Inventor · disambiguated record
Kathleen Marie Doverspike
Also filed as: DOVERSPIKE KATHLEEN · DOVERSPIKE KATHLEEN M · DOVERSPIKE KATHLEEN MARIE
30 granted patents·2,362 citations·filing 1992–2015
98Inventor score
Top patents by PatentIndex Score
30 records- 0198US6958497B2Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structuresCREE INC·Filed 2002·Granted Oct 25, 2005·290 cites·52 claims
- 0298US6201262B1Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structureCREE INC·Filed 1997·Granted Mar 13, 2001·604 cites·16 claims
- 0398US6187606B1Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structureCREE INC·Filed 1999·Granted Feb 13, 2001·484 cites·10 claims
- 0497US7312474B2Group III nitride based superlattice structuresCREE INC·Filed 2004·Granted Dec 25, 2007·153 cites·21 claims
- 0596US6906352B2Group III nitride LED with undoped cladding layer and multiple quantum wellCREE INC·Filed 2002·Granted Jun 14, 2005·168 cites·39 claims
- 0695US6459100B1Vertical geometry ingan LEDCREE INC·Filed 1998·Granted Oct 1, 2002·201 cites·9 claims
- 0793US6373077B1Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structureCREE INC·Filed 2000·Granted Apr 16, 2002·53 cites·18 claims
- 0891US6800876B2Group III nitride LED with undoped cladding layer (5000.137)CREE INC·Filed 2001·Granted Oct 5, 2004·65 cites·19 claims
- 0991US6610551B1Vertical geometry InGaN LEDCREE INC·Filed 2000·Granted Aug 26, 2003·68 cites·6 claims
- 1090US7692209B2Group III nitride LED with undoped cladding layerCREE INC·Filed 2006·Granted Apr 6, 2010·12 cites·29 claims
- 1188US7170097B2Inverted light emitting diode on conductive substrateCREE INC·Filed 2003·Granted Jan 30, 2007·50 cites·35 claims
- 1288US6534797B1Group III nitride light emitting devices with gallium-free layersCREE INC·Filed 2000·Granted Mar 18, 2003·50 cites·29 claims
- 1386US8227268B2Methods of fabricating group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structuresEMERSON DAVID TODD·Filed 2007·Granted Jul 24, 2012·7 cites·31 claims
- 1483US9112083B2Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structuresEMERSON DAVID TODD·Filed 2012·Granted Aug 18, 2015·3 cites·21 claims
- 1583USRE42007EVertical geometry InGaN LEDCREE INC·Filed 2008·Granted Dec 28, 2010·6 cites·31 claims
- 1682US6717185B2Light emitting devices with Group III nitride contact layer and superlatticeCREE INC·Filed 2003·Granted Apr 6, 2004·30 cites·25 claims
- 1781US7531840B2Light emitting diode with metal coupling structureCREE INC·Filed 2007·Granted May 12, 2009·6 cites·28 claims
- 1881US6630690B2Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structureCREE INC·Filed 2001·Granted Oct 7, 2003·17 cites·14 claims
- 1980US7034328B2Vertical geometry InGaN LEDCREE INC·Filed 2002·Granted Apr 25, 2006·24 cites·6 claims
- 2076US6987281B2Group III nitride contact structures for light emitting devicesCREE INC·Filed 2003·Granted Jan 17, 2006·21 cites·13 claims
- 2170US7071490B2Group III nitride LED with silicon carbide substrateCREE INC·Filed 2004·Granted Jul 4, 2006·12 cites·11 claims
- 2269USRE45517EVertical geometry InGaN LEDDOVERSPIKE KATHLEEN MARIE·Filed 2010·Granted May 19, 2015·1 cites·23 claims
- 2369US6952024B2Group III nitride LED with silicon carbide cladding layerCREE INC·Filed 2003·Granted Oct 4, 2005·17 cites·17 claims
- 2468US7482183B2Light emitting diode with degenerate coupling structureCREE INC·Filed 2007·Granted Jan 27, 2009·2 cites·34 claims
- 2567US6492193B1Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structureCREE INC·Filed 2000·Granted Dec 10, 2002·7 cites·12 claims
- 2665USRE46589EGroup III nitride LED with undoped cladding layer and multiple quantum wellCREE INC·Filed 2015·Granted Oct 24, 2017·1 cites·45 claims
- 2761USRE45059EGroup III nitride LED with undoped cladding layerEDMOND JOHN ADAM·Filed 2012·Granted Aug 5, 2014·0 cites·44 claims
- 2859USRE46588EGroup III nitride LED with undoped cladding layerCREE INC·Filed 2015·Granted Oct 24, 2017·0 cites·48 claims
- 2953US6784461B2Group III nitride light emitting devices with progressively graded layersCREE INC·Filed 2003·Granted Aug 31, 2004·3 cites·20 claims
- 3045US5665430AChemical vapor deposition method for depositing diamond using a high temperature vacuum substrate mountUS ARMY·Filed 1992·Granted Sep 9, 1997·7 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →