless Regions and Method of Making the DeviceBENAISSA KAMEL·Filed 2007·Application pending·0 cites
- 2146US2006192268A1Semiconductor varactor with reduced parasitic resistanceBENAISSA KAMEL·Filed 2006·Application pending·0 cites
- 2245US2010244138A1Semiconductor varactor with reduced parasitic resistanceTEXAS INSTRUMENTS INC·Filed 2010·Application pending·0 cites
- 2344US8294243B2Lateral bipolar transistor with compensated well regionsBENAISSA KAMEL·Filed 2010·Granted Oct 23, 2012·0 cites·13 claims
- 2443US6548337B2Method of manufacturing a high gain bipolar junction transistor with counterdoped base in CMOS technologyTEXAS INSTRUMENTS INC·Filed 2001·Granted Apr 15, 2003·2 cites·14 claims
- 2538US8609483B2Method of building compensated isolated P-well devicesBENAISSA KAMEL·Filed 2010·Granted Dec 17, 2013·0 cites·12 claims
- 2636US8114729B2Differential poly doping and circuits therefromEKBOTE SHASHANK·Filed 2007·Granted Feb 14, 2012·0 cites·10 claims
- 2733US2002084494A1Method for making high gain bipolar transistors in CMOS processFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →