Inventor · disambiguated record
Katsumi Eikyu
Also filed as: EIKYU KATSUMI
21 granted patents·20 pending applications·258 citations·filing 1995–2025
93Inventor score
Top patents by PatentIndex Score
41 records- 0194US6950369B2Magnetic memory device capable of passing bidirectional currents through the bit linesMITSUBISHI ELECTRIC CORP·Filed 2004·Granted Sep 27, 2005·71 cites·4 claims
- 0294US6567299B2Magnetic memory device and magnetic substrateMITSUBISHI ELECTRIC CORP·Filed 2001·Granted May 20, 2003·83 cites·4 claims
- 0389US6741495B2Magnetic memory device and magnetic substrateMITSUBISHI ELECTRIC CORP·Filed 2003·Granted May 25, 2004·41 cites·2 claims
- 0479US9755094B2Imaging deviceRENESAS ELECTRONICS CORP·Filed 2015·Granted Sep 5, 2017·3 cites·15 claims
- 0579US2024290881A1Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 0679US2025015138A1Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 0777US2024204098A1Semiconductor device having semiconductor regions in epitaxial drift layerRENESAS ELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 0876US11362207B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2020·Granted Jun 14, 2022·1 cites·17 claims
- 0976US10121894B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2017·Granted Nov 6, 2018·2 cites·15 claims
- 1074US2023369414A1Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2023·Application pending·0 cites
- 1173US2025015175A1Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 1273US2023077367A1Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2022·Application pending·0 cites
- 1368US6876208B2Semiconductor device and method of checking semiconductor storage deviceRENESAS TECH CORP·Filed 2002·Granted Apr 5, 2005·13 cites·12 claims
- 1464US2021217888A1Semiconductor device having a transistorRENESAS ELECTRONICS CORP·Filed 2021·Application pending·0 cites
- 1563US2025212454A1Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 1663US2021074816A1Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2020·Application pending·0 cites
- 1762US2025203921A1Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 1861US11876127B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2021·Granted Jan 16, 2024·0 cites·20 claims
- 1960US9437644B2Semiconductor device and method of manufacturing sameRENESAS ELECTRONICS CORP·Filed 2014·Granted Sep 6, 2016·0 cites·20 claims
- 2058US12125905B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2020·Granted Oct 22, 2024·0 cites·5 claims
- 2158US2019198663A1Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2018·Application pending·0 cites
- 2258US2019237577A1Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2018·Application pending·0 cites
- 2356US11646376B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2021·Granted May 9, 2023·0 cites·12 claims
- 2456US6894520B2Semiconductor device and capacitance measurement methodRENESAS TECH CORP·Filed 2003·Granted May 17, 2005·8 cites·11 claims
- 2555US6576965B2Semiconductor device with lightly doped drain layerMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Jun 10, 2003·21 cites·5 claims
- 2654US2024178277A1Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2023·Application pending·0 cites
- 2754US2024387648A1Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 2852US12159934B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2022·Granted Dec 3, 2024·0 cites·5 claims
- 2952US11557648B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2020·Granted Jan 17, 2023·0 cites·9 claims
- 3051US2025359201A1Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 3150US12402368B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2022·Granted Aug 26, 2025·0 cites·12 claims
- 3250US11527632B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2021·Granted Dec 13, 2022·0 cites·16 claims
- 3350US6461946B2Method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Oct 8, 2002·3 cites·12 claims
- 3446US2008113480A1Method of manufacturing semiconductor deviceRENESAS TECH CORP·Filed 2007·Application pending·0 cites
- 3545US10861786B2Semiconductor device having a multilayer structureRENESAS ELECTRONICS CORP·Filed 2019·Granted Dec 8, 2020·0 cites·13 claims
- 3641US2003220770A1Design rule generating systemMITSUBISHI ELECTRIC CORP·Filed 2002·Application pending·0 cites
- 3740US5845105AMethod of simulating semiconductor manufacture with process functions according to user applicationMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Dec 1, 1998·12 cites·22 claims
- 3840US2007138574A1Semiconductor device and manufacturing method thereforRENESAS TECH CORP·Filed 2006·Application pending·0 cites
- 3938US2004207024A1Semiconductor device with an STI structure which is capable of suppressing inverse narrow channel effect, and method of manufacturing the sameRENESAS TECH CORP·Filed 2003·Application pending·0 cites
- 4037US10923422B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2019·Granted Feb 16, 2021·0 cites·6 claims
- 4135US2017077166A1Image sensor deviceRENESAS ELECTRONICS CORP·Filed 2016·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Katsumi Eikyu files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →