Inventor · disambiguated record
Karl-Ernst Ehwald
Also filed as: EHWALD KARL-ERNST · SCHEERER JOACHIM DR RER NAT
16 granted patents·192 citations·filing 1994–2010
93Inventor score
Top patents by PatentIndex Score
16 records- 0188US6477891B2Process for affinity viscosimetry and viscosimetric affinity sensorDISETRONIC LICENSING AG·Filed 2001·Granted Nov 12, 2002·36 cites·8 claims
- 0281US8035167B2Complementary bipolar semiconductor deviceIHP GMBH & MDASH INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS LEIBNIZ INST FUR INNOVATIV MIKROE·Filed 2007·Granted Oct 11, 2011·13 cites·9 claims
- 0378US6267002B1Process for affinity viscosimetry and viscosimetric affinity sensorDISETRONIC LICENSING AG·Filed 1999·Granted Jul 31, 2001·44 cites·17 claims
- 0471US7304348B2DMOS transistorIHP GMBH·Filed 2002·Granted Dec 4, 2007·18 cites·13 claims
- 0567US5786609AIntegrated horizontal unipolar transistor having a doped layer forming an internal gate of the transistor and at least one integrated capacitor having a first electrode connected to a source of the transistor and a second electrode to the fixed potentialMAX PLANCK GESELLSCHAFT·Filed 1994·Granted Jul 28, 1998·30 cites·15 claims
- 0652US7307336B2BiCMOS structure, method for producing the same and bipolar transistor for a BiCMOS structureIHP GMBH·Filed 2002·Granted Dec 11, 2007·7 cites·7 claims
- 0751US6627972B1Vertical bipolar transistorINST HALBLEITERPHYSIK GMBH·Filed 1999·Granted Sep 30, 2003·14 cites·5 claims
- 0848US6878995B2Cmos-compatible lateral dmos transistor and method for producing such a transistorIHP GMBH·Filed 2001·Granted Apr 12, 2005·4 cites·8 claims
- 0946US7323390B2Semiconductor device and method for production thereofIHP GMBH·Filed 2002·Granted Jan 29, 2008·3 cites·57 claims
- 1042US7284413B2Method and apparatus for measuring viscosityEHWALD RUDOLF·Filed 2001·Granted Oct 23, 2007·3 cites·30 claims
- 1140US6740560B1Bipolar transistor and method for producing sameINST HALBLEITERPHYSIK GMBH·Filed 1999·Granted May 25, 2004·7 cites·11 claims
- 1234US5571731AProcedure for the manufacture of bipolar transistors without epitaxy and with fully implanted base and collector regions which are self-positioning relative to each otherPREMA PAEZISIONSELEKTRONIK GMBH·Filed 1994·Granted Nov 5, 1996·10 cites·18 claims
- 1333US7595534B2Layers in substrate wafersIHP GMBH·Filed 2001·Granted Sep 29, 2009·0 cites·10 claims
- 1432US8330237B2Corrosion-resistant MEMS component and method for the production thereofDREWS JUERGEN·Filed 2008·Granted Dec 11, 2012·0 cites·11 claims
- 1525US9048052B2Electromechanical microswitch for switching an electrical signal, microelectromechanical system, integrated circuit, and method for producing an integrated circuitKAYNAK MEHMET·Filed 2010·Granted Jun 2, 2015·0 cites·22 claims
- 1625US6465318B1Bipolar transistor and method for producing sameINST HALBLEITERPHYSIK FRANFURT·Filed 1999·Granted Oct 15, 2002·3 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →