Inventor · disambiguated record
Katsunori Danno
Also filed as: DANNO KATSUNORI
20 granted patents·2 pending applications·11 citations·filing 2009–2022
89Inventor score
Top patents by PatentIndex Score
22 records- 0190US11152225B1Method for producing semiconductor elementTOYOTA MOTOR CO LTD·Filed 2021·Granted Oct 19, 2021·3 cites·10 claims
- 0287US9777399B2Method for producing SiC single crystalTOYOTA MOTOR CO LTD·Filed 2015·Granted Oct 3, 2017·2 cites·6 claims
- 0380US9732436B2SiC single-crystal ingot, SiC single crystal, and production method for sameSHIRAI TAKAYUKI·Filed 2013·Granted Aug 15, 2017·2 cites·6 claims
- 0479US10087549B2Method for producing sic single crystal having low defects by solution processTOYOTA MOTOR CO LTD·Filed 2014·Granted Oct 2, 2018·1 cites·6 claims
- 0576US9512540B2Method for manufacturing N-type SiC single crystal by solution growth using a mixed gas atmosphereKUSUNOKI KAZUHIKO·Filed 2011·Granted Dec 6, 2016·1 cites·6 claims
- 0667US9508802B2Gettering process for producing semiconductor deviceDANNO KATSUNORI·Filed 2012·Granted Nov 29, 2016·2 cites·6 claims
- 0764US9951441B2Method for producing SiC substrateTOYOTA MOTOR CO LTD·Filed 2014·Granted Apr 24, 2018·0 cites·7 claims
- 0863US12505940B2Rare earth magnet and manufacturing method thereforTOYOTA MOTOR CO LTD·Filed 2021·Granted Dec 23, 2025·0 cites·7 claims
- 0959US12426318B2Semiconductor device and method of manufacturing semiconductor deviceTOYOTA MOTOR CO LTD·Filed 2022·Granted Sep 23, 2025·0 cites·14 claims
- 1058US9982365B2Method for producing SiC single crystalTOYOTA MOTOR CO LTD·Filed 2014·Granted May 29, 2018·0 cites·8 claims
- 1155US10428440B2SiC single crystal and production method thereofTOYOTA MOTOR CO LTD·Filed 2013·Granted Oct 1, 2019·0 cites·1 claims
- 1255US10119199B2Method for producing SiC single crystalTOYOTA MOTOR CO LTD·Filed 2016·Granted Nov 6, 2018·0 cites·12 claims
- 1353US10094044B2SiC single crystal and method for producing sameTOYOTA MOTOR CO LTD·Filed 2016·Granted Oct 9, 2018·0 cites·8 claims
- 1451US12349422B2Semiconductor deviceTOYOTA MOTOR CO LTD·Filed 2022·Granted Jul 1, 2025·0 cites·6 claims
- 1550US10260167B2Method for producing silicon carbide single crystal in a solution process using a seed crystal having a bottom face with a circular shape and at least a partially removed sectionTOYOTA MOTOR CO LTD·Filed 2017·Granted Apr 16, 2019·0 cites·5 claims
- 1649US2013042802A1Method of production of sic single crystalDANNO KATSUNORI·Filed 2009·Application pending·0 cites
- 1748US9587327B2Method of production of sic single crystalDANNO KATSUNORI·Filed 2009·Granted Mar 7, 2017·0 cites·8 claims
- 1846US10546933B2Switching element and method of manufacturing the sameTOYOTA MOTOR CO LTD·Filed 2018·Granted Jan 28, 2020·0 cites·10 claims
- 1945US10094041B2SiC single crystal and method of producing sameDANNO KATSUNORI·Filed 2011·Granted Oct 9, 2018·0 cites·4 claims
- 2042US9190482B2Method of production of SiC semiconductor deviceDANNO KATSUNORI·Filed 2012·Granted Nov 17, 2015·0 cites·3 claims
- 2141US10145025B2Method for producing SiC single crystalTOYOTA MOTOR CO LTD·Filed 2016·Granted Dec 4, 2018·0 cites·4 claims
- 2238US2016090664A1Method for producing sic single crystalTOYOTA MOTOR CO LTD·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →